STMICROELECTRONICS STGD3NB60H

STGD3NB60H

N-CHANNEL 3A - 600V TO-252
PowerMESH IGBT
TYPE
STGD3NB60H
■
■
■
■
■
■
■
V CES
V CE(sat )
IC
600 V
< 2.8 V
3 A
HIGH INPUT IMPEDANCE
(VOLTAGE DRIVEN)
LOW ON-VOLTAGE DROP (Vcesat)
LOW GATE CHARGE
HIGH CURRENT CAPABILITY
VERY HIGH FREQUENCY OPERATION
OFF LOSSES INCLUDE TAIL CURRENT
SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL
(SUFFIX ”T4”)
3
1
DPAK
TO-252
(Suffix ”T4”)
DESCRIPTION
Using the latest high voltage technology based
on a patented strip layout, STMicroelectronics
has designed an advanced family of IGBTs, the
PowerMESH
IGBTs,
with
outstanding
perfomances. The suffix ”H” identifies a family
optimized to achieve very low switching times for
high frequency applications (<120kHz).
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
■ HIGH FREQUENCY MOTOR CONTROLS
■ SMPS AND PFC IN BOTH HARD SWITCH
AND RESONANT TOPOLOGIES
ABSOLUTE MAXIMUM RATINGS
Symb ol
Value
Un it
V CES
Collector-Emitter Voltage (VGS = 0)
Parameter
600
V
V ECR
Emitter-Collector Voltage
20
V
V GE
G ate-Emitter Voltage
± 20
V
o
IC
Collector Current (continuous) at Tc = 25 C
6
A
IC
Collector Current (continuous) at Tc = 100 C
o
3
A
24
A
35
W
0.28
W /o C
I CM (•)
P tot
Collector Current (pulsed)
o
T otal Dissipation at Tc = 25 C
Derating Factor
T s tg
Tj
Storage T emperature
Max. Operating Junction Temperature
-65 to 150
o
C
150
o
C
(•) Pulse width limited by safe operating area
June 1999
1/8
STGD3NB60H
THERMAL DATA
R thj -case
R thj -amb
R thc-sink
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Thermal Resistance Case-sink
Max
Max
T yp
o
3.57
100
1.5
C/W
C/W
o
C/W
o
ELECTRICAL CHARACTERISTICS (Tj = 25 oC unless otherwise specified)
OFF
Symbo l
Parameter
Test Con ditions
Collector-Emitt er
Breakdown Voltage
I C = 250 µA
I CES
Collector cut-off
(V GE = 0)
V CE = Max Rating
V CE = Max Rating
IGES
Gate-Emitter Leakage
Current (VCE = 0)
V GE = ± 20 V
V BR(CES)
V GE = 0
Min.
Typ.
Max.
600
Unit
V
10
100
µA
µA
± 100
nA
Max.
Unit
5
V
2.4
1.9
2.8
V
V
Min.
Typ.
Max.
Unit
1.3
2.4
160
23
4.5
235
33
6.6
300
43
8.6
pF
pF
pF
21
6
7.6
27
nC
nC
nC
T j = 25 oC
T j = 125 o C
V CE = 0
ON (∗)
Symbo l
V GE(th)
V CE(SAT )
Parameter
Test Con ditions
Gate Threshold
Voltage
V CE = V GE
IC = 250 µA
Collector-Emitt er
Saturation Voltage
V GE = 15 V
V GE = 15 V
IC = 3 A
IC = 3 A
Min.
Typ.
3
Tj = 125 o C
DYNAMIC
Symbo l
gf s
Parameter
Test Con ditions
Forward
Transconductance
V CE =25 V
IC = 3 A
C i es
C o es
C res
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V CE = 25 V
f = 1 MHz
QG
Q GE
Q GC
Total G ate Charge
Gate-Emitter Charge
Gate-Collector Charge
V CE = 480 V
Latching Current
V clamp = 480 V
T j = 150 o C
I CL
IC = 3 A
V GE = 0
V GE = 15 V
R G =10Ω
S
12
A
SWITCHING ON
Symbo l
t d(on)
tr
(di/dt) on
Eo n
2/8
Parameter
Test Co nditions
Min .
T yp.
Max.
Unit
Delay Time
Rise Time
V CC = 480 V
V GE = 15 V
IC = 3 A
R G = 10Ω
16
30
ns
ns
Turn-on Current Slope
V CC = 480 V
R G = 10 Ω
T j = 125 o C
IC = 3 A
V GE = 15 V
400
A/µs
37
µJ
Turn-on Switching
Losses
STGD3NB60H
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING OFF
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
tc
t r (v off )
t d (off)
tf
E o ff(**)
E ts
Cross-O ver Time
V CC = 480 V
Off Voltage Rise Time R GE = 10 Ω
Delay Time
Fall T ime
Turn-off Switching Loss
Total Switching Loss
IC = 3 A
V GE = 15 V
90
36
53
70
33
65
ns
ns
ns
ns
µJ
µJ
tc
t r (v off )
t d (off)
tf
E o ff(**)
E ts
Cross-O ver Time
V CC = 480 V
Off Voltage Rise Time R GE = 10 Ω
T j = 125 o C
Delay Time
Fall T ime
Turn-off Switching Loss
Total Switching Loss
IC = 3 A
V GE = 15 V
180
82
58
110
88
125
ns
ns
ns
ns
µJ
µJ
(•) Pulse width limited by max. junction temperature
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(**)Losses Include Also The Tail (Jedec Standardization)
Thermal Impedance
3/8
STGD3NB60H
Output Characteristics
Transfer Characteristics
Transconductance
Collector-Emitter On Voltage vs Temperature
Collector-Emitter On Voltage vs Collector Current
Gate Threshold vs Temperature
4/8
STGD3NB60H
Normalized Breakdown Voltage vs Temperature
Capacitance Variations
Gate Charge vs Gate-Emitter Voltage
Total Switching Losses vs Gate Resistance
Total Switching Losses vs Temperature
Total Switching Losses vs Collector Current
5/8
STGD3NB60H
Switching Off Safe Operating Area
Fig. 1: Gate Charge test Circuit
Fig. 3: Switching Waveforms
6/8
Fig. 2: Test Circuit For Inductive Load Switching
STGD3NB60H
TO-252 (DPAK) MECHANICAL DATA
mm
DIM.
MIN.
inch
TYP.
MAX.
MIN.
TYP.
MAX.
A
2.2
2.4
0.086
0.094
A1
0.9
1.1
0.035
0.043
A2
0.03
0.23
0.001
0.009
B
0.64
0.9
0.025
0.035
B2
5.2
5.4
0.204
0.212
C
0.45
0.6
0.017
0.023
C2
0.48
0.6
0.019
0.023
D
6
6.2
0.236
0.244
E
6.4
6.6
0.252
0.260
G
4.4
4.6
0.173
0.181
H
9.35
10.1
0.368
0.397
L2
0.8
L4
0.031
0.6
1
0.023
0.039
A1
C2
A
H
A2
C
DETAIL ”A”
L2
D
=
1
=
G
2
=
=
=
E
=
B2
3
B
DETAIL ”A”
L4
0068772-B
7/8
STGD3NB60H
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibil ity for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specific ation mentioned in this publication are
subjec t to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
 1999 STMicroelectronics – Printed in Italy – All Rights Reserved
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8/8
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