STGD3NB60H N-CHANNEL 3A - 600V TO-252 PowerMESH IGBT TYPE STGD3NB60H ■ ■ ■ ■ ■ ■ ■ V CES V CE(sat ) IC 600 V < 2.8 V 3 A HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) LOW ON-VOLTAGE DROP (Vcesat) LOW GATE CHARGE HIGH CURRENT CAPABILITY VERY HIGH FREQUENCY OPERATION OFF LOSSES INCLUDE TAIL CURRENT SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE & REEL (SUFFIX ”T4”) 3 1 DPAK TO-252 (Suffix ”T4”) DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH IGBTs, with outstanding perfomances. The suffix ”H” identifies a family optimized to achieve very low switching times for high frequency applications (<120kHz). INTERNAL SCHEMATIC DIAGRAM APPLICATIONS ■ HIGH FREQUENCY MOTOR CONTROLS ■ SMPS AND PFC IN BOTH HARD SWITCH AND RESONANT TOPOLOGIES ABSOLUTE MAXIMUM RATINGS Symb ol Value Un it V CES Collector-Emitter Voltage (VGS = 0) Parameter 600 V V ECR Emitter-Collector Voltage 20 V V GE G ate-Emitter Voltage ± 20 V o IC Collector Current (continuous) at Tc = 25 C 6 A IC Collector Current (continuous) at Tc = 100 C o 3 A 24 A 35 W 0.28 W /o C I CM (•) P tot Collector Current (pulsed) o T otal Dissipation at Tc = 25 C Derating Factor T s tg Tj Storage T emperature Max. Operating Junction Temperature -65 to 150 o C 150 o C (•) Pulse width limited by safe operating area June 1999 1/8 STGD3NB60H THERMAL DATA R thj -case R thj -amb R thc-sink Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Case-sink Max Max T yp o 3.57 100 1.5 C/W C/W o C/W o ELECTRICAL CHARACTERISTICS (Tj = 25 oC unless otherwise specified) OFF Symbo l Parameter Test Con ditions Collector-Emitt er Breakdown Voltage I C = 250 µA I CES Collector cut-off (V GE = 0) V CE = Max Rating V CE = Max Rating IGES Gate-Emitter Leakage Current (VCE = 0) V GE = ± 20 V V BR(CES) V GE = 0 Min. Typ. Max. 600 Unit V 10 100 µA µA ± 100 nA Max. Unit 5 V 2.4 1.9 2.8 V V Min. Typ. Max. Unit 1.3 2.4 160 23 4.5 235 33 6.6 300 43 8.6 pF pF pF 21 6 7.6 27 nC nC nC T j = 25 oC T j = 125 o C V CE = 0 ON (∗) Symbo l V GE(th) V CE(SAT ) Parameter Test Con ditions Gate Threshold Voltage V CE = V GE IC = 250 µA Collector-Emitt er Saturation Voltage V GE = 15 V V GE = 15 V IC = 3 A IC = 3 A Min. Typ. 3 Tj = 125 o C DYNAMIC Symbo l gf s Parameter Test Con ditions Forward Transconductance V CE =25 V IC = 3 A C i es C o es C res Input Capacitance Output Capacitance Reverse Transfer Capacitance V CE = 25 V f = 1 MHz QG Q GE Q GC Total G ate Charge Gate-Emitter Charge Gate-Collector Charge V CE = 480 V Latching Current V clamp = 480 V T j = 150 o C I CL IC = 3 A V GE = 0 V GE = 15 V R G =10Ω S 12 A SWITCHING ON Symbo l t d(on) tr (di/dt) on Eo n 2/8 Parameter Test Co nditions Min . T yp. Max. Unit Delay Time Rise Time V CC = 480 V V GE = 15 V IC = 3 A R G = 10Ω 16 30 ns ns Turn-on Current Slope V CC = 480 V R G = 10 Ω T j = 125 o C IC = 3 A V GE = 15 V 400 A/µs 37 µJ Turn-on Switching Losses STGD3NB60H ELECTRICAL CHARACTERISTICS (continued) SWITCHING OFF Symbo l Parameter Test Con ditions Min. Typ. Max. Unit tc t r (v off ) t d (off) tf E o ff(**) E ts Cross-O ver Time V CC = 480 V Off Voltage Rise Time R GE = 10 Ω Delay Time Fall T ime Turn-off Switching Loss Total Switching Loss IC = 3 A V GE = 15 V 90 36 53 70 33 65 ns ns ns ns µJ µJ tc t r (v off ) t d (off) tf E o ff(**) E ts Cross-O ver Time V CC = 480 V Off Voltage Rise Time R GE = 10 Ω T j = 125 o C Delay Time Fall T ime Turn-off Switching Loss Total Switching Loss IC = 3 A V GE = 15 V 180 82 58 110 88 125 ns ns ns ns µJ µJ (•) Pulse width limited by max. junction temperature (∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % (**)Losses Include Also The Tail (Jedec Standardization) Thermal Impedance 3/8 STGD3NB60H Output Characteristics Transfer Characteristics Transconductance Collector-Emitter On Voltage vs Temperature Collector-Emitter On Voltage vs Collector Current Gate Threshold vs Temperature 4/8 STGD3NB60H Normalized Breakdown Voltage vs Temperature Capacitance Variations Gate Charge vs Gate-Emitter Voltage Total Switching Losses vs Gate Resistance Total Switching Losses vs Temperature Total Switching Losses vs Collector Current 5/8 STGD3NB60H Switching Off Safe Operating Area Fig. 1: Gate Charge test Circuit Fig. 3: Switching Waveforms 6/8 Fig. 2: Test Circuit For Inductive Load Switching STGD3NB60H TO-252 (DPAK) MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 2.2 2.4 0.086 0.094 A1 0.9 1.1 0.035 0.043 A2 0.03 0.23 0.001 0.009 B 0.64 0.9 0.025 0.035 B2 5.2 5.4 0.204 0.212 C 0.45 0.6 0.017 0.023 C2 0.48 0.6 0.019 0.023 D 6 6.2 0.236 0.244 E 6.4 6.6 0.252 0.260 G 4.4 4.6 0.173 0.181 H 9.35 10.1 0.368 0.397 L2 0.8 L4 0.031 0.6 1 0.023 0.039 A1 C2 A H A2 C DETAIL ”A” L2 D = 1 = G 2 = = = E = B2 3 B DETAIL ”A” L4 0068772-B 7/8 STGD3NB60H Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibil ity for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specific ation mentioned in this publication are subjec t to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics 1999 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. 8/8 http://www.st.com .