STMICROELECTRONICS STN2NE06

STN2NE06

N-CHANNEL 60V - 0.18Ω - 2A - SOT-223
STripFET POWER MOSFET
TYPE
V DSS
R DS(on)
ID
STN2NE06
60 V
< 0.25 Ω
2 A
■
■
■
■
■
TYPICAL RDS(on) = 0.18 Ω
EXCEPTIONAL dv/dt CAPABILITY
AVALANCHE RUGGED TECHNOLOGY
100 % AVALANCHE TESTED
APPLICATION ORIENTED
CHARACTERIZATION
2
DESCRIPTION
This Power Mosfet is the latest development of
STMicroelectronics unique ”Single Feature
Size” stip-based process. The resulting transistor shows extremely high packing density for low
on-resistance, rugged avalanche characteristics
and less critical alignment steps therefore a remarkable manufacturing reproducibility.
1
2
3
SOT-223
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
■ DC MOTOR CONTROL (DISK DRIVES,etc.)
■ DC-DC & DC-AC CONVERTERS
■ SYNCHRONOUS RECTIFICATION
ABSOLUTE MAXIMUM RATINGS
Symb ol
V DS
V DGR
VGS
Parameter
Value
Drain-source Voltage (VGS = 0)
60
V
Drain- gate Voltage (R GS = 20 kΩ)
60
V
± 20
V
2
A
Gate-source Voltage
o
ID
Drain Current (continuous) at Tc = 25 C
ID
o
I DM (•)
P tot
dv/dt( 1 )
T st g
Tj
Drain Current (continuous) at Tc = 100 C
1.3
A
8
A
Total Dissipation at T c = 25 oC
2.5
W
Derating F actor
0.02
W /o C
6
V/ns
Drain Current (pulsed)
Peak Diode Recovery voltage slope
Storage T emperature
Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
April 1999
Unit
-65 to 150
o
C
150
o
C
( 1) ISD ≤ 8 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
1/8
STN2NE06
THERMAL DATA
R th j-pc b
R thj -amb
Tl
Thermal Resistance Junction-PC Board
Max
Thermal Resistance Junction-ambient
Max
(Surf ace Mounted)
Maximum Lead Temperature F or Soldering Purpose
o
50
60
o
C/W
C/W
o
260
C
AVALANCHE CHARACTERISTICS
Symbo l
Parameter
Max Value
Unit
IAR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
2
A
E AS
Single Pulse Avalanche Energy
(starting Tj = 25 o C, ID = IAR , V DD = 25 V)
20
mJ
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
Symbo l
V (BR)DSS
Parameter
Drain-source
Breakdown Voltage
Test Con ditions
I D = 250 µA
V GS = 0
I DSS
V DS = Max Rating
Zero Gate Voltage
Drain Current (V GS = 0) V DS = Max Rating
IGSS
Gate-body Leakage
Current (VDS = 0)
Min.
Typ.
Max.
60
Unit
V
T c = 125 oC
V GS = ± 20 V
1
10
µA
µA
± 100
nA
Max.
Unit
ON (∗)
Symbo l
Parameter
Test Con ditions
ID = 250 µA
V GS(th)
Gate Threshold Voltage V DS = V GS
R DS(on)
Static Drain-source On
Resistance
V GS = 10 V
I D(o n)
On State Drain Current
V DS > ID(o n) x R DS(on )ma x
V GS = 10 V
Min.
2
ID = 1 A
Typ.
3
4
V
0.18
0.25
Ω
2
A
DYNAMIC
Symbo l
g f s (∗)
C iss
C os s
C rss
2/8
Parameter
Test Con ditions
Forward
Transconductance
V DS > ID(o n) x R DS(on )ma x
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V DS = 25 V
f = 1 MHz
Min.
Typ.
ID = 1 A
1.8
V GS = 0 V
310
45
12.5
Max.
Unit
S
420
61
17
pF
pF
pF
STN2NE06
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbo l
Typ.
Max.
Unit
t d(on)
tr
Turn-on Time
Rise Time
Parameter
V DD = 30 V
R G = 4.7 Ω
Test Con ditions
ID = 1 A
V GS = 10 V
Min.
9
10
13
13.5
ns
ns
Qg
Q gs
Q gd
Total G ate Charge
Gate-Source Charge
Gate-Drain Charge
V DD = 40 V
ID = 2 A
12
5.1
2.7
17
7
4
nC
nC
nC
Typ.
Max.
Unit
4.5
5
12
6
7
16
ns
ns
ns
Typ.
Max.
Unit
2
8
A
A
1.2
V
V GS = 10 V
SWITCHING OFF
Symbo l
tr (Voff)
tf
tc
Parameter
Off-voltage Rise T ime
Fall T ime
Cross-over Time
Test Con ditions
V DD = 48 V
R G = 4.7 Ω
Min.
ID = 2 A
V GS = 10 V
SOURCE DRAIN DIODE
Symbo l
Parameter
Test Con ditions
ISD
I SDM (•)
Source-drain Current
Source-drain Current
(pulsed)
V SD (∗)
Forward On Voltage
I SD = 2 A
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
I SD = 2 A
di/dt = 100 A/µs
Tj = 150 o C
V DD = 30 V
t rr
Q rr
I RRM
Min.
V GS = 0
40
ns
50
nC
2.5
Α
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Safe Operating Area
Thermal Impedance
3/8
STN2NE06
Output Characteristics
Transfer Characteristics
Transconductance
Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage
Capacitance Variations
4/8
STN2NE06
Normalized Gate Threshold Voltage vs
Temperature
Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
5/8
STN2NE06
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuits For
Resistive Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
6/8
STN2NE06
SOT-223 MECHANICAL DATA
mm
DIM.
mils
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
a
2.27
2.3
2.33
89.4
90.6
91.7
b
4.57
4.6
4.63
179.9
181.1
182.3
c
0.2
0.4
0.6
7.9
15.7
23.6
d
0.63
0.65
0.67
24.8
25.6
26.4
e1
1.5
1.6
1.7
59.1
63
66.9
e4
0.32
12.6
f
2.9
3
3.1
114.2
118.1
122.1
g
0.67
0.7
0.73
26.4
27.6
28.7
l1
6.7
7
7.3
263.8
275.6
287.4
l2
3.5
3.5
3.7
137.8
137.8
145.7
L
6.3
6.5
6.7
248
255.9
263.8
L
e1
l2
d
a
c
b
e4
f
l1
C
B
C
E
g
P008B
7/8
STN2NE06
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of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specific ation mentioned in this publication are
subjec t to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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 1999 STMicroelectronics – Printed in Italy – All Rights Reserved
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