New Product VS-30ETH06FP-F3, VS-30ETH06FP-N3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 30 A FRED Pt® FEATURES • Reduced Qrr and soft recovery • 175 °C TJ maximum • For PFC CRM/CCM operation 1 Cathode • Fully isolated package (VINS = 2500 VRMS) 3 Anode • UL E78996 pending • Compliant to RoHS Directive 2002/95/EC TO-220 FULL-PAK • Designed and JEDEC-JESD47 qualified according to • Halogen-free according to IEC 61249-2-21 definition (-N3 only) PRODUCT SUMMARY Package TO-220FP IF(AV) 30 A VR 600 V VF at IF 2.6 V trr (typ.) 23 ns DESCRIPTION/APPLICATIONS State of the art hyperfast recovery rectifiers designed with optimized performance of forward voltage drop, hyperfast recovery time and soft recovery. The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness and reliability characteristics. TJ max. 175 °C Diode variation Single die These devices are intended for use in PFC boost stage in the AC/DC section of SMPS, inverters or as freewheeling diodes. Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS 600 V Peak repetitive reverse voltage VRRM Average rectified forward current IF(AV) TC = 37 °C 30 Non-repetitive peak surge current IFSM TJ = 25 °C 220 Operating junction and storage temperatures TJ, TStg A - 65 to 175 °C ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Breakdown voltage, blocking voltage SYMBOL VBR, VR TEST CONDITIONS MIN. TYP. MAX. 600 - - IF = 30 A - 2.00 2.60 IF = 30 A, TJ = 150 °C - 1.34 1.75 VR = VR rated - 0.3 50 TJ = 150 °C, VR = VR rated - 60 500 IR = 100 μA UNITS V Forward voltage VF Reverse leakage current IR Junction capacitance CT VR = 600 V - 33 - pF Series inductance LS Measured lead to lead 5 mm from package body - 8 - nH Revision: 16-Nov-11 μA Document Number: 93403 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product VS-30ETH06FP-F3, VS-30ETH06FP-N3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER Reverse recovery time SYMBOL trr TEST CONDITIONS IRRM TYP. MAX. IF = 1 A, dIF/dt = 50 A/μs, VR = 30 V - 28 35 IF = 1 A, dIF/dt = 100 A/μs, VR = 30 V - 23 30 TJ = 25 °C - 31 - - 77 - - 3.5 - - 7.7 - TJ = 125 °C Peak recovery current MIN. TJ = 25 °C TJ = 125 °C IF = 30 A dIF/dt = 200 A/μs VR = 200 V UNITS ns A TJ = 25 °C - 65 - TJ = 125 °C - 345 - MIN. TYP. MAX. UNITS TJ, TStg - 65 - 175 °C Thermal resistance, junction to case per leg RthJC - - 2.85 Thermal resistance, junction to ambient per leg RthJA Typical socket mount - - 70 Thermal resistance, case to heatsink RthCS Mounting surface, flat, smooth and greased - 0.2 - Reverse recovery charge Qrr nC THERMAL - MECHANICAL SPECIFICATIONS PARAMETER Maximum junction and storage temperature range SYMBOL TEST CONDITIONS Weight Mounting torque Marking device Revision: 16-Nov-11 Case style TO-220 FULL-PAK °C/W - 2 - g - 0.07 - oz. 6 (5) - 12 (10) kgf · cm (lbf · in) 30ETH06FP Document Number: 93403 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product VS-30ETH06FP-F3, VS-30ETH06FP-N3 www.vishay.com Vishay Semiconductors 1000 100 TJ = 175 °C TJ = 150 °C TJ = 25 °C 10 TJ = 175 °C 100 IR - Reverse Current (mA) IF - Instantaneous Forward Current (A) 1000 TJ = 150 °C 10 TJ = 125 °C TJ = 100 °C 1 0.1 TJ = 25 °C 0.01 0.001 0.0001 1 0 0.5 1 1.5 2 3 2.5 0 3.5 100 200 300 400 500 600 VF - Forward Voltage Drop (V) VR - Reverse Voltage (V) Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage