STMICROELECTRONICS STB160NF02L

STB160NF02L
N-CHANNEL 20V - 0.0018Ω - 160A D2PAK
STripFET™ POWER MOSFET
PRELIMINARY DATA
TYPE
STB160NF02L
■
■
■
■
■
VDSS
RDS(on)
ID
20 V
< 0.0027 Ω
160 A
TYPICAL RDS(on) = 0.0018Ω
LOW THRESHOLD DRIVE
ULTRA LOW ON-RESISTANCE
VERY LOW GATE CHARGE
100% AVALANCHE TESTED
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronics unique “Single Feature
Size™” strip-based process. The resulting transistor shows extremely high packing density with
ultra low on-resistance, superior switching characteristics and less critical alignment steps therefore
a remarkable manufacturing reproducibility. This
device is particularly suitable for high current, low
voltage switching application where efficiency is
crucial.
3
1
D2PAK
(TO-263)
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
■ BUCK CONVERTERS IN HIGH
PERFORMANCE TELECOM AND VRMs
■ DC-DC CONVERTERS
ABSOLUTE MAXIMUM RATINGS
Symbol
VDS
VDGR
Parameter
Value
Unit
Drain-source Voltage (VGS = 0)
20
V
Drain-gate Voltage (RGS = 20 kΩ)
20
V
VGS
Gate- source Voltage
±15
V
ID (1)
Drain Current (continuos) at TC = 25°C
160
A
ID
Drain Current (continuos) at TC = 100°C
113
A
Drain Current (pulsed)
640
A
Total Dissipation at TC = 25°C
300
W
2
W/°C
2.65
mJ
–65 to 175
°C
175
°C
IDM (●)
PTOT
Derating Factor
EAS (2)
Tstg
Tj
Single Pulse Avalanche Energy
Storage Temperature
Max. Operating Junction Temperature
(●) Pulse width limited by safe operating area
(1) Limited by Package
(2) I SD ≤100A, di/dt ≤300A/µs, V DD ≤ V(BR)DSS, Tj ≤ TJMAX.
February 2001
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
1/7
STB160NF02L
THERMAL DATA
Rthj-case
Thermal Resistance Junction-case Max
0.5
°C/W
Rthj-amb
Thermal Resistance Junction-ambient Max
62.5
°C/W
Maximum Lead Temperature For Soldering Purpose
300
°C
Tl
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
V(BR)DSS
IDSS
IGSS
Parameter
Test Conditions
Min.
Typ.
Max.
20
Unit
Drain-source
Breakdown Voltage
ID = 250 µA, VGS = 0
V
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
1
µA
VDS = Max Rating, TC = 125 °C
10
µA
Gate-body Leakage
Current (VDS = 0)
VGS = ±15V
±100
nA
Max.
Unit
ON (1)
Symbol
Parameter
Test Conditions
Min.
Typ.
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250µA
RDS(on)
Static Drain-source On
Resistance
VGS = 10 V, ID = 80 A
0.0018
0.0027
Ω
VGS = 5 V, ID = 80 A
0.0038
0.0064
Ω
On State Drain Current
VDS > ID(on) x RDS(on)max,
VGS = 10V
ID(on)
1
V
160
A
DYNAMIC
Symbol
gfs (1)
2/7
Parameter
Forward Transconductance
Test Conditions
VDS > ID(on) x RDS(on)max,
ID =80 A
VDS = 25V, f = 1 MHz, VGS = 0
Min.
Typ.
Max.
Unit
210
S
5600
pF
Ciss
Input Capacitance
Coss
Output Capacitance
3250
pF
Crss
Reverse Transfer
Capacitance
750
pF
STB160NF02L
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol
td(on)
tr
Qg
Qgs
Qgd
Parameter
Turn-on Delay Time
Rise Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Test Conditions
Min.
VDD = 10V, ID = 80A
RG = 4.7Ω VGS = 10V
(see test circuit, Figure 3)
VDD = 16V, ID = 160A,
VGS = 10V
Typ.
Max.
Unit
30
ns
390
ns
130
20
54
nC
nC
nC
SWITCHING OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(off)
tf
Turn-off-Delay Time
Fall Time
VDD = 10V, ID = 80A,
RG = 4.7Ω, VGS = 10V
(see test circuit, Figure 5)
100
90
ns
ns
td(off)
tf
tc
Off-voltage Rise Time
Fall Time
Cross-over Time
Vclamp =16V, ID =40A
RG = 4.7Ω, VGS = 10V
105
50
100
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
ISD
Parameter
Test Conditions
Source-drain Current (pulsed)
VSD (2)
Forward On Voltage
ISD = 160A, VGS = 0
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 80A, di/dt = 100A/µs,
VDD = 15V, Tj = 25°C
(see test circuit, Figure 5)
IRRM
Typ.
Source-drain Current
ISDM (1)
trr
Qrr
Min.
90
225
5
Max.
Unit
160
A
640
A
1.3
V
ns
nC
A
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
3/7
STB160NF02L
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuit For
Resistive Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
4/7
STB160NF02L
D2PAK MECHANICAL DATA
mm.
inch
DIM.
MIN.
TYP
MAX.
MIN.
TYP.
MAX.
A
4.4
4.6
0.173
0.181
A1
2.49
2.69
0.098
0.106
A2
0.03
0.23
0.001
0.009
B
0.7
0.93
0.027
0.036
B2
1.14
1.7
0.044
0.067
C
0.45
0.6
0.017
0.023
C2
1.23
1.36
0.048
0.053
D
8.95
9.35
0.352
0.368
D1
E
8
0.315
10
E1
10.4
0.393
8.5
0.334
G
4.88
5.28
0.192
0.208
L
15
15.85
0.590
0.625
L2
1.27
1.4
0.050
0.055
L3
1.4
1.75
0.055
0.068
M
2.4
3.2
0.094
0.126
R
0.015
0º
8º
3
V2
0.4
5/7
1
STB160NF02L
D2PAK FOOTPRINT
TUBE SHIPMENT (no suffix)*
TAPE AND REEL SHIPMENT (suffix ”T4”)*
REEL MECHANICAL DATA
DIM.
mm
MIN.
A
DIM.
mm
inch
MIN.
MAX.
MIN.
MAX.
A0
10.5
10.7
0.413 0.421
B0
15.7
15.9
0.618 0.626
D
1.5
1.6
0.059 0.063
D1
1.59
1.61
0.062 0.063
E
1.65
1.85
0.065 0.073
F
11.4
11.6
0.449 0.456
K0
4.8
5.0
0.189 0.197
P0
3.9
4.1
0.153 0.161
P1
11.9
12.1
0.468 0.476
P2
1.9
2.1
R
50
1.574
T
0.25
0.35 0.0098 0.0137
W
23.7
24.3
* on sales type
6/7
0.075 0.082
0.933 0.956
MAX.
MIN.
330
B
1.5
C
12.8
D
20.2
G
24.4
N
100
T
TAPE MECHANICAL DATA
inch
MAX.
12.992
0.059
13.2
0.504 0.520
26.4
0.960 1.039
0795
3.937
30.4
1.197
BASE QTY
BULK QTY
1000
1000
STB160NF02L
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
© 2000 STMicroelectronics – Printed in Italy – All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A.
http://www.st.com
7/7