STMICROELECTRONICS STP4NA60FP

STP4NA60FP
N - CHANNEL ENHANCEMENT MODE
FAST POWER MOS TRANSISTOR
PRELIMINARY DATA
TYPE
STP4NA60FP
■
■
■
■
■
■
■
V DSS
R DS(on)
ID
600 V
< 2.2 Ω
2.7 A
TYPICAL RDS(on) = 1.85 Ω
± 30V GATE TO SOURCE VOLTAGE RATING
100% AVALANCHE TESTED
REPETITIVE AVALANCHE DATA AT 100oC
LOW INTRINSIC CAPACITANCES
GATE CHARGE MINIMIZED
REDUCED THRESHOLD VOLTAGE SPREAD
3
1
DESCRIPTION
This series of POWER MOSFETS represents
the most advanced high voltage technology.
The optmized cell layout coupled with a new
proprietary edge termination concur to give
the device low RDS(on) and gate charge,
unequalled
ruggedness
and
superior
switching performance.
2
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
■
HIGH CURRENT, HIGH SPEED SWITCHING
■
SWITCH MODE POWER SUPPLIES (SMPS)
■
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Valu e
Unit
V DS
Drain-source Voltage (V GS = 0)
600
V
VDGR
Drain- gate Voltage (R GS = 20 kΩ)
600
V
V GS
Gate-source Voltage
± 30
V
o
ID
Drain Current (continuous) at T c = 25 C
2.7
A
ID
Drain Current (continuous) at T c = 100 C
o
1.8
A
17.2
A
I DM (•)
P t ot
Drain Current (pulsed)
o
Total Dissipation at T c = 25 C
Derating Factor
V ISO
Insulation W ithstand Voltage (DC)
T stg
St orage Temperature
Tj
Max. Operating Junction Temperature
35
W
0.28
W/ oC
2000
V
-65 to 150
o
C
150
o
C
(•) Pulse width limited by safe operating area
October 1997
1/5
STP4NA60FP
THERMAL DATA
R t hj-ca se
R t hj- amb
R thc- si nk
Tl
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature For Soldering Purpose
o
3.57
62.5
0.5
300
C/W
oC/W
o
C/W
o
C
Max Valu e
Unit
AVALANCHE CHARACTERISTICS
Symb ol
Parameter
I AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max, δ < 1%)
4.3
A
E AS
Single Pulse Avalanche Energy
o
(starting Tj = 25 C, ID = I AR , V DD = 50 V)
95
mJ
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
Symb ol
V (BR)DSS
I DSS
I GSS
Parameter
Drain-source
Breakdown Voltage
Test Cond ition s
I D = 250 µA
Min.
VGS = 0
Zero
Gate
Voltage V DS = Max Rating
Drain Current (V GS = 0) V DS = Max Rating
Typ .
Max.
600
Un it
V
25
250
µA
µA
± 100
nA
Typ .
Max.
Un it
3
3.75
V
1.85
2.2
Ω
o
T c = 100 C
Gate-body
Leakage V GS = ± 30 V
Current (V DS = 0)
ON (∗)
Symb ol
Parameter
Test Cond ition s
V GS(th)
Gate T hreshold Voltage V DS = VGS
R DS( on)
Static Drain-source O n
Resistance
ID(o n)
On State Drain Current
ID = 250 µA
Min.
2.25
4.3
V DS > I D(on) x R DS(on) max
V GS = 10 V
A
DYNAMIC
Symb ol
g fs (∗)
C iss
C oss
C rss
2/5
Parameter
Test Cond ition s
Forward
Transconductance
V DS > I D(on) x R DS(on) max
Input Capacitance
Output Capacitance
ReverseT ransf er
Capacitance
V DS = 25 V
f = 1 MHz
ID = 2 A
VGS = 0
Min.
Typ .
2.5
3.7
700
100
24
Max.
Un it
S
910
130
35
pF
pF
pF
STP4NA60FP
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symb ol
Parameter
Test Cond ition s
t d(on)
tr
Turn-on T ime
Rise Time
V DD
= 300 V
ID
VGS = 10 V
R G = 47 Ω
Qg
Q gs
Q gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V DD = 480 V
ID = 2 A
Min.
=
2
A
VGS = 10 V
Typ .
Max.
Un it
23
60
35
85
ns
ns
32
7
14
45
nC
nC
nC
Typ .
Max.
Un it
45
17
70
60
25
95
ns
ns
ns
Typ .
Max.
Un it
4.3
17.2
A
A
1.6
V
SWITCHING OFF
Symb ol
t r(Vof f)
tf
tc
Parameter
Off-voltage Rise Time
Fall T ime
Cross-over T ime
Test Cond ition s
Min.
V DD = 480 V I D = 4 A
R G = 47 Ω VGS = 10 V
(see test circuit, figure 5)
SOURCE DRAIN DIODE
Symb ol
Parameter
I SD
I SDM (•)
Source-drain Current
Source-drain
Current
(pulsed)
V SD (∗)
Forward O n Voltage
t rr
Q rr
I RRM
Reverse
Time
Reverse
Charge
Reverse
Current
Test Cond ition s
I SD = 4.3 A
Min.
V GS = 0
Recovery I SD = 4 A di/dt = 100 A/µs
o
T j = 150 C
V DD = 100 V
Recovery (see circuit, figure 5)
480
ns
6
µC
Recovery
25
A
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
3/5
STP4NA60FP
TO-220FP MECHANICAL DATA
mm
DIM.
MIN.
inch
TYP.
MAX.
MIN.
TYP.
MAX.
A
4.4
4.6
0.173
0.181
B
2.5
2.7
0.098
0.106
D
2.5
2.75
0.098
0.108
E
0.45
0.7
0.017
0.027
F
0.75
1
0.030
0.039
F1
1.15
1.7
0.045
0.067
F2
1.15
1.7
0.045
0.067
G
4.95
5.2
0.195
0.204
G1
2.4
2.7
0.094
0.106
H
10
10.4
0.393
0.409
L2
16
0.630
28.6
30.6
1.126
1.204
L4
9.8
10.6
0.385
0.417
L6
15.9
16.4
0.626
0.645
L7
9
9.3
0.354
0.366
Ø
3
3.2
0.118
0.126
B
D
A
E
L3
L3
L6
F
F1
L7
F2
H
G
G1
¯
1 2 3
L2
4/5
L4
STP4NA60FP
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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