STMICROELECTRONICS STGD7NB60H-1

STGD7NB60H-1

N-CHANNEL 7A - 600V IPAK
PowerMESH IGBT
TYPE
V CES
V CE(sat )
IC
STGD7NB60H-1
600 V
< 2.8 V
7 A
■
■
■
■
■
■
■
HIGH INPUT IMPEDANCE
(VOLTAGE DRIVEN)
LOW ON-VOLTAGE DROP (Vcesat)
LOW GATE CHARGE
HIGH CURRENT CAPABILITY
VERY HIGH FREQUENCY OPERATION
OFF LOSSES INCLUDE TAIL CURRENT
THROUGH-HOLE IPAK (TO-251) POWER
PACKAGE IN TUBE (SUFFIX”-1”)
3
2
1
IPAK
TO-251
(Suffix ”-1”)
DESCRIPTION
Using the latest high voltage technology based
on a patented strip layout, STMicroelectronics
has designed an advanced family of IGBTs, the
PowerMESH
IGBTs,
with
outstanding
perfomances. The suffix ”H” identifies a family
optimized to achieve very low switching times for
high frequency applications (<120kHz).
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
■ HIGH FREQUENCY MOTOR CONTROLS
■ SMPS AND PFC IN BOTH HARD SWITCH
AND RESONANT TOPOLOGIES
ABSOLUTE MAXIMUM RATINGS
Symb ol
Value
Un it
V CES
Collector-Emitter Voltage (VGS = 0)
Parameter
600
V
V ECR
Emitter-Collector Voltage
20
V
V GE
G ate-Emitter Voltage
± 20
V
o
IC
Collector Current (continuous) at Tc = 25 C
IC
Collector Current (continuous) at Tc = 100 C
I CM (•)
P tot
o
Collector Current (pulsed)
o
T otal Dissipation at Tc = 25 C
Derating Factor
T s tg
Tj
Storage T emperature
Max. Operating Junction Temperature
14
A
7
A
56
A
55
W
0.44
W /o C
-65 to 150
o
C
150
o
C
(•) Pulse width limited by safe operating area
June 1999
1/8
STGD7NB60H-1
THERMAL DATA
R thj -case
R thj -amb
R thc-sink
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Thermal Resistance Case-sink
Max
Max
T yp
o
2.27
100
1.5
C/W
C/W
o
C/W
o
ELECTRICAL CHARACTERISTICS (Tj = 25 oC unless otherwise specified)
OFF
Symbo l
Parameter
Test Con ditions
Collector-Emitt er
Breakdown Voltage
I C = 250 µA
I CES
Collector cut-off
(V GE = 0)
V CE = Max Rating
V CE = Max Rating
IGES
Gate-Emitter Leakage
Current (VCE = 0)
V GE = ± 20 V
V BR(CES)
V GE = 0
Min.
Typ.
Max.
600
Unit
V
10
100
µA
µA
± 100
nA
Max.
Unit
5
V
2.3
1.9
2.8
V
V
Min.
Typ.
Max.
Unit
3.5
5
390
45
10
560
68
15
730
90
20
pF
pF
pF
42
7.9
17.6
55
nC
nC
nC
T j = 25 oC
T j = 125 o C
V CE = 0
ON (∗)
Symbo l
V GE(th)
V CE(SAT )
Parameter
Test Con ditions
Gate Threshold
Voltage
V CE = V GE
IC = 250 µA
Collector-Emitt er
Saturation Voltage
V GE = 15 V
V GE = 15 V
IC = 7 A
IC = 7 A
Min.
Typ.
3
Tj = 125 o C
DYNAMIC
Symbo l
gf s
Parameter
Test Con ditions
Forward
Transconductance
V CE =25 V
IC = 7 A
C i es
C o es
C res
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V CE = 25 V
f = 1 MHz
QG
Q GE
Q GC
Total G ate Charge
Gate-Emitter Charge
Gate-Collector Charge
V CE = 480 V
Latching Current
V clamp = 480 V
T j = 150 o C
I CL
IC = 7 A
V GE = 0
V GE = 15 V
R G =10Ω
S
28
A
SWITCHING ON
Symbo l
t d(on)
tr
(di/dt) on
Eo n
2/8
Parameter
Test Co nditions
Min .
T yp.
Max.
Unit
Delay Time
Rise Time
V CC = 480 V
V GE = 15 V
IC = 7 A
R G = 10Ω
15
48
ns
ns
Turn-on Current Slope
V CC = 480 V
R G = 10 Ω
T j = 125 o C
IC = 7 A
V GE = 15 V
160
A/µs
70
µJ
Turn-on Switching
Losses
STGD7NB60H-1
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING OFF
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
tc
t r (v off )
t d (off)
tf
E o ff(**)
E ts
Cross-O ver Time
VCC = 480 V
Off Voltage Rise Time R GE = 10 Ω
Delay Time
Fall T ime
Turn-off Switching Loss
Total Switching Loss
IC = 7 A
V GE = 15 V
85
20
75
70
85
130
ns
ns
ns
ns
µJ
µJ
tc
t r (v off )
t d (off)
tf
E o ff(**)
E ts
Cross-O ver Time
VCC = 480 V
Off Voltage Rise Time R GE = 10 Ω
T j = 125 o C
Delay Time
Fall T ime
Turn-off Switching Loss
Total Switching Loss
IC = 7 A
V GE = 15 V
150
50
110
110
220
290
ns
ns
ns
ns
µJ
µJ
(•) Pulse width limited by max. junction temperature
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(**)Losses Include Also The Tail (Jedec Standardization)
Thermal Impedance
3/8
STGD7NB60H-1
Output Characteristics
Transfer Characteristics
Transconductance
Collector-Emitter On Voltage vs Temperature
Collector-Emitter On Voltage vs Collector Current
Gate Threshold vs Temperature
4/8
STGD7NB60H-1
Normalized Breakdown Voltage vs Temperature
Capacitance Variations
Gate Charge vs Gate-Emitter Voltage
Total Switching Losses vs Gate Resistance
Total Switching Losses vs Temperature
Total Switching Losses vs Collector Current
5/8
STGD7NB60H-1
Switching Off Safe Operating Area
Fig. 1: Gate Charge test Circuit
Fig. 3: Switching Waveforms
6/8
Fig. 2: Test Circuit For Inductive Load Switching
STGD7NB60H-1
TO-251 (IPAK) MECHANICAL DATA
mm
DIM.
MIN.
inch
MAX.
MIN.
A
2.2
TYP.
2.4
0.086
0.094
A1
0.9
1.1
0.035
0.043
A3
0.7
1.3
0.027
0.051
B
0.64
0.9
0.025
0.031
B2
5.2
5.4
0.204
0.212
B3
TYP.
MAX.
0.85
B5
0.033
0.3
0.012
B6
0.95
0.037
C
0.45
0.6
0.017
0.023
C2
0.48
0.6
0.019
0.023
D
6
6.2
0.236
0.244
E
6.4
6.6
0.252
0.260
G
4.4
4.6
0.173
0.181
H
15.9
16.3
0.626
0.641
L
9
9.4
0.354
0.370
L1
0.8
1.2
0.031
0.047
L2
0.8
1
0.031
0.039
A1
C2
A3
A
C
H
B
B6
=
1
=
2
G
=
=
=
E
B2
=
3
B5
L
D
B3
L2
L1
0068771-E
7/8
STGD7NB60H-1
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibil ity for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specific ation mentioned in this publication are
subjec t to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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 1999 STMicroelectronics – Printed in Italy – All Rights Reserved
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8/8
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