STMICROELECTRONICS STW15NB50

STW15NB50
STH15NB50FI

N-CHANNEL 500V - 0.33Ω - 14.6A T0-247/ISOWATT218 PowerMESH MOSFET
TYPE
V DSS
R DS(on)
ID
ST W15NB50
ST H15NB50FI
500 V
500 V
< 0.36 Ω
< 0.36 Ω
14.6 A
10.5 A
■
■
■
■
■
■
TYPICAL RDS(on) = 0.33 Ω
EXTREMELY HIGH dv/dt CAPABILITY
± 30V GATE TO SOURCE VOLTAGE RATING
100% AVALANCHE TESTED
VERY LOW INTRINSIC CAPACITANCES
GATE CHARGE MINIMIZED
3
3
2
2
1
1
DESCRIPTION
Using the latest high voltage MESH OVERLAY
process, SGS-Thomson has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
TO-247
ISOWATT218
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
■
HIGH CURRENT, HIGH SPEED SWITCHING
■
SWITCH MODE POWER SUPPLIES (SMPS)
■
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
STW 15NB50
V DS
V DGR
V GS
Drain-source Voltage (V GS = 0)
500
V
Drain- gate Voltage (R GS = 20 kΩ)
Gate-source Voltage
500
V
± 30
o
ID
Drain Current (continuous) at Tc = 25 C
ID
Drain Current (continuous) at Tc = 100 C
IDM (•)
P t ot
dv/dt( 1 )
o
Drain Current (pulsed)
10.5
A
9.2
6.6
A
58.4
58.4
A
190
80
W
Derating F actor
0.64
1.52
W/ C
o
Peak Diode Recovery voltage slope
Insulation Withstand Voltage (DC)
T stg
Storage T emperature
June 1998
V
14.6
Total Dissipation at Tc = 25 C
V ISO
Tj
Uni t
ST H15NB50FI
Max. O perating Junction Temperature
4
4000
o
V/ ns
V
-65 to 150
o
C
150
o
C
1/9
STW15NB50 - STH15NB50FI
THERMAL DATA
R t hj-ca se
R t hj- amb
R thc- si nk
Tl
Thermal Resistance Junction-case
Max
T O-247
ISOW ATT 218
0.66
1.56
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature For Soldering Purpose
30
0.1
300
o
C/W
o
C/W
C/W
o
C
o
AVALANCHE CHARACTERISTICS
Symb ol
Max Valu e
Unit
I AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
Parameter
14.6
A
E AS
Single Pulse Avalanche Energy
(starting Tj = 25 o C, I D = IAR , VDD = 50 V)
850
mJ
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
Symb ol
V (BR)DSS
I DSS
I GSS
Parameter
Drain-source
Breakdown Voltage
Test Cond ition s
I D = 250 µA
Gate-body Leakage
Current (V DS = 0)
Typ .
Max.
500
V GS = 0
V DS = Max Rating
Zero G ate Voltage
Drain Current (VGS = 0) V DS = Max Rating
o
C
Min.
Un it
V
T c = 125
V GS = ± 30 V
1
50
µA
µA
± 100
nA
ON (∗)
Symb ol
Parameter
Test Cond ition s
ID = 250 µA
V GS(th)
Gate Threshold
Voltage
R DS( on)
Static Drain-source On V GS = 10 V
Resistance
ID(o n)
V DS = VGS
Min.
Typ .
Max.
Un it
3
4
5
V
0.33
0.36
Ω
Ω
ID = 7.5 A
14.6
On State Drain Current V DS > I D(on) x R DS(on) max
V GS = 10 V
A
DYNAMIC
Symb ol
g fs (∗)
C iss
C oss
C rss
2/9
Parameter
Test Cond ition s
Forward
Transconductance
V DS > I D(on) x R DS(on) max
Input Capacitance
Output Capacitance
Reverse T ransfer
Capacitance
V DS = 25 V
f = 1 MHz
I D = 7.5 A
VGS = 0
Min.
Typ .
8
12
2600
330
40
Max.
