STMICROELECTRONICS STP36NE06FP

STP36NE06
STP36NE06FP

N - CHANNEL 60V - 0.032Ω - 36A - TO-220/TO-220FP
STripFET POWER MOSFET
TYPE
V DSS
R DS(on)
ID
ST P36NE06
ST P36NE06FP
60 V
60 V
< 0.040 Ω
< 0.040 Ω
36 A
20 A
■
■
■
■
■
TYPICAL RDS(on) = 0.032 Ω
EXCEPTIONAL dv/dt CAPABILITY
100% AVALANCHE TESTED
LOW GATE CHARGE 100 oC
APPLICATION ORIENTED
CHARACTERIZATION
1
DESCRIPTION
This Power Mosfet is the latest development of
SGS-THOMSON unique ”Single Feature Size ”
strip-based process. The resulting transistor
shows extremely high packing density for low onresistance, rugged avalance characteristics and
less critical alignment steps therefore a remarkable manufacturing reproducibility.
2
3
3
1
TO-220
2
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
■
HIGH CURRENT, HIGH SPEED SWITCHING
■
SOLENOID AND RELAY DRIVERS
■
MOTOR CONTROL, AUDIO AMPLIFIERS
■
DC-DC & DC-AC CONVERTERS
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
STP36NE06
V DS
Uni t
STP36NE06FP
Drain-source Voltage (V GS = 0)
60
V
V DGR
Drain- gate Voltage (R GS = 20 kΩ)
60
V
V GS
Gate-source Voltage
± 20
o
V
ID
Drain Current (continuous) at Tc = 25 C
36
20
A
ID
o
24
14
A
144
144
A
IDM (•)
P t ot
Drain Current (continuous) at Tc = 100 C
Drain Current (pulsed)
o
Total Dissipation at Tc = 25 C
100
35
W
Derating F actor
0.66
0.27
W/ C

