STD30PF03L STD30PF03L-1 P-CHANNEL 30V - 0.025Ω - 24A DPAK/IPAK STripFET™ II POWER MOSFET PRELIMINARY DATA TYPE STD30PF03L STD30PF03L-1 ■ ■ ■ ■ ■ VDSS RDS(on) ID 30 V 30 V < 0.028Ω < 0.028Ω 24 A 24 A TYPICAL RDS(on) = 0.025Ω STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY LOW THRESHOLD DRIVE LOW GATE CHARGE EXTREMELY LOW FIGURE OF MERIT (RDS(on) * Qg) DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique “Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance and low gate charge. 3 3 2 1 1 DPAK IPAK INTERNAL SCHEMATIC DIAGRAM APPLICATIONS DC-DC CONVERTERS ■ ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR Parameter Value Unit Drain-source Voltage (VGS = 0) 30 V Drain-gate Voltage (RGS = 20 kΩ) 30 V ± 16 V VGS Gate- source Voltage ID (#) Drain Current (continuous) at TC = 25°C 24 A ID (#) Drain Current (continuous) at TC = 100°C 24 A IDM (l) Drain Current (pulsed) 96 A Total Dissipation at TC = 25°C 70 W 0.47 W/°C PTOT Derating Factor Tstg Tj Storage Temperature Max. Operating Junction Temperature (●) Pulse width limited by safe operating area (#) Current limited by wire bonding May 2002 – 55 to 175 °C 175 °C Note:For the P-CHANNEL MOSFET actual polarity of voltages and current has to be reversed 1/8 STD30PF03L - STD30PF03L-1 THERMAL DATA Rthj-case Thermal Resistance Junction-case Max 2.14 °C/W Rthj-amb Thermal Resistance Junction-ambient Max 100 °C/W Tj Maximum Operating Junction Temperature 275 °C AVALANCHE CHARACTERISTICS Symbol Max Value Unit IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) Parameter 24 A EAS Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 25 V) 350 mJ ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol Parameter Test Conditions Drain-source Breakdown Voltage ID = 250 µA, VGS = 0 IDSS Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating IGSS Gate-body Leakage Current (VDS = 0) VGS = ± 16 V V(BR)DSS Min. Typ. Max. 30 Unit V VDS = Max Rating, TC = 125 °C 1 µA 10 µA ±100 nA Max. Unit ON (1) Symbol Parameter Test Conditions Min. Typ. VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250µA RDS(on) Static Drain-source On Resistance VGS = 10 V, ID = 12 A 0025 0.028 Ω VGS = 5 V, ID = 12 A 0.032 0.040 Ω Typ. Max. Unit 1 V DYNAMIC Symbol gfs (1) 2/8 Parameter Forward Transconductance Test Conditions VDS = 15 V, ID = 12 A VDS = 25V, f = 1 MHz, VGS = 0 Min. 23 S 1670 pF Ciss Input Capacitance Coss Output Capacitance 345 pF Crss Reverse Transfer Capacitance 120 pF STD30PF03L - STD30PF03L-1 ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON Symbol td(on) tr Qg Qgs Qgd Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions Min. VDD = 24 V, ID = 24 A RG = 4.7Ω VGS = 4.5V (see test circuit, Figure 3) VDD = 15 V, ID = 24 A, VGS = 5 V Typ. Max. Unit 64 ns 122 ns 18.5 5.5 11 25 nC nC nC Typ. Max. Unit SWITCHING OFF Symbol td(off) tf Parameter Turn-off-Delay Time Fall Time Test Conditions Min. VDD = 24 V, ID = 24 A, RG = 4.7Ω, VGS = 4.5V (see test circuit, Figure 3) 36 26 ns ns SOURCE DRAIN DIODE Symbol ISD Parameter Test Conditions Min. Typ. Max. Unit Source-drain Current 24 A ISDM (2) Source-drain Current (pulsed) 96 A VSD (1) Forward On Voltage ISD = 24 A, VGS = 0 2.3 V Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 24 A, di/dt = 100 A/µs, VDD = 24 V, Tj = 150 °C (see test circuit, Figure 5) trr Qrr IRRM 40 52 2.6 ns µC A Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. 3/8 STD30PF03L - STD30PF03L-1 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 4/8 STD30PF03L - STD30PF03L-1 TO-252 (DPAK) MECHANICAL DATA mm DIM. MIN. TYP. inch MAX. MIN. TYP. MAX. A 2.20 2.40 0.087 0.094 A1 0.90 1.10 0.035 0.043 A2 0.03 0.23 0.001 0.009 B 0.64 0.90 0.025 0.035 B2 5.20 5.40 0.204 0.213 C 0.45 0.60 0.018 0.024 C2 0.48 0.60 0.019 0.024 D 6.00 6.20 0.236 0.244 E 6.40 6.60 0.252 0.260 G 4.40 4.60 0.173 0.181 H 9.35 10.10 0.368 0.398 L2 0.8 0.031 L4 0.60 1.00 0.024 0.039 V2 0o 8o 0o 0o P032P_B 5/8 STD30PF03L - STD30PF03L-1 TO-251 (IPAK) MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 2.2 2.4 0.086 0.094 A1 0.9 1.1 0.035 0.043 A3 0.7 1.3 0.027 0.051 B 0.64 0.9 0.025 0.031 B2 5.2 5.4 0.204 0.212 B3 0.85 B5 0.033 0.3 0.012 B6 0.95 0.037 C 0.45 0.6 0.017 C2 0.48 0.6 0.019 0.023 0.023 D 6 6.2 0.236 0.244 E 6.4 6.6 0.252 0.260 G 4.4 4.6 0.173 0.181 H 15.9 16.3 0.626 0.641 L 9 9.4 0.354 0.370 L1 0.8 1.2 0.031 L2 0.8 0.047 1 0.031 0.039 A1 C2 A3 A C H B B6 = 1 = 2 G = = = E B2 = 3 B5 L D B3 L2 L1 0068771-E 6/8 STD30PF03L - STD30PF03L-1 DPAK FOOTPRINT TUBE SHIPMENT (no suffix)* All dimensions are in millimeters All dimensions are in millimeters TAPE AND REEL SHIPMENT (suffix ”T4”)* REEL MECHANICAL DATA DIM. mm MIN. A B DIM. mm inch MIN. MAX. A0 6.8 7 0.267 0.275 B0 10.4 10.6 0.409 0.417 12.1 0.476 B1 1.6 MIN. 1.5 C 12.8 D 20.2 G 16.4 N 50 D 1.5 1.5 E 1.65 1.85 0.065 0.073 F 7.4 7.6 0.291 0.299 2.55 2.75 0.100 0.108 3.9 4.1 0.153 0.161 P1 7.9 8.1 0.311 0.319 P2 1.9 2.1 0.075 0.082 16.3 1.574 0.618 40 0.059 13.2 0.504 0.520 0.795 18.4 0.645 0.724 1.968 22.4 0.881 BASE QTY BULK QTY 2500 2500 0.059 0.063 K0 15.7 12.992 0.059 P0 R MAX. MAX. D1 W MIN. 330 T TAPE MECHANICAL DATA inch MAX. 0.641 * on sales type 7/8 STD30PF03L - STD30PF03L-1 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. © The ST logo is a registered trademark of STMicroelectronics © 2002 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. © http://www.st.com 8/8