STD3NC60 STD3NC60-1 N-CHANNEL 600V - 1.8Ω - 3.2A DPAK / IPAK PowerMesh™II MOSFET TYPE STD3NC60 STD3NC60-1 ■ ■ ■ ■ ■ ■ VDSS RDS(on) ID 600V 600V < 2.2Ω < 2.2Ω 3.2A 3.2A TYPICAL RDS(on) = 1.8Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED ADD SUFFIX “T4” FOR ORDERING IN TAPE & REEL (SMD PACKAGE) DESCRIPTION The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness. 3 3 2 1 1 DPAK No Suffix IPAK (Suffix”-1”) INTERNAL SCHEMATIC DIAGRAM APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWITCHING ■ SWITH MODE POWER SUPPLIES (SMPS) ■ DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVERS ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS Value Unit Drain-source Voltage (VGS = 0) Parameter 600 V Drain-gate Voltage (RGS = 20 kΩ) 600 V V Gate- source Voltage ±30 ID Drain Current (continuos) at TC = 25°C 3.2 A ID Drain Current (continuos) at TC = 100°C 2 A 12.8 A Total Dissipation at TC = 25°C 50 W Derating Factor 0.4 W/°C Peak Diode Recovery voltage slope 3.5 V/ns –65 to 150 °C 150 °C IDM () PTOT dv/dt(1) Tstg Tj Drain Current (pulsed) Storage Temperature Max. Operating Junction Temperature (•)Pulse width limited by safe operating area (1)ISD ≤3.2A, di/dt ≤300A/µs, VDD ≤ V(BR)DSS, Tj ≤ T JMAX. August 2002 1/10 STD3NC60 - STD3NC60-1 THERMAL DATA Rthj-case Thermal Resistance Junction-case Max 2.5 °C/W Rthj-amb Thermal Resistance Junction-ambient Max 100 °C/W Maximum Lead Temperature For Soldering Purpose 275 °C Tl AVALANCHE CHARACTERISTICS Symbol Max Value Unit IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) Parameter 3.2 A EAS Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) 270 mJ ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol V(BR)DSS IDSS IGSS Parameter Test Conditions Drain-source Breakdown Voltage ID = 250 µA, VGS = 0 Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating Gate-body Leakage Current (VDS = 0) VGS = ±30V Min. Typ. Max. 600 Unit V VDS = Max Rating, TC = 125 °C 1 µA 50 µA ±100 nA ON (1) Symbol Parameter Test Conditions VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250µA RDS(on) Static Drain-source On Resistance VGS = 10V, ID = 1.5 A Min. Typ. Max. Unit 2 3 4 V 1.8 2.2 Ω Typ. Max. Unit DYNAMIC Symbol gfs (1) 2/10 Parameter Forward Transconductance Test Conditions VDS > ID(on) x RDS(on)max, ID = 2A VDS = 25V, f = 1 MHz, VGS = 0 Min. 3.7 S Ciss Input Capacitance 475 pF Coss Output Capacitance 72 pF Crss Reverse Transfer Capacitance 10 pF STD3NC60 - STD3NC60-1 ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON Symbol td(on) tr Parameter Turn-on Delay Time Rise Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge Test Conditions Min. VDD = 300V, ID = 2A RG = 4.7Ω VGS = 10V (see test circuit, Figure 3) VDD = 480V, ID = 4 A, VGS = 10V Typ. Max. Unit 14 ns 14 ns 16.5 23.1 nC 2.5 nC 9 nC SWITCHING OFF Symbol tr(Voff) Parameter Off-voltage