CT - Junction Capacitance (pF) 1000 100 TJ = 25 °C 10 0 100 200 300 400 500 600 VR - Reverse Voltage (V) ZthJC - Thermal Impedance (°C/W) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage 10 1 D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 0.1 Single pulse (thermal resistance) 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics Revision: 16-Nov-11 Document Number: 93403 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product VS-30ETH06FP-F3, VS-30ETH06FP-N3 Vishay Semiconductors 180 90 160 80 140 70 120 100 80 60 50 40 30 40 20 Square wave (D = 0.50) Rated VR applied 20 See note (1) 10 0 0 5 10 15 20 25 30 VR = 200 V TJ = 125 °C TJ = 25 °C 0 100 35 1000 IF(AV) - Average Forward Current (A) dIF/dt (A/µs) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt 90 1200 RMS limit 80 1000 70 VR = 200 V TJ = 125 °C TJ = 25 °C 800 60 50 Qrr (nC) Average Power Loss (W) IF = 30 A IF = 15 A 60 DC trr (ns) Allowable Case Temperature (°C) www.vishay.com D = 0.01 D = 0.02 D = 0.05 D = 0.10 D = 0.20 D = 0.50 40 30 20 10 600 IF = 30 A IF = 15 A 400 200 DC 0 0 5 10 15 20 25 30 35 40 45 0 100 1000 IF(AV) - Average Forward Current (A) dIF/dt (A/µs) Fig. 6 - Forward Power Loss Characteristics Fig. 8 - Typical Stored Charge vs. dIF/dt Note Formula used: TC = TJ - (Pd + PdREV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = Rated VR (1) Revision: 16-Nov-11 Document Number: 93403 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product VS-30ETH06FP-F3, VS-30ETH06FP-N3 www.vishay.com Vishay Semiconductors VR = 200 V 0.01 Ω L = 70 μH D.U.T. dIF/dt adjust D IRFP250 G S Fig. 9 - Reverse Recovery Parameter Test Circuit (3) trr IF ta tb 0 Qrr (2) IRRM (4) 0.5 IRRM dI(rec)M/dt (5) 0.75 IRRM (1) dIF/dt (1) dIF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. (4) Qrr - area under curve defined by trr and IRRM Qrr = trr x IRRM 2 (5) dI(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 10 - Reverse Recovery Waveform and Definitions Revision: 16-Nov-11 Document Number: 93403 5 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product VS-30ETH06FP-F3, VS-30ETH06FP-N3 www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- 30 E T H 06 FP -F3 1 2 3 4 5 6 7 8 1 - Vishay Semiconductors product 2 - Current rating (30 A) 3 - E = Single diode 4 - T = TO-220 5 - H = Hyperfast recovery 6 - Voltage rating (06 = 600 V) 7 - FULL-PAK 8 - Environmental digit: -F3 = RoHS compliant and totally lead (Pb)-free -N3 = Halogen-free, RoHS compliant and totally lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION VS-30ETH06FP-F3 50 1000 Antistatic plastic tube VS-30ETH06FP-N3 50 1000 Antistatic plastic tube LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95005 Part marking information www.vishay.com/doc?95440 Revision: 16-Nov-11 Document Number: 93403 6 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors DIMENSIONS in millimeters 10.6 10.4 Hole Ø 3.4 3.1 2.8 2.6 3.7 3.2 7.31 6.91 16.0 15.8 16.4 15.4 10° 3.3 3.1 13.56 13.05 2.54 TYP. 0.9 0.7 0.61 0.38 2.54 TYP. R 0.7 (2 places) R 0.5 4.8 4.6 5° ± 0.5° Revision: 20-Jul-11 5° ± 0.5° 1.4 1.3 2.85 2.65 1.15 TYP. 1.05 Lead assignments Diodes 1 + 2 - Cathode 3 - Anode Conforms to JEDEC outline TO-220 FULL-PAK Document Number: 95005 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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