STP6NC80Z - STP6NC80ZFP STB6NC80Z-1 N-CHANNEL 800V - 1.8Ω - 5.1A TO-220/TO-220FP/I PAK Zener-Protected PowerMESH III MOSFET PRELIMINARY DATA TYPE VDSS RDS(on) ID STP6NC80Z/FP 800V < 2Ω 5.1 A STB6NC80Z-1 800V < 2Ω 5.1 A n TYPICAL RDS(on) = 1.8 Ω ■ EXTREMELY HIGH dv/dt AND CAPABILITY GATE-TO- SOURCE ZENER DIODES ■ 100% AVALANCHE TESTED ■ VERY LOW GATE INPUT RESISTANCE ■ GATE CHARGE MINIMIZED 3 2 1 TO-220 TO-220FP 1 2 3 I PAK (Tabless TO-220) DESCRIPTION The third generation of MESH OVERLAY Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-toback Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested by a large variety of single-switch applications. APPLICATIONS ■ SINGLE-ENDED SMPS IN MONITORS, COMPUTER AND INDUSTRIAL APPLICATION ■ WELDING EQUIPMENT ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value STP(B)6NC80Z(-1) VDS VDGR VGS Unit STP6NC80ZFP Drain-source Voltage (VGS = 0) 800 V Drain-gate Voltage (RGS = 20 kΩ) 800 V Gate- source Voltage ± 25 V ID Drain Current (continuos) at TC = 25°C 5.1 5.1(*) A ID Drain Current (continuos) at TC = 100°C 3.2 3.2(*) A Drain Current (pulsed) 20 20(*) A Total Dissipation at TC = 25°C 125 40 W 0.32 W/°C I DM (1) PTOT Derating Factor 1 ±50 mA Gate source ESD(HBM-C=100pF, R=15KΩ) 3 KV dv/dt Peak Diode Recovery voltage slope 3 V/ns VISO Insulation Winthstand Voltage (DC) Tstg Storage Temperature IGS VESD(G-S) Tj Gate-source Current Max. Operating Junction Temperature (•)Pulse width limited by safe operating area April 2000 -- 2000 V –65 to 150 °C 150 °C (1)ISD ≤5.1A, di/dt ≤100A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX (2).Limited only by maximum temperature allowed This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. 1/8 STP6NC80Z/FP/STP6NC80Z-1 THERMAL DATA TO-220 / I PAK TO-220FP 1 3.13 °C/W Rthj-case Thermal Resistance Junction-case Max Rthj-amb Thermal Resistance Junction-ambient Max 30 °C/W Rthc-sink Thermal Resistance Case-sink Typ 0.1 °C/W Maximum Lead Temperature For Soldering Purpose 300 °C Tl AVALANCHE CHARACTERISTICS Symbol Parameter Max Value Unit IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) 5.1 A EAS Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) 250 mJ ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol V(BR)DSS ∆BVDSS/∆TJ Parameter Test Conditions Drain-source Breakdown Voltage ID = 250 µA, VGS = 0 Breakdown Voltage Temp. Coefficient ID = 1 mA, VGS = 0 Min. Typ. Max. 800 Unit V 0.9 V/°C IDSS Zero Gate Voltage Drain Current (V GS = 0) VDS = Max Rating 1 µA VDS = Max Rating, TC = 125 °C 50 µA IGSS Gate-body Leakage Current (VDS = 0) VGS = ±20V ±10 µA Typ. Max. Unit 4 5 V 1.8 2 Ω ON (1) Symbol VGS(th) Parameter Test Conditions Gate Threshold Voltage VDS = VGS, ID = 250µA R DS(on) Static Drain-source On Resistance VGS = 10V, ID = 2.9 A ID(on) On State Drain Current VDS > ID(on) x RDS(on)max, VGS = 10V Min. 3 5.1 A DYNAMIC Symbol gfs (1) 2/8 Parameter Forward Transconductance C iss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Test Conditions VDS > ID(on) x RDS(on)max, ID = 2.9A VDS = 25V, f = 1 MHz, VGS = 0 Min. Typ. Max. Unit 8 S 1600 pF 124 pF 11 pF