Rise Time tf Fall Time tc Cross-over Time Test Conditions Min. VDD = 480V, ID = 4 A, RG = 4.7Ω, VGS = 10V (see test circuit, Figure 5) Typ. Max. 15 Unit ns 19 ns 24 ns SOURCE DRAIN DIODE Symbol ISD Parameter Test Conditions Min. Typ. Source-drain Current ISDM (2) Source-drain Current (pulsed) VSD (1) Forward On Voltage ISD = 3.2A, VGS = 0 trr Reverse Recovery Time Qrr Reverse Recovery Charge ISD = 4A, di/dt = 100A/µs, VDD = 100V, Tj = 150°C (see test circuit, Figure 5) IRRM Reverse Recovery Current Max. Unit 3.2 A 12.8 A 1.6 V 600 ns 2.7 µC 9 A Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. Safe Operating Area Thermal Impedance 3/10 STD3NC60 - STD3NC60-1 Output Characteristics Tranfer Characteristics Tranconductance Static Drain-Source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations 4/10 STD3NC60 - STD3NC60-1 Normalized Gate Thereshold Voltage vs Temp. Normalized On Resistance vs Temperature Source-drain Diode Forward Characteristics 5/10 STD3NC60 - STD3NC60-1 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/10 STD3NC60 - STD3NC60-1 TO-251 (IPAK) MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. 2.4 0.086 TYP. MAX. A 2.2 A1 0.9 1.1 0.035 0.043 A3 0.7 1.3 0.027 0.051 B 0.64 0.9 0.025 0.031 B2 5.2 5.4 0.204 0.212 B3 0.094 0.85 B5 0.033 0.3 0.012 B6 0.95 0.037 C 0.45 0.6 0.017 0.023 C2 0.48 0.6 0.019 0.023 D 6 6.2 0.236 0.244 E 6.4 6.6 0.252 0.260 G 4.4 4.6 0.173 0.181 H 15.9 16.3 0.626 0.641 L 9 9.4 0.354 0.370 L1 0.8 1.2 0.031 L2 0.8 0.047 1 0.031 0.039 A1 C2 A3 A C H B B3 = 1 = 2 G = = = E B2 = 3 B5 L D B6 L2 L1 0068771-E 7/10 STD3NC60 - STD3NC60-1 TO-252 (DPAK) MECHANICAL DATA mm DIM. MIN. TYP. inch MAX. MIN. TYP. MAX. A 2.20 2.40 0.087 0.094 A1 0.90 1.10 0.035 0.043 A2 0.03 0.23 0.001 0.009 B 0.64 0.90 0.025 0.035 B2 5.20 5.40 0.204 0.213 C 0.45 0.60 0.018 0.024 C2 0.48 0.60 0.019 0.024 D 6.00 6.20 0.236 0.244 E 6.40 6.60 0.252 0.260 G 4.40 4.60 0.173 0.181 H 9.35 10.10 0.368 0.398 L2 L4 V2 0.8 0.60 0 o 0.031 1.00 8 o 0.024 0 o 0.039 0o P032P_B 8/10 STD3NC60 - STD3NC60-1 DPAK FOOTPRINT TUBE SHIPMENT (no suffix)* All dimensions are in millimeters All dimensions are in millimeters TAPE AND REEL SHIPMENT (suffix ”T4”)* REEL MECHANICAL DATA DIM. mm MIN. A DIM. mm inch MIN. MAX. A0 6.8 7 0.267 0.275 B0 10.4 10.6 0.409 0.417 12.1 0.476 B1 1.6 MIN. D 1.5 1.5 E 1.65 1.85 0.065 0.073 F 7.4 7.6 0.291 0.299 B 1.5 C 12.8 D 20.2 G 16.4 N 50 2.55 2.75 0.100 0.108 3.9 4.1 0.153 0.161 P1 7.9 8.1 0.311 0.319 P2 1.9 2.1 0.075 0.082 16.3 1.574 0.618 40 0.059 13.2 0.504 0.520 0.795 18.4 0.645 0.724 1.968 22.4 0.881 BASE QTY BULK QTY 2500 2500 0.059 0.063 K0 15.7 MAX. 12.992 0.059 P0 R MIN. MAX. D1 W MAX. 330 T TAPE MECHANICAL DATA inch 0.641 * on sales type 9/10 STD3NC60 - STD3NC60-1 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. 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