STW5NA90 STH5NA90FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS PRELIMINARY DATA TYPE ST W5NA90 ST H5NA90F I ■ ■ ■ ■ ■ ■ V DSS R DS(on) ID 900 V 900 V < 2.5 Ω < 2.5 Ω 5.3 A 3.5 A TYPICAL RDS(on) = 2.1 Ω ± 30 V GATE-TO-SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC GATE CHARGE MINIMISED REDUCED THRESHOLD VOLTAGE SPREAD 3 3 2 2 1 1 TO-247 APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWITCHING ■ SWITCH MODE POWER SUPPLY (SMPS) ■ DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE ISOWATT218 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Valu e STW 5NA90 V DS Drain-source Voltage (V GS = 0) VDGR V GS Un it ST H5NA90F I 900 V Drain- gate Voltage (R GS = 20 kΩ) 900 V Gate-source Voltage ± 30 V o ID Drain Current (continuous) at Tc = 25 C 5.3 3.5 A ID o Drain Current (continuous) at Tc = 100 C 3.4 2.2 A Drain Current (pulsed) I DM (•) P t ot V ISO T stg Tj 21.2 21.2 A Total Dissipation at T c = 25 C 150 60 W Derating Factor 1.2 0.48 W/ C Insulation W ithstand Voltage (DC) 4000 o Storage T emperature Max. O perating Junction T emperature o V -65 to 150 o C 150 o C (•) Pulse width limited by safe operating area January 1998 1/6 STW5NA90-STH5NA90FI THERMAL DATA R t hj-ca se R t hj- amb R thc- si nk Tl Thermal Resistance Junction-case T O-247 ISOW ATT 218 0.83 2.08 Max Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose 30 0.1 300 o C/W o C/W C/W o C o AVALANCHE CHARACTERISTICS Symb ol Max Valu e Unit I AR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max, δ < 1%) Parameter 5.3 A E AS Single Pulse Avalanche Energy o (starting Tj = 25 C, I D = IAR , VDD = 50 V) 520 mJ ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symb ol V (BR)DSS Parameter Drain-source Breakdown Voltage Test Cond ition s I D = 250 µA Min. I DSS Zero G ate Voltage V DS = Max Rating Drain Current (VGS = 0) V DS = Max Rating I GSS Gate-body Leakage Current (V DS = 0) Typ . Max. 900 V GS = 0 Un it V T c = 100 oC V GS = ± 30 V 25 250 µA µA ±100 nA ON (∗) Symb ol Parameter Test Cond ition s ID = 250 µA V GS(th) Gate Threshold Voltage R DS( on) Static Drain-source On V GS = 10V ID = 2.5 A Resistance V GS = 10V I D = 2.5 A ID(o n) V DS = VGS Min. Typ . Max. Un it 2.25 3 3.75 V 2.1 2.5 5 Ω Ω o T c = 100 C 5.3 On State Drain Current V DS > I D(on) x R DS(on) max V GS = 10 V A DYNAMIC Symb ol g fs (∗) C iss C oss C rss 2/6 Parameter Test Cond ition s Forward Transconductance V DS > I D(on) x R DS(on) max Input Capacitance Output Capacitance Reverse T ransfer Capacitance V DS = 25 V f = 1 MHz I D = 2.5 A VGS = 0 Min. Typ . 4 6.4 1350 150 40 Max. Un it S 1900 210 60 pF pF pF STW5NA90-STH5NA90FI ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symb ol t d(on) tr (di/dt) on Qg Q gs Q gd Parameter Test Cond ition s Turn-on Time Rise Time V DD = 450 V 2.5 A R G = 4.7 Ω Turn-on Current Slope V DD = 720 V R G = 47 Ω Total Gate Charge Gate-Source Charge Gate-Drain Charge V DD = 720 V Min. ID = Typ . Max. Un it 13 12 20 19 ns ns V GS = 10 V 250 ID = 5 A V GS = 10 V ID = 5 A V GS = 10 V A/µs 60 10 26 80 nC nC nC Typ . Max. Un it 15 7 25 25 14 40 ns ns ns Typ . Max. Un it 5.3 21.3 A A SWITCHING OFF Symb ol t r(Vof f) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Cond ition s V DD = 720 V R G = 4.7 Ω Min. I D = 5A V GS = 10 V SOURCE DRAIN DIODE Symb ol I SD I SDM (•) V SD (∗) t rr Q rr I RRM Parameter Test Cond ition s Min. Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 5.3 A I SD = 5 A V DD = 30 V VGS = 0 di/dt = 100 A/µs T j = 150 o C 1.6 V 1150 ns 17.3 µC 30 A (∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % (•) Pulse width limited by safe operating area 3/6 STW5NA90-STH5NA90FI TO-247 MECHANICAL DATA mm DIM. MIN. TYP. inch MAX. MIN. TYP. MAX. A 4.7 5.3 0.185 0.209 D 2.2 2.6 0.087 0.102 E 0.4 0.8 0.016 0.031 F 1 1.4 0.039 0.055 F3 2 2.4 0.079 0.094 F4 3 3.4 0.118 0.134 G 10.9 0.429 H 15.3 15.9 0.602 0.626 L 19.7 20.3 0.776 0.779 L3 14.2 14.8 0.559 0.413 L4 34.6 1.362 L5 5.5 0.217 0.582 M 2 3 0.079 0.118 Dia 3.55 3.65 0.140 0.144 P025P 4/6 STW5NA90-STH5NA90FI ISOWATT218 MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 5.35 5.65 0.210 0.222 C 3.3 3.8 0.130 0.149 D 2.9 3.1 0.114 0.122 D1 1.88 2.08 0.074 0.081 E 0.75 1 0.029 0.039 F 1.05 1.25 0.041 0.049 G 10.8 11.2 0.425 0.441 H 15.8 16.2 0.622 0.637 L1 20.8 21.2 0.818 0.834 L2 19.1 19.9 0.752 0.783 L3 22.8 23.6 0.897 0.929 L4 40.5 42.5 1.594 1.673 L5 4.85 5.25 0.190 0.206 L6 20.25 20.75 0.797 0.817 M 3.5 3.7 0.137 0.145 N 2.1 2.3 0.082 0.090 U 4.6 0.181 L3 C D1 D A E N L2 L6 F L5 H G U M 1 2 3 L1 L4 P025C 5/6 STW5NA90-STH5NA90FI Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. 1998 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A . .. 6/6