2000
V
V ISO
Insulation Withstand Voltage (DC)
dv/dt
Peak Diode Recovery voltage slope
T stg
Tj
Storage T emperature
Max. O perating Junction Temperature
(•) Pulse width limited by safe operating area
July 1998
7
o
V/ ns
-65 to 175
o
C
175
o
C
( 1) ISD ≤ 36 A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
1/9
STP36NE06FP
THERMAL DATA
R t hj-ca se
R t hj- amb
R thc- si nk
Tl
Thermal Resistance Junction-case
T O-220
TO-220F P
1.51
4.28
Max
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature For Soldering Purpose
62.5
0.5
300
o
C/W
o
C/W
C/W
o
C
o
AVALANCHE CHARACTERISTICS
Symb ol
Parameter
I AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
E AS
Single Pulse Avalanche Energy
(starting Tj = 25 o C, I D = IAR , VDD = 25V)
Max Valu e
Unit
36
A
180
mJ
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
Symb ol
V (BR)DSS
I DSS
I GSS
Parameter
Drain-source
Breakdown Voltage
Test Cond ition s
I D = 250 µA
Gate-body Leakage
Current (V DS = 0)
Typ .
Max.
60
V GS = 0
V DS = Max Rating
Zero G ate Voltage
Drain Current (VGS = 0) V DS = Max Rating
o
C
Min.
Un it
V
T c = 125
V GS = ± 20 V
1
10
µA
µA
± 100
nA
ON (∗)
Symb ol
Parameter
Test Cond ition s
ID = 250 µA
V GS(th)
Gate Threshold
Voltage
R DS( on)
Static Drain-source On V GS = 10V
Resistance
ID(o n)
V DS = VGS
Min.
Typ .
Max.
Un it
2
3
4
V
0.032
0.04
Ω
ID = 18 A
36
On State Drain Current V DS > I D(on) x R DS(on) max
V GS = 10 V
A
DYNAMIC
Symb ol
g fs (∗)
C iss
C oss
C rss
2/9
Parameter
Test Cond ition s
Forward
Transconductance
V DS > I D(on) x R DS(on) max
Input Capacitance
Output Capacitance
Reverse T ransfer
Capacitance
V DS = 25 V
f = 1 MHz
I D =18 A
VGS = 0
Min.
Typ .
7
15
2115
260
65
Max.
Un it
S
2800
350
90
pF
pF
pF
STP36NE06FP
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symb ol
t d(on)
tr
(di/dt) on
Qg
Q gs
Q gd
Parameter
Test Cond ition s
Turn-on Time
Rise Time
V DD = 30 V
R G =4.7Ω
Turn-on Current Slope
V DD = 48 V
R G = 4.7 Ω
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V DD = 48 V
Min.
ID = 18 A
V GS = 10 V
Max.
Un it
28
85
40
115
ns
ns
250
ID = 36 A
V GS =10 V
I D = 36 A
Typ .
V GS = 10 V
A/µs
50
13
18
70
nC
nC
nC
Typ .
Max.
Un it
12
25
40
16
35
55
ns
ns
ns
Typ .
Max.
Un it
36
144
A
A
SWITCHING OFF
Symb ol
t r(Vof f)
tf
tc
Parameter
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Cond ition s
Min.
V DD = 48 V I D = 36 A
R G =4.7 Ω VGS = 10 V
SOURCE DRAIN DIODE
Symb ol
I SD
I SDM (•)
V SD (∗)
t rr
Q rr
I RRM
Parameter
Test Cond ition s
Min.
Source-drain Current
Source-drain Current
(pulsed)
Forward On Voltage
I SD = 36 A
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
I SD = 36 A
V DD = 30 V
V GS = 0
di/dt = 100 A/µs
o
Tj = 150 C
1.5
V
75
ns
245
µC
6.5
A
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Safe Operating Area for TO-220
Safe Operating Area for TO-220FP
3/9
STP36NE06FP
Thermal Impedance for TO-220
Thermal Impedance forTO-220FP
Output Characteristics
Transfer Characteristics
Transconductance
Static Drain-source On Resistance
4/9
STP36NE06FP
Gate Charge vs Gate-source Voltage
Capacitance Variations
Normalized Gate Threshold Voltage vs
Temperature
Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
5/9
STP36NE06FP
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuits For
Resistive Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
6/9
STP36NE06FP
TO-220 MECHANICAL DATA
mm
DIM.
MIN.
inch
TYP.
MAX.
MIN.
TYP.
MAX.
A
4.40
4.60
0.173
0.181
C
1.23
1.32
0.048
0.051
D
2.40
2.72
0.094
D1
0.107
1.27
0.050
E
0.49
0.70
0.019
0.027
F
0.61
0.88
0.024
0.034
F1
1.14
1.70
0.044
0.067
F2
1.14
1.70
0.044
0.067
G
4.95
5.15
0.194
0.203
G1
2.4
2.7
0.094
0.106
H2
10.0
10.40
0.393
0.409
14.0
0.511
0.551
L2
16.4
L4
0.645
13.0
2.65
2.95
0.104
0.116
L6
15.25
15.75
0.600
0.620
L7
6.2
6.6
0.244
0.260
L9
3.5
3.93
0.137
0.154
DIA.
3.75
3.85
0.147
0.151
D1
C
D
A
E
L5
H2
G
G1
F1
L2
F2
F
Dia.
L5
L9
L7
L6
L4
P011C
7/9
STP36NE06FP
TO-220FP MECHANICAL DATA
mm
DIM.
MIN.
inch
TYP.
MAX.
MIN.
TYP.
MAX.
A
4.4
4.6
0.173
0.181
B
2.5
2.7
0.098
0.106
D
2.5
2.75
0.098
0.108
E
0.45
0.7
0.017
0.027
F
0.75
1
0.030
0.039
F1
1.15
1.7
0.045
0.067
F2
1.15
1.7
0.045
0.067
G
4.95
5.2
0.195
0.204
G1
2.4
2.7
0.094
0.106
H
10
10.4
0.393
0.409
L2
16
0.630
28.6
30.6
1.126
1.204
L4
9.8
10.6
0.385
0.417
L6
15.9
16.4
0.626
0.645
L7
9
9.3
0.354
0.366
Ø
3
3.2
0.118
0.126
B
D
A
E
L3
L3
L6
F
F1
L7
F2
H
G
G1
¯
1 2 3
L2
8/9
L4
STP36NE06FP
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of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical compone nts in life support devices or systems without express written approval of STMicroelectronics.
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 1998 STMicroelectronics – Printed in Italy – All Rights Reserved
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