STD20N06 N - CHANNEL ENHANCEMENT MODE ”ULTRA HIGH DENSITY” POWER MOS TRANSISTOR PRELIMINARY DATA TYPE V DSS R DS( on) ID STD20N06 60 V < 0.03 Ω 20 A (*) ■ ■ ■ ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.026 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC HIGH CURRENT CAPABILITY o 175 C OPERATING TEMPERATURE HIGH dV/dt RUGGEDNESS THROUGH-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE (SUFFIX ”-1”) SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE & REEL (SUFFIX ”T4”) 3 1 IPAK TO-251 (Suffix ”-1”) DESCRIPTION This series of POWER MOSFETS represents the latest development in low voltage technology. The ultra high cell density process (UHD) produced with fine geometries on advanced equipment gives the device extremely low RDS(on) as well as good switching performance and high avalanche energy capability. 3 2 1 DPAK TO-252 (Suffix ”T4”) INTERNAL SCHEMATIC DIAGRAM APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING ■ POWER MOTOR CONTROL ■ DC-DC & DC-AC CONVERTERS ■ SYNCRONOUS RECTIFICATION ■ ABSOLUTE MAXIMUM RATINGS Symbol VD S V DG R Parameter Value Unit Drain-source Voltage (V GS = 0) 60 V Drain- gate Voltage (R GS = 20 kΩ) 60 V ± 20 V ID Drain Current (continuous) at T c = 25 oC 20 A ID o Drain Current (continuous) at T c = 100 C 14 A Drain Current (pulsed) 80 A Total Dissipation at Tc = 25 C 60 W Derating Factor 0.4 W/o C V GS ID M(•) P tot T stg Tj Gate-source Voltage o Storage Temperature Max. Operating Junction Temperature -65 to 175 o C 175 o C (*) Current limited by the package (•) Pulse width limited by safe operating area (*) March 1995 1/10 STD20N06 THERMAL DATA R thj-cas e Rthj- amb Rthj- amb Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Case-sink Maximum Lead Temperature For Soldering Purpose Max Max Typ o 2.5 100 1.5 300 C/W C/W o C/W o C o AVALANCHE CHARACTERISTICS Symbol Parameter Max Value Unit IA R Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by T j max, δ < 1%) 20 A E AS Single Pulse Avalanche Energy (starting T j = 25 o C, ID = I AR, L = 330 µH, V DD = 25 V) (see waveforms, figure 2) 80 mJ E AR Repetitive Avalanche Energy (pulse width limited by T j max, δ < 1%) 20 mJ IA R Avalanche Current, Repetitive or Not-Repetitive (T c = 100 o C, pulse width limited by T j max, δ < 1%) 14 A ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symbol V( BR)DSS Parameter Drain-source Breakdown Voltage Test Conditions I D = 250 µA VG S = 0 I DS S Zero Gate Voltage V DS = Max Rating Drain Current (V GS = 0) V DS = Max Rating x 0.8 IG SS Gate-body Leakage Current (V D S = 0) Min. Typ. Max. 60 Unit V 250 1000 µA µA ± 100 nA Max. Unit 3 4 V 0.026 0.03 0.06 Ω Ω T c = 125 oC V GS = ± 20 V ON (∗) Symbol Parameter Test Conditions ID = 250 µA V G S(th) Gate Threshold Voltage V DS = V GS R DS( on) Static Drain-source On Resistance V GS = 10V ID = 10 A V GS = 10V I D = 10 A I D( on) On State Drain Current V DS > ID( on) x RD S(on) max V GS = 10 V Min. 2 Typ. T c = 100 oC 20 A DYNAMIC Symbol gfs (∗) C iss C oss C rss 2/10 Parameter Test Conditions Forward Transconductance