STN4NE03 N - CHANNEL 30V - 0.045Ω - 4A - SOT-223 STripFET POWER MOSFET TYPE V DSS R DS(on) ID ST N4NE03 30 V < 0.06 Ω 4 A ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.045 Ω EXCEPTIONAL dv/dt CAPABILITY AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED APPLICATION ORIENTED CHARACTERIZATION 2 DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique ” Single Feature Size ” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. 1 2 3 SOT-223 INTERNAL SCHEMATIC DIAGRAM APPLICATIONS DC MOTOR CONTROL (DISK DRIVES, etc.) ■ DC-DC & DC-AC CONVERTERS ■ SYNCHRONOUS RECTIFICATION ■ POWER MANAGEMENT IN BATTERY-OPERATED AND PORTABLE EQUIPMENT ■ ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Uni t V DS Drain-source Voltage (V GS = 0) 30 V VDGR Drain- gate Voltage (R GS = 20 kΩ) 30 V ± 20 V 4 A Drain Current (continuous) at T c = 100 C 2.5 A Drain Current (pulsed) 16 A V GS Gate-source Voltage I D(*) Drain Current (continuous) at T c = 25 o C I D(*) I DM (•) P t ot dv/dt ( 1) T stg Tj o o Total Dissipation at Tc = 25 C 2.5 W Derating Factor 0.02 W/ C 6 V/ ns Peak Diode Recovery voltage slope St orage Temperature Max. Operating Junction Temperature (•) Pulse width limited by safe operating area August 1998 (*) Limited by package o -65 to 150 o C 150 o C (1)ISD ≤ 10A, di/dt ≤ 300A/µs, VDD ≤ V(BR)DSS, Tj ≤ TjMAX 1/8 STN4NE03 THERMAL DATA R thj -pcb R t hj- amb Tl Thermal Resistance Junction-PC Board Max Thermal Resistance Junction-ambient Max (Surface Mounted) Maximum Lead Temperature For Soldering Purpose o 50 60 o C/W C/W o 260 C AVALANCHE CHARACTERISTICS Symb ol Parameter Max Valu e Unit I AR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max, δ < 1%) 4 A E AS Single Pulse Avalanche Energy (starting Tj = 25 o C, I D = IAR , VDD = 25 V) 20 mJ ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symb ol V (BR)DSS I DSS I GSS Parameter Drain-source Breakdown Voltage Test Cond ition s I D = 250 µA Gate-body Leakage Current (V DS = 0) Typ . Max. 30 V GS = 0 Zero G ate Voltage V DS = Max Rating Drain Current (VGS = 0) V DS = Max Rating o C Min. Un it V T c = 125 V GS = ± 20 V 1 10 µA µA ± 100 nA ON (∗) Symb ol Parameter Test Cond ition s ID = 250 µA V GS(th) Gate Threshold Voltage R DS( on) Static Drain-source On V GS = 10 V Resistance ID(o n) V DS = VGS Min. Typ . Max. Un it 2 3 4 V 0.045 0.06 Ω ID = 2 A 4 On State Drain Current V DS > I D(on) x R DS(on) max V GS = 10 V A DYNAMIC Symb ol g fs (∗) C iss C oss C rss 2/8 Parameter Test Cond ition s Forward Transconductance V DS > I D(on) x R DS(on) max Input Capacitance Output Capacitance Reverse T ransfer Capacitance V DS = 25 V f = 1 MHz ID = 2 A VGS = 0 V Min. Typ . 1 3.0 760 150 50 Max. Un it S 1000 200 80 pF pF pF STN4NE03 ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symb ol Typ . Max. Un it t d(on) tr Turn-on Time Rise Time Parameter V DD = 5 V ID = 5 A VGS = 10 V R G = 4.7 Ω (see test circuit, figure 3) Test Cond ition s 10 60 15 90 ns ns Qg Q gs Q gd Total Gate Charge Gate-Source Charge Gate-Drain Charge V DD = 24 V 22 7 7 30 nC nC nC Typ . Max. Un it 8 15 25 15 25 40 ns ns ns Typ . Max. Un it 4 16 A A 1.5 V I D = 10 A Min. V GS = 10 V SWITCHING OFF Symb ol t r(Vof f) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Cond ition s Min. V DD = 24 V I D = 10 A R G = 4.7 Ω V GS = 10 V (see test circuit, figure 5) SOURCE DRAIN DIODE Symb ol Parameter Test Cond ition s I SD I SDM (•) Source-drain Current Source-drain Current (pulsed) V SD (∗) Forward On Voltage I SD = 4 A Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current di/dt = 100 A/µs I SD = 10 A o T j = 150 C V DD = 24 V (see test circuit, figure 5) t rr Q rr I RRM Min. VGS = 0 40 ns 0.06 µC 3.0 A (∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % (•) Pulse width limited by safe operating area Safe Operating Area Thermal Impedance 3/8 STN4NE03 Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations 4/8 STN4NE03 Normalized Gate Threshold Voltage vs Temperature Normalized On Resistance vs Temperature Source-drain Diode Forward Characteristics 5/8 STN4NE03 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/8 STN4NE03 SOT-223 MECHANICAL DATA mm DIM. mils MIN. TYP. MAX. MIN. TYP. MAX. a 2.27 2.3 2.33 89.4 90.6 91.7 b 4.57 4.6 4.63 179.9 181.1 182.3 c 0.2 0.4 0.6 7.9 15.7 23.6 d 0.63 0.65 0.67 24.8 25.6 26.4 e1 1.5 1.6 1.7 59.1 63 66.9 e4 0.32 12.6 f 2.9 3 3.1 114.2 118.1 122.1 g 0.67 0.7 0.73 26.4 27.6 28.7 l1 6.7 7 7.3 263.8 275.6 287.4 l2 3.5 3.5 3.7 137.8 137.8 145.7 L 6.3 6.5 6.7 248 255.9 263.8 L e1 l2 d a c b e4 f l1 C B C E g P008B 7/8 STN4NE03 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics 1998 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. . 8/8