STB40NS15 N-CHANNEL 150V - 0.042Ω - 40A D2PAK MESH OVERLAY™ MOSFET PRELIMINARY DATA ■ ■ ■ ■ TYPE VDSS RDS(on) ID STB40NS15 150 V <0.052Ω 40A TYPICAL RDS(on) = 0.042Ω EXTREMELY HIGH dv/dt CAPABILITY VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED DESCRIPTION This powermos MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY™ process. This technology matches and improves the performances compared with standard parts from various sources. 3 1 D 2PAK INTERNAL SCHEMATIC DIAGRAM APPLICATIONS ■ HIGH CURRENT SWITCHING ■ UNINTERRUPTIBLE POWER SUPPLY (UPS) ■ PRIMARYSWITCH IN ISOLATED DC-DC CONVERTERS ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM (● ) PTOT Parameter Value Unit Drain-source Voltage (VGS = 0) 150 V Drain-gate Voltage (RGS = 20 kΩ) 150 V Gate- source Voltage ±20 V Drain Current (continuos) at TC = 25°C 40 A Drain Current (continuos) at TC = 100°C 25 A Drain Current (pulsed) 160 A Total Dissipation at TC = 25°C 140 W 0.933 W/°C Derating Factor dv/dt Peak Diode Recovery voltage slope Tstg Storage Temperature Tj Max. Operating Junction Temperature 9 V/ns –65 to 175 °C 175 °C (•)Pulse width limited by safe operating area December 2001 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. 1/7 STB40NS15 THERMAL DATA Rthj-case Thermal Resistance Junction-case Max 1.07 °C/W Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W Maximum Lead Temperature For Soldering Purpose 300 °C Tl AVALANCHE CHARACTERISTICS Symbol Max Value Unit IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) Parameter 40 A EAS Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) 500 mJ ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol Parameter Test Conditions Drain-source Breakdown Voltage ID = 250 µA, VGS = 0 IDSS Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating IGSS Gate-body Leakage Current (VDS = 0) VGS = ±20V V(BR)DSS Min. Typ. Max. 150 Unit V VDS = Max Rating, TC = 125 °C 1 µA 10 µA ±100 nA ON (1) Symbol Parameter Test Conditions VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250µA RDS(on) Static Drain-source On Resistance VGS = 10V, ID = 40 A Min. Typ. Max. Unit 2 3 4 V 0.044 0.052 Ω Typ. Max. Unit DYNAMIC Symbol gfs (1) 2/7 Parameter Forward Transconductance Test Conditions VDS > ID(on) x RDS(on)max, ID = 20A VDS = 25V, f = 1 MHz, VGS = 0 Min. 20 S Ciss Input Capacitance 2400 pF Coss Output Capacitance 380 pF Crss Reverse Transfer Capacitance 160 pF STB40NS15 ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON Symbol td(on) tr Parameter Turn-on Delay Time Rise Time Test Conditions Min. Typ. Max. Unit VDD = 75V, ID = 20A RG = 4.7Ω, VGS = 10V (see test circuit, Figure 3) 25 ns 45 ns VDD = 120V, ID = 40A, VGS = 10V 100 Qg Total Gate Charge 110 nC Qgs Gate-Source Charge 17 nC Qgd Gate-Drain Charge 47 nC SWITCHING OFF Symbol td(off) Tf tr(Voff) tf tc Parameter Test Conditions Min. Typ. Max. Unit 85 ns Fall Time VDD = 75V, ID = 20A RG = 4.7Ω, VGS = 10V (see test circuit, Figure 3) Off-voltage Rise Time Fall Time Cross-over Time Vclamp = 120V, ID = 20 A, RG = 4.7Ω, VGS = 10V (see test circuit, Figure 5) 47 35 70 ns ns ns Turn-off Delay Time SOURCE DRAIN DIODE Symbol ISD ISDM (2) VSD (1) trr Qrr IRRM Max. Unit Source-drain Current Parameter 40 A Source-drain Current (pulsed) 160 A Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Test Conditions Min. Typ. ISD = 40A, VGS = 0 ISD = 40A, di/dt = 100A/µs, VDD = 50V, Tj = 150°C (see test circuit, Figure 5) 1.5 270 200 1.5 V ns nC A Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. 3/7 STB40NS15 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 4/7 STB40NS15 D2PAK MECHANICAL DATA mm. inch DIM. MIN. TYP MAX. MIN. TYP. MAX. A 4.4 4.6 0.173 0.181 A1 2.49 2.69 0.098 0.106 A2 0.03 0.23 0.001 0.009 B 0.7 0.93 0.027 0.036 B2 1.14 1.7 0.044 0.067 C 0.45 0.6 0.017 0.023 C2 1.23 1.36 0.048 0.053 D 8.95 9.35 0.352 0.368 D1 E 8 0.315 10 E1 10.4 0.393 8.5 0.334 G 4.88 5.28 0.192 0.208 L 15 15.85 0.590 0.625 L2 1.27 1.4 0.050 0.055 L3 1.4 1.75 0.055 0.068 M 2.4 3.2 0.094 0.126 R 0.015 0º 8º 3 V2 0.4 5/7 1 STB40NS15 D2PAK FOOTPRINT TUBE SHIPMENT (no suffix)* TAPE AND REEL SHIPMENT (suffix ”T4”)* REEL MECHANICAL DATA DIM. mm MIN. A DIM. mm inch MIN. MAX. MIN. MAX. A0 10.5 10.7 0.413 0.421 B0 15.7 15.9 0.618 0.626 D 1.5 1.6 0.059 0.063 D1 1.59 1.61 0.062 0.063 E 1.65 1.85 0.065 0.073 F 11.4 11.6 0.449 0.456 K0 4.8 5.0 0.189 0.197 P0 3.9 4.1 0.153 0.161 P1 11.9 12.1 0.468 0.476 P2 1.9 2.1 R 50 1.574 T 0.25 0.35 0.0098 0.0137 W 23.7 24.3 * on sales type 6/7 0.075 0.082 0.933 0.956 MAX. MIN. 330 B 1.5 C 12.8 D 20.2 G 24.4 N 100 T TAPE MECHANICAL DATA inch MAX. 12.992 0.059 13.2 0.504 0.520 26.4 0.960 1.039 0795 3.937 30.4 1.197 BASE QTY BULK QTY 1000 1000 STB40NS15 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics © 2001 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 7/7