STW7NA90 STH7NA90FI N - CHANNEL 900V - 1.05Ω - 7A - TO-247/ISOWATT218 FAST POWER MOSFET TYPE STW 7NA90 STH7NA90F I ■ ■ ■ ■ ■ ■ ■ V DSS R DS(on) ID 900 V 900 V < 1.3 Ω < 1.3 Ω 7 A 4.7 A TYPICAL RDS(on) = 1.05 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW INTRINSIC CAPACITANCE GATE CHARGE MINIMIZED REDUCED VOLTAGE SPREAD APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWITCHING ■ SWITCH MODE POWER SUPPLY (SMPS) ■ CONSUMER AND INDUSTRIAL LIGHTING ■ DC-AC CONVERTER FOR WELDING EQUIPMENT AND UNINTERRUPTABLE POWER SUPPLY (UPS) 1 2 3 3 2 1 TO-247 ISOWATT218 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value ST W7NA90 V DS V DGR V GS Un it STH7NA90F I Drain-source Voltage (VGS = 0) 900 V Drain- gate Voltage (R GS = 20 kΩ) 900 V ± 30 G ate-source Voltage V ID Drain Current (continuous) at Tc = 25 o C ID Drain Current (continuous) at Tc = 100 C 4 3 A Drain Current (pulsed) 30 30 A I DM (•) P tot V ISO Ts tg Tj o 7 4.7 A T otal Dissipation at Tc = 25 o C 190 70 W Derating Factor 1.52 0.56 W /o C −−−−−− 4000 Insulation W ithstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature V -65 to 150 o C 150 o C (•) Pulse width limited by safe operating area October 1998 1/9 STW7NA90 - STH7NA90FI THERMAL DATA R thj -case R thj -amb R thc-sink Tl Thermal Resistance Junction-case Max TO-247 ISOWATT 218 0.65 1.78 Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature F or Soldering Purpose 30 0.1 300 o C/W o C/W C/W o C o AVALANCHE CHARACTERISTICS Symbo l Parameter IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) E AS Single Pulse Avalanche Energy (starting Tj = 25 o C, ID = IAR , V DD = 25 V) Max Value Unit 7 A 700 mJ ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symbo l V (BR)DSS Parameter Drain-source Breakdown Voltage Test Con ditions I D = 250 µA V GS = 0 I DSS V DS = Max Rating Zero Gate Voltage Drain Current (V GS = 0) V DS = Max Rating IGSS Gate-body Leakage Current (VDS = 0) Min. Typ. Max. 900 Unit V T c = 100 o C V GS = ± 30 V 50 500 µA µA ± 100 nA ON (∗) Symbo l Parameter Test Con ditions ID = 250 µA V GS(th) Gate Threshold Voltage V DS = V GS R DS(on) Static Drain-source On Resistance V GS = 10 V I D(o n) On State Drain Current V DS > ID(o n) x R DS(on )ma x V GS = 10 V Min. Typ. Max. Unit 2.25 3 3.75 V 1.05 1.3 Ω I D = 3.5 A 7 A DYNAMIC Symbo l g f s (∗) C iss C os s C rss 2/9 Parameter Test Con ditions Forward Transconductance V DS > ID(o n) x R DS(on )ma x Input Capacitance Output Capacitance Reverse Transfer Capacitance V DS = 25 V f = 1 MHz I D = 3.5 A V GS = 0 Min. Typ. 7 9 3100 310 80 Max. Unit S 4000 380 105 pF pF pF STW7NA90 - STH7NA90FI ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbo l Typ. Max. Unit t d(on) tr Turn-on Time Rise Time Parameter V DD = 450 V I D = 3.5 A R G = 4.7 Ω V GS = 10 V (see test circuit, figure 3) Test Con ditions 40 41 54 63 ns ns Qg Q gs Q gd Total G ate Charge Gate-Source Charge Gate-Drain Charge V DD = 720 V 120 20 60 170 nC nC nC Typ. Max. Unit 50 18 73 65 23 97 ns ns ns Typ. Max. Unit 7 30 A A 1.6 V ID = 7 A Min. VGS = 10 V SWITCHING OFF Symbo l tr (Voff) tf tc Parameter Off-voltage Rise T ime Fall T ime Cross-over Time Test Con ditions Min. V DD = 720 V ID = 7 A V GS = 10 V R G = 4.7 Ω (see test circuit, figure 5) SOURCE DRAIN DIODE Symbo l Parameter Test Con ditions ISD I SDM (•) Source-drain Current Source-drain Current (pulsed) V SD (∗) Forward On Voltage I SD = 7 A Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 7 A di/dt = 100 A/µs o T j = 150 C V DD = 100 V (see test circuit, figure 5) t rr Q rr I RRM Min. V GS = 0 830 ns 13.8 µC 33 A (∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % (•) Pulse width limited by safe operating area Safe Operating Area for TO-247 Safe Operating Area for ISOWATT218 3/9 STW7NA90 - STH7NA90FI Thermal Impedance for TO-247 Thermal Impedance for ISOWATT218 Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance 4/9 STW7NA90 - STH7NA90FI Gate Charge vs Gate-source Voltage Capacitance Variations Normalized Gate Threshold Voltage vs Temperature Normalized On Resistance vs Temperature Source-drain Diode Forward Characteristics 5/9 STW7NA90 - STH7NA90FI Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/9 STW7NA90 - STH7NA90FI TO-247 MECHANICAL DATA mm DIM. MIN. TYP. inch MAX. MIN. TYP. MAX. A 4.7 5.3 0.185 0.209 D 2.2 2.6 0.087 0.102 E 0.4 0.8 0.016 0.031 F 1 1.4 0.039 0.055 F3 2 2.4 0.079 0.094 F4 3 3.4 0.118 0.134 G 10.9 0.429 H 15.3 15.9 0.602 0.626 L 19.7 20.3 0.776 0.779 L3 14.2 14.8 0.559 0.413 L4 34.6 1.362 L5 5.5 0.217 0.582 M 2 3 0.079 0.118 Dia 3.55 3.65 0.140 0.144 P025P 7/9 STW7NA90 - STH7NA90FI ISOWATT218 MECHANICAL DATA mm DIM. MIN. inch MAX. MIN. A 5.35 TYP. 5.65 0.210 TYP. MAX. 0.222 C 3.3 3.8 0.130 0.149 D 2.9 3.1 0.114 0.122 D1 1.88 2.08 0.074 0.081 E 0.75 1 0.029 0.039 F 1.05 1.25 0.041 0.049 G 10.8 11.2 0.425 0.441 H 15.8 16.2 0.622 0.637 L1 20.8 21.2 0.818 0.834 L2 19.1 19.9 0.752 0.783 L3 22.8 23.6 0.897 0.929 L4 40.5 42.5 1.594 1.673 L5 4.85 5.25 0.190 0.206 L6 20.25 20.75 0.797 0.817 M 3.5 3.7 0.137 0.145 N 2.1 2.3 0.082 0.090 U 4.6 0.181 L3 C D1 D A E N L2 L6 F L5 H G U M 1 2 3 L1 L4 P025C 8/9 STW7NA90 - STH7NA90FI Information furnished is believed to be accurate and reliable. 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