STP80NF55L-08 STB80NF55L-08 N-CHANNEL 55V - 0.0065Ω - 80A - TO-220/D2PAK STripFET™ II POWER MOSFET PRELIMINARY DATA TYPE VDSS RDS(on) ID STP80NF55L-08 STB80NF55L-08 55 V 55 V 0.008Ω 0.008Ω 80 A 80 A ■ ■ ■ TYPICAL RDS(on) = 0.0065Ω LOW THRESHOLD DRIVE LOGIC LEVEL DEVICE 3 1 3 1 2 D2PAK TO-220 DESCRIPTION This Power Mosfet is the latest development of STMicroelectronics unique “Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS ■ SOLENOID AND RELAY DRIVERS ■ MOTOR CONTROL, AUDIO AMPLIFIERS ■ DC-DC CONVERTERS ■ AUTOMOTIVE ENVIRONMENT ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR Value Unit Drain-source Voltage (VGS = 0) Parameter 55 V Drain-gate Voltage (RGS = 20 kΩ) 55 V ± 16 V 80 A VGS Gate- source Voltage ID (1) Drain Current (continuos) at TC = 25°C ID (1) Drain Current (continuos) at TC = 100°C 80 A IDM () Drain Current (pulsed) 320 A Total Dissipation at TC = 25°C 300 W Derating Factor 2 W/°C Peak Diode Recovery voltage slope 15 V/ns Single Pulse Avalanche Energy 870 mJ –55 to 175 °C 175 °C PTOT dv/dt (2) EAS(3) Tstg Tj Storage Temperature Max. Operating Junction Temperature (● ) Pulse width limited by safe operating area April 2003 (1) Current Limited by Package (2) ISD ≤80A, di/dt ≤500A/µs, VDD =40V Tj ≤ TJMAX. (3) Starting Tj=25°C, ID=40A, VDD=40V 1/8 STP80NF55L-08 THERMAL DATA Rthj-case Thermal Resistance Junction-case Max 0.5 °C/W Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W Maximum Lead Temperature For Soldering Purpose 300 °C Tl ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol V(BR)DSS IDSS IGSS Parameter Test Conditions Min. Typ. Max. 55 Unit Drain-source Breakdown Voltage ID = 250 µA, VGS = 0 V Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating 1 µA VDS = Max Rating, TC = 125 °C 10 µA Gate-body Leakage Current (VDS = 0) VGS = ± 16V ±100 nA Max. Unit ON (1) Symbol Parameter Test Conditions VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250µA RDS(on) Static Drain-source On Resistance VGS = 10 V, ID = 40 A VGS = 5 V, ID = 40 A Min. 1 Typ. 1.6 2.5 V 0.0065 0.008 0.008 0.01 Ω Ω Typ. Max. Unit DYNAMIC Symbol 2/8 Parameter gfs Forward Transconductance Ciss Input Capacitance Coss Crss Test Conditions VDS =15V , ID =40 A Min. 150 S 4350 pF Output Capacitance 800 pF Reverse Transfer Capacitance 260 pF VDS = 25V, f = 1 MHz, VGS = 0 STP80NF55L-08 ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON Symbol td(on) tr Qg Qgs Qgd Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions Min. VDD = 27V, ID = 40A RG = 4.7Ω VGS = 4.5V (see test circuit, Figure 3) VDD = 27.5 V, ID = 80A, VGS = 4.5V Typ. Max. Unit 35 ns 145 ns 75 20 30 100 nC nC nC Typ. Max. Unit SWITCHING OFF Symbol td(off) tf Parameter Turn-off-Delay Time Fall Time Test Conditions Min. VDD = 27V, ID = 40A, RG = 4.7Ω, VGS = 4.5V (see test circuit, Figure 3) 85 65 ns ns SOURCE DRAIN DIODE Symbol ISD ISDM (2) VSD (2) trr Qrr IRRM Parameter Test Conditions Max. Unit Source-drain Current 80 A Source-drain Current (pulsed) 320 A Forward On Voltage ISD = 80A, VGS = 0 Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 80A, di/dt = 100A/µs, VDD = 20V, Tj = 150°C (see test circuit, Figure 5) Min. Typ. 1.5 85 280 6.5 V ns nC A Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. 3/8 STP80NF55L-08 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 4/8 STP80NF55L-08 TO-220 MECHANICAL DATA DIM. A mm. MIN. TYP 4.40 inch MAX. MIN. 4.60 0.173 TYP. MAX. 0.181 b 0.61 0.88 0.024 0.034 b1 1.15 1.70 0.045 0.066 c 0.49 0.70 0.019 0.027 D 15.25 15.75 0.60 0.620 E 10 10.40 0.393 0.409 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 F 1.23 1.32 0.048 0.052 H1 6.20 6.60 0.244 0.256 J1 2.40 2.72 0.094 0.107 L 13 14 0.511 0.551 L1 3.50 3.93 0.137 0.154 L20 16.40 L30 28.90 0.645 1.137 øP 3.75 3.85 0.147 0.151 Q 2.65 2.95 0.104 0.116 5/8 STP80NF55L-08 D2PAK MECHANICAL DATA mm. inch DIM. MIN. TYP MAX. MIN. TYP. MAX. A 4.4 4.6 0.173 0.181 A1 2.49 2.69 0.098 0.106 A2 0.03 0.23 0.001 0.009 B 0.7 0.93 0.027 0.036 B2 1.14 1.7 0.044 0.067 C 0.45 0.6 0.017 0.023 C2 1.23 1.36 0.048 0.053 D 8.95 9.35 0.352 0.368 D1 E 8 0.315 10 E1 10.4 0.393 8.5 0.334 G 4.88 5.28 0.192 0.208 L 15 15.85 0.590 0.625 L2 1.27 1.4 0.050 0.055 L3 1.4 1.75 0.055 0.068 M 2.4 3.2 0.094 0.126 R 0.015 0º 4º 3 V2 0.4 6/8 1 STP80NF55L-08 D2PAK FOOTPRINT TUBE SHIPMENT (no suffix)* TAPE AND REEL SHIPMENT (suffix ”T4”)* REEL MECHANICAL DATA DIM. mm MIN. A DIM. mm inch MIN. MAX. MIN. A0 10.5 10.7 0.413 0.421 B0 15.7 15.9 0.618 0.626 D 1.5 1.6 0.059 0.063 D1 1.59 1.61 0.062 0.063 E 1.65 1.85 0.065 0.073 MAX. MIN. 330 B 1.5 C 12.8 D 20.2 G 24.4 N 100 T TAPE MECHANICAL DATA inch MAX. 12.992 0.059 13.2 0.504 0.520 26.4 0.960 1.039 0795 3.937 30.4 1.197 BASE QTY BULK QTY 1000 1000 MAX. F 11.4 11.6 0.449 0.456 K0 4.8 5.0 0.189 0.197 P0 3.9 4.1 0.153 0.161 P1 11.9 12.1 0.468 0.476 P2 1.9 2.1 R 50 1.574 T 0.25 0.35 0.0098 0.0137 W 23.7 24.3 0.075 0.082 0.933 0.956 * on sales type 7/8 STP80NF55L-08 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. 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