V DS > ID( on) x RD S(on) max ID = 10 A Input Capacitance Output Capacitance Reverse Transfer Capacitance V DS = 25 V VG S = 0 f = 1 MHz Min. Typ. 11 16 2000 350 80 Max. Unit S 2800 450 120 pF pF pF STD20N06 ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol t d(on) tr (di/dt) on Qg Q gs Q gd Typ. Max. Unit Turn-on Time Rise Time Parameter V DD = 30 V ID = 10 A VGS = 10 V R G = 50 Ω (see test circuit, figure 3) Test Conditions 45 280 65 380 ns ns Turn-on Current Slope V DD = 48 V ID = 20 A R G = 50 Ω VGS = 10 V (see test circuit, figure 5) 240 Total Gate Charge Gate-Source Charge Gate-Drain Charge V DD = 40 V ID = 20 A Min. V GS = 10 V A/µs 60 10 20 80 nC nC nC Typ. Max. Unit 55 125 200 75 170 270 ns ns ns Typ. Max. Unit 20 80 A A SWITCHING OFF Symbol t r(Vof f) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Conditions Min. V DD = 48 V ID = 20 A R G = 50 Ω VGS = 10 V (see test circuit, figure 5) SOURCE DRAIN DIODE Symbol Parameter Test Conditions IS D I SDM(•) Source-drain Current Source-drain Current (pulsed) V S D (∗) Forward On Voltage I SD = 20 A Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 20 A di/dt = 100 A/µs T j = 150 o C V DD = 30 V (see test circuit, figure 5) t rr Q rr I RRM Min. VG S = 0 1.5 V 80 ns 0.3 µC 7 A (∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % (•) Pulse width limited by safe operating area Safe Operating Area Thermal Impedance 3/10 STD20N06 Derating Curve Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage 4/10 STD20N06 Capacitance Variations Normalized Gate Threshold Voltage vs Temperature Normalized On Resistance vs Temperature Turn-on Current Slope Turn-off Drain-source Voltage Slope Cross-over Time 5/10 STD20N06 Switching Safe Operating Area Accidental Overload Area Source-drain Diode Forward Characteristics Fig. 1: Unclamped Inductive Load Test Circuits 6/10 Fig. 2: Unclamped Inductive Waveforms STD20N06 Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Gate Charge Test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 7/10 STD20N06 TO-251 (IPAK) MECHANICAL DATA mm DIM. MIN. inch MAX. MIN. A 2.2 TYP. 2.4 0.086 0.094 A1 0.9 1.1 0.035 0.043 A3 0.7 1.3 0.027 0.051 B 0.64 0.9 0.025 0.031 B2 5.2 5.4 0.204 0.212 B3 TYP. MAX. 0.85 B5 0.033 0.3 0.012 B6 0.95 0.037 C 0.45 0.6 0.017 0.023 C2 0.48 0.6 0.019 0.023 D 6 6.2 0.236 0.244 E 6.4 6.6 0.252 0.260 G 4.4 4.6 0.173 0.181 H 15.9 16.3 0.626 0.641 L 9 9.4 0.354 0.370 L1 0.8 1.2 0.031 0.047 L2 0.8 1 0.031 0.039 A1 C2 A3 A C H B B6 = 1 = 2 G = = = E B2 = 3 B5 L D B3 L2 L1 0068771-E 8/10 STD20N06 TO-252 (DPAK) MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 2.2 2.4 0.086 0.094 A1 0.9 1.1 0.035 0.043 A2 0.03 0.23 0.001 0.009 B 0.64 0.9 0.025 0.035 B2 5.2 5.4 0.204 0.212 C 0.45 0.6 0.017 0.023 C2 0.48 0.6 0.019 0.023 D 6 6.2 0.236 0.244 E 6.4 6.6 0.252 0.260 G 4.4 4.6 0.173 0.181 H 9.35 10.1 0.368 0.397 L2 0.8 L4 0.031 0.6 1 0.023 0.039 A1 C2 A H A2 C DETAIL ”A” L2 D = = G 2 1 B2 = = = E = 3 B DETAIL ”A” L4 0068772-B 9/10 STD20N06 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A 10/10