STP6NC80Z/FP/STP6NC80Z-1 ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON Symbol td(on) tr Parameter Turn-on Delay Time Rise Time Qg Total Gate Charge Qgs Gate-Source Charge Q gd Gate-Drain Charge Test Conditions Min. VDD = 400 V, ID = 2.9 A RG = 4.7Ω VGS = 10V (see test circuit, Figure 3) VDD = 640V, I D = 5.8A, VGS = 10V Typ. Max. Unit 27 ns 10 ns 30 nC 7 nC 13 nC SWITCHING OFF Symbol tr(Voff) Parameter Off-voltage Rise Time tf Fall Time tc Cross-over Time Test Condit ions Min. VDD = 640V, ID = 5.8 A, R G = 4.7Ω, VGS = 10V (see test circuit, Figure 5) Typ. Max. Unit TBD ns TBD ns TBD ns SOURCE DRAIN DIODE Symbol ISD Parameter Test Conditions Min. Typ. Max. Unit Source-drain Current 5.1 A ISDM (1) Source-drain Current (pulsed) 20 A VSD (2) Forward On Voltage 1.6 V trr Reverse Recovery Time Qrr Reverse Recovery Charge IRRM Reverse Recovery Current ISD = 5.1 A, VGS = 0 ISD = 5.8 A, di/dt = 100A/µs, VDD = 100V, T j = 150°C (see test circuit, Figure 5) TBD ns TBD µC TBD A GATE-SOURCE ZENER DIODE Symbol Parameter Test Conditions Min. Typ. Max. Unit Gate-Source Breakdown Voltage Igs=± 1mA (Open Drain) αT Voltage Thermal Coefficient T=25°C Note(3) 1.3 10-4/°C Rz Dynamic Resistance ID = 20 mA, VGS = 0 90 Ω BVGSO 25 V Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. 3. ∆VBV = αT (25°-T) BVGSO(25°) PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to souce. In this respect the 25V Zener voltage is appropiate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. 3/8 STP6NC80Z/FP/STP6NC80Z-1 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 4/8 STP6NC80Z/FP/STP6NC80Z-1 TO-220 MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 D1 0.107 1.27 0.050 E 0.49 0.70 0.019 F 0.61 0.88 0.024 0.027 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.203 0.106 G1 2.4 2.7 0.094 H2 10.0 10.40 0.393 L2 0.409 16.4 0.645 13.0 14.0 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.2 6.6 0.244 0.260 L9 3.5 3.93 0.137 0.154 DIA. 3.75 3.85 0.147 0.151 D1 C D A E L4 H2 G G1 F1 L2 F2 F Dia. L5 L9 L7 L6 L4 P011C 5/8 STP6NC80Z/FP/STP6NC80Z-1 TO-220FP MECHANICAL DATA mm DIM. MIN. inch MAX. MIN. A 4.4 TYP. 4.6 0.173 TYP. MAX. 0.181 B 2.5 2.7 0.098 0.106 D 2.5 2.75 0.098 0.108 E 0.45 0.7 0.017 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.7 0.045 0.067 F2 1.15 1.7 0.045 0.067 G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 0.409 L2 16 0.630 28.6 30.6 1.126 1.204 L4 9.8 10.6 0.385 0.417 L6 15.9 16.4 0.626 0.645 L7 9 9.3 0.354 0.366 Ø 3 3.2 0.118 0.126 B D A E L3 L3 L6 F F1 L7 F2 H G G1 ¯ 1 2 3 L2 6/8 L4 STP6NC80Z/FP/STP6NC80Z-1 TO-262 (I2PAK) MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. 4.4 4.6 0.173 0.181 A1 2.49 2.69 0.098 0.106 B 0.7 0.93 0.027 0.036 B2 1.14 1.7 0.044 0.067 C 0.45 0.6 0.017 0.023 C2 1.23 1.36 0.048 0.053 D 8.95 9.35 0.352 0.368 e 2.4 2.7 0.094 0.106 E 10 10.4 0.393 0.409 L 13.1 13.6 0.515 0.531 L1 3.48 3.78 0.137 0.149 L2 1.27 1.4 0.050 0.055 E e B B2 C2 A1 A C A L1 L2 D L P011P5/E 7/8 STP6NC80Z/FP/STP6NC80Z-1 Information furnished is believed to be accurate and reliable. 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