Un it
S
3400
430
55
pF
pF
pF
STW15NB50 - STH15NB50FI
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symb ol
Typ .
Max.
Un it
t d(on)
tr
Turn-on Time
Rise Time
Parameter
V DD = 250 V I D = 7.5 A
VGS = 10 V
R G = 4.7 Ω
(see test circuit, figure 3)
Test Cond ition s
24
14
34
20
ns
ns
Qg
Q gs
Q gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V DD = 400 V
60
15
27
80
nC
nC
nC
Typ .
Max.
Un it
15
25
35
20
33
47
ns
ns
ns
Typ .
Max.
Un it
14.6
58.4
A
A
1.6
V
I D = 15 A
Min.
VGS = 10 V
SWITCHING OFF
Symb ol
t r(Vof f)
tf
tc
Parameter
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Cond ition s
Min.
V DD = 400 V I D = 15 A
R G = 4.7 Ω V GS = 10 V
(see test circuit, figure 5)
SOURCE DRAIN DIODE
Symb ol
Parameter
Test Cond ition s
I SD
I SDM (•)
Source-drain Current
Source-drain Current
(pulsed)
V SD (∗)
Forward On Voltage
I SD = 15 A
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
I SD = 15 A di/dt = 100 A/µs
o
T j = 150 C
V DD = 100 V
(see test circuit, figure 5)
t rr
Q rr
I RRM
Min.
V GS = 0
680
ns
9
µC
26
A
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Safe Operating Area for TO-247
Safe Operating Area for ISOWATT218
3/9
STW15NB50 - STH15NB50FI
Thermal Impedance for TO-247
Thermal Impedance for ISOWATT218
Output Characteristics
Transfer Characteristics
Transconductance
Static Drain-source On Resistance
4/9
STW15NB50 - STH15NB50FI
Gate Charge vs Gate-source Voltage
Capacitance Variations
Normalized Gate Threshold Voltage vs
Temperature
Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
5/9
STW15NB50 - STH15NB50FI
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuits For
Resistive Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
6/9
STW15NB50 - STH15NB50FI
TO-247 MECHANICAL DATA
mm
DIM.
MIN.
TYP.
inch
MAX.
MIN.
TYP.
MAX.
A
4.7
5.3
0.185
0.209
D
2.2
2.6
0.087
0.102
E
0.4
0.8
0.016
0.031
F
1
1.4
0.039
0.055
F3
2
2.4
0.079
0.094
F4
3
3.4
0.118
0.134
G
10.9
0.429
H
15.3
15.9
0.602
0.626
L
19.7
20.3
0.776
0.779
L3
14.2
14.8
0.559
0.413
L4
34.6
1.362
L5
5.5
0.217
0.582
M
2
3
0.079
0.118
Dia
3.55
3.65
0.140
0.144
P025P
7/9
STW15NB50 - STH15NB50FI
ISOWATT218 MECHANICAL DATA
mm
DIM.
MIN.
inch
TYP.
MAX.
MIN.
TYP.
MAX.
A
5.35
5.65
0.210
0.222
C
3.3
3.8
0.130
0.149
D
2.9
3.1
0.114
0.122
D1
1.88
2.08
0.074
0.081
E
0.75
1
0.029
0.039
F
1.05
1.25
0.041
0.049
G
10.8
11.2
0.425
0.441
H
15.8
16.2
0.622
0.637
L1
20.8
21.2
0.818
0.834
L2
19.1
19.9
0.752
0.783
L3
22.8
23.6
0.897
0.929
L4
40.5
42.5
1.594
1.673
L5
4.85
5.25
0.190
0.206
L6
20.25
20.75
0.797
0.817
M
3.5
3.7
0.137
0.145
N
2.1
2.3
0.082
0.090
U
4.6
0.181
L3
C
D1
D
A
E
N
L2
L6
F
L5
H
G
U
M
1
2
3
L1
L4
P025C
8/9
STW15NB50 - STH15NB50FI
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of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
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 1998 STMicroelectronics – Printed in Italy – All Rights Reserved
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