STB80NF55-08 N-CHANNEL 55V - 0.0065Ω - 80A D2PAK STripFET POWER MOSFET TYPE STB80NF55-08 ■ VDSS RDS(on) ID 55 V <0.008Ω 80 A TYPICAL RDS(on) = 0.0065Ω 3 1 DESCRIPTION This Power Mosfet is the latest development of STMicroelectronics unique “Single Feature Size ” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. D2PAK INTERNAL SCHEMATIC DIAGRAM APPLICATIONS ■ SOLENOID AND RELAY DRIVERS ■ MOTOR CONTROL, AUDIO AMPLIFIERS ■ DC-DC CONVERTERS ■ AUTOMOTIVE ENVIRONMENT ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS Value Unit Drain-source Voltage (VGS = 0) Parameter 55 V Drain-gate Voltage (RGS = 20 kΩ) 55 V Gate- source Voltage ±20 V ID (**) Drain Current (continuos) at TC = 25°C 80 A ID Drain Current (continuos) at TC = 100°C 57 A IDM (●) Drain Current (pulsed) 320 A PTOT Total Dissipation at TC = 25°C 300 W 2 W/°C EAS(1) Single Pulse Avalanche Energy Derating Factor 870 mJ Tj Tstg Operating Junction Temperature Storage Temperature -55 to 175 -65 to 175°C °C °C ( ●) Pulse width limi ted by safe operating area May 2001 (1) Starting Tj=25°C, ID=40A, VDD=30V (**) Current Limited Package 1/9 STB80NF55-08 THERMAL DATA Rthj-case Thermal Resistance Junction-case Max 0.5 °C/W Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W Maximum Lead Temperature For Soldering Purpose 300 °C Tl ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol V(BR)DSS IDSS IGSS Parameter Test Conditions Min. Typ. Max. Unit Drain-source Breakdown Voltage ID = 250 µA, VGS = 0 Zero Gate Voltage Drain Current (V GS = 0) VDS = Max Rating 1 µA VDS = Max Rating, TC = 125 °C 10 µA Gate-body Leakage Current (VDS = 0) VGS = ±20V ±100 nA 55 V ON (1) Symbol Parameter Test Conditions VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250µA R DS(on) Static Drain-source On Resistance VGS = 10 V, I D = 40 A Min. Typ. Max. Unit 2 3 4 V 0.0065 0.008 Ω Typ. Max. Unit DYNAMIC Symbol gfs (1) 2/9 Parameter Test Conditions Forward Transconductance VDS = 15V, ID = 18 A C iss Input Capacitance VDS = 25V, f = 1 MHz, VGS = 0 Coss Crss Min. 40 S 3850 pF Output Capacitance 800 pF Reverse Transfer Capacitance 250 pF STB80NF55-08 ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON Symbol td(on) tr Qg Qgs Q gd Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions Min. Typ. Max. Unit VDD = 27 V, I D = 40A RG = 4.7Ω VGS = 10V (see test circuit, Figure 3) 25 ns 85 ns VDD = 44V, ID = 80A, VGS = 10V 113 24 46 152 nC nC nC Typ. Max. Unit SWITCHING OFF Symbol Parameter Test Condit ions Min. td(off) tf Turn-off-Delay Time Fall Time VDD = 27V, ID = 40A, R G = 4.7Ω, VGS = 10V (see test circuit, Figure 3) 70 25 ns ns td(off) tf tc Off-voltage Rise Time Fall Time Cross-over Time Vclamp =44V, I D =80A R G = 4.7Ω, VGS = 10V (see test circuit, Figure 5) 85 75 105 ns ns ns SOURCE DRAIN DIODE Symbol Max. Unit Source-drain Current 80 A ISDM (1) Source-drain Current (pulsed) 320 A VSD (2) Forward On Voltage ISD = 80A, VGS = 0 1.5 V Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 80A, di/dt = 100A/µs, VDD = 25V, Tj = 150°C (see test circuit, Figure 5) ISD trr Qrr IRRM Parameter Test Conditions Min. Typ. 80 245 6.4 ns nC A Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. Safe Operating Area Thermal Impedance 3/9 STB80NF55-08 Output Characteristics Tranfer Characteristics Tranconductance Static Drain-Source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations 4/9 STB80NF55-08 Normalized Gate Thereshold Voltage vs Temp. Normalized On Resistance vs Temperature Source-drain Diode Forward Characteristics Normalized BreakdownVoltagevs Temperature 5/9 STB80NF55-08 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/9 STB80NF55-08 D2PAK MECHANICAL DATA mm. inch DIM. MIN. TYP MAX. MIN. TYP. MAX. A 4.4 4.6 0.173 0.181 A1 2.49 2.69 0.098 0.106 A2 0.03 0.23 0.001 0.009 B 0.7 0.93 0.027 0.036 B2 1.14 1.7 0.044 0.067 C 0.45 0.6 0.017 0.023 C2 1.23 1.36 0.048 0.053 D 8.95 9.35 0.352 0.368 D1 E 8 0.315 10 E1 10.4 0.393 8.5 0.334 G 4.88 5.28 0.192 0.208 L 15 15.85 0.590 0.625 L2 1.27 1.4 0.050 0.055 L3 1.4 1.75 0.055 0.068 M 2.4 3.2 0.094 0.126 R 0.015 0º 8º 3 V2 0.4 7/9 1 STB80NF55-08 D2PAK FOOTPRINT TUBE SHIPMENT (no suffix)* TAPE AND REEL SHIPMENT (suffix ”T4”)* REEL MECHANICAL DATA DIM. mm MIN. MAX. A B 1.5 C 12.8 D 20.2 G N 24.4 100 330 T TAPE MECHANICAL DATA DIM. mm inch MIN. MAX. MIN. A0 10.5 10.7 0.413 0.421 B0 D 15.7 1.5 15.9 1.6 0.618 0.626 0.059 0.063 D1 E 1.59 1.65 1.61 1.85 0.062 0.063 0.065 0.073 F 11.4 11.6 0.449 0.456 K0 4.8 5.0 0.189 0.197 P0 P1 3.9 11.9 4.1 12.1 0.153 0.161 0.468 0.476 P2 R 1.9 50 2.1 0.075 0.082 1.574 T 0.25 0.35 0.0098 0.0137 W 23.7 24.3 8/9 * on sales type MAX. 0.933 0.956 inch MIN. MAX. BASE QTY 1000 12.992 0.059 13.2 0.504 0.520 0795 26.4 0.960 1.039 3.937 30.4 1.197 BULK QTY 1000 STB80NF55-08 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. 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