STGW20NB60K N-CHANNEL 20A - 600V - TO-247 SHORT CIRCUIT PROOF PowerMESH™ IGBT TYPE STGW20NB60K ■ ■ ■ ■ ■ ■ ■ ■ ■ VCES VCE(sat) IC 600 V < 2.8 V 20 A HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) LOW ON-VOLTAGE DROP (Vcesat) LOW ON-LOSSES LOW GATE CHARGE HIGH CURRENT CAPABILITY OFF LOSSES INCLUDE TAIL CURRENT VERY HIGH FREQUENCY OPERATION SHORT CIRCUIT RATED LATCH CURRENT FREE OPERATION 3 2 1 TO-247 DESCRIPTION INTERNAL SCHEMATIC DIAGRAM Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH ™ IGBTs, with outstanding performances. The suffix “K” identifies a family optimized for high frequency motor control applications with short circuit withstand capability. APPLICATIONS ■ HIGH FREQUENCY MOTOR CONTROLS ■ U.P.S. ■ WELDING EQUIPMENTS ABSOLUTE MAXIMUM RATINGS Symbol Value Unit VCES Collector-Emitter Voltage (VGS = 0) 600 V VECR Emitter-Collector Voltage 20 V VGE Gate-Emitter Voltage ±20 V IC Collector Current (continuos) at TC = 25°C 40 A IC Collector Current (continuos) at TC = 100°C 20 A Collector Current (pulsed) 80 A Short Circuit Withstand 10 µs Total Dissipation at TC = 25°C 150 W ICM () Tsc PTOT Parameter Derating Factor Tstg Tj May 2003 Storage Temperature Max. Operating Junction Temperature 1 W/°C –65 to 150 °C 150 °C 1/8 STGW20NB60K THERMAL DATA Rthj-case Thermal Resistance Junction-case Max 0.83 Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W Thermal Resistance Case-heatsink Typ 0.5 °C/W Rthc-h °C/W ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol VBR(CES) Parameter Collectro-Emitter Breakdown Voltage ICES Collector cut-off (VGE = 0) IGES Gate-Emitter Leakage Current (VCE = 0) Test Conditions IC = 250 µA, VGE = 0 Min. Typ. Max. 600 Unit V VCE = Max Rating, TC = 25 °C 10 µA VCE = Max Rating, TC = 125 °C 100 µA VGE = ±20V , VCE = 0 ±100 nA Max. Unit 7 V 2.8 V ON (1) Symbol Parameter Test Conditions Min. Typ. VGE(th) Gate Threshold Voltage VCE = VGE, IC = 250µA VCE(sat) Collector-Emitter Saturation Voltage VGE = 15V, IC = 20 A 2.3 VGE = 15V, IC = 20 A, Tj =125°C 1.9 5 V DYNAMIC Symbol Parameter gfs Forward Transconductance Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance Qg Total Gate Charge Qge Test Conditions Min. VCE = 25 V , IC =20 A Typ. Max. Unit 8 S 1300 pF 200 pF 30 pF 90 nC Gate-Emitter Charge T.B.D. nC Qgc Gate-Collector Charge T.B.D. nC tscw Short Circuit Withstand Time VCE = 25V, f = 1 MHz, VGE = 0 VCE = 480V, IC = 20 A, VGE = 15V Vce = 0.5 BVces , VGE = 15 V, Tj = 125°C , RG = 10 Ω 10 µs SWITCHING ON Symbol td(on) tr (di/dt)on Eon 2/8 Parameter Turn-on Delay Time Rise Time Turn-on Current Slope Turn-on Switching Losses Test Conditions VCC = 480 V, IC = 20 A RG = 10Ω , VGE = 15 V VCC= 480 V, IC = 20 A RG=10Ω VGE = 15 V,Tj = 125°C Min. Typ. Max. Unit 20 ns 70 ns 350 A/µs 300 µJ STGW20NB60K ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING OFF Symbol tc Parameter Cross-over Time tr(Voff) Off Voltage Rise Time td(off) Delay Time tf Eoff(**) Ets tc Test Conditions Vcc = 480 V, IC = 20 A, RGE = 10 Ω , VGE = 15 V Fall Time Min. Typ. Max. Unit 120 ns 35 ns 130 ns 80 ns Turn-off Switching Loss 0.45 mJ Total Switching Loss 0.6 mJ 190 ns Cross-over Time Vcc = 480 V, IC = 20 A, RGE = 10 Ω , VGE = 15 V Tj = 125 °C tr(Voff) Off Voltage Rise Time 55 ns td(off) Delay Time 160 ns Fall Time 150 ns Turn-off Switching Loss 0.75 mJ Total Switching Loss 1.05 mJ tf Eoff(**) Ets Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by max. junction temperature. (**)Losses include Also the Tail (Jedec Standardization) 3/8 STGW20NB60K Thermal Impedance Switching Off Safe Operating Area Output Characteristics Transfer Characteristics Normalized Gate Threshold Voltage vs Temp. Transconductance 4/8 STGW20NB60K Collector-Emitter On Voltage vs Temperature Gate-Charge vs Gate-Emitter Voltage Capacitance Variations Normalized Break-down Voltage vs Temp. Collector-Emitter on Voltage vs Collector Current Turn-Off Energy Losses vs Temperature 5/8 STGW20NB60K Fig. 1: Gate Charge test Circuit 6/8 Fig. 2: Test Circuit For Inductive Load Switching STGW20NB60K TO-247 MECHANICAL DATA DIM. mm. MIN. TYP inch MAX. MIN. TYP. MAX. A 4.85 5.15 0.19 0.20 D 2.20 2.60 0.08 0.10 E 0.40 0.80 0.015 0.03 F 1 1.40 0.04 F1 3 F2 0.05 0.11 2 0.07 F3 2 2.40 0.07 0.09 F4 3 3.40 0.11 0.13 G 10.90 0.43 H 15.45 15.75 0.60 0.62 L 19.85 20.15 0.78 0.79 L1 3.70 4.30 0.14 0.17 L2 L3 18.50 14.20 L4 14.80 0.56 34.60 L5 M 0.72 5.50 2 0.58 1.36 0.21 3 0.07 0.11 V 5º 5º V2 60º 60º Dia 3.55 3.65 0.14 0.143 7/8 STGW20NB60K Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. 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