IRF540 IRF540FI N - CHANNEL100V - 00.50Ω - 30A - TO-220/TO-220FI POWER MOSFET TYPE IRF540 IRF540F I ■ ■ ■ ■ ■ ■ ■ ■ V DSS R DS(on) ID 100 V 100 V < 0.077 Ω < 0.077 Ω 30 A 16 A TYPICAL RDS(on) = 0.050 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE APPLICATION ORIENTED CHARACTERIZATION 1 2 3 3 1 TO-220 APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWITCHING ■ SOLENOID AND RELAY DRIVERS ■ DC-DC & DC-AC CONVERTER ■ AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMP DRIVERS Etc.) 2 TO-220FI INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value IRF530 Uni t IRF 530FI Drain-source Voltage (V GS = 0) 100 V V DGR Drain- gate Voltage (R GS = 20 kΩ) 100 V V GS Gate-source Voltage V DS ± 20 ID Drain Current (continuous) at Tc = 25 o C ID o IDM (•) P t ot Viso T stg Tj Drain Current (continuous) at Tc = 100 C Drain Current (pulsed) o Total Dissipation at Tc = 25 C V 17 A 21 12 A 120 120 A 150 45 W Derating F actor 1 0.3 W/ o C Insulation Withstand Voltage (DC) - 2000 Storage T emperature Max. O perating Junction Temperature (•) Pulse width limited by safe operating area April 1998 30 V -65 to 175 o C 175 o C (1) ISD ≤30 Α, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX 1/6 IRF540/IRF540FI THERMAL DATA R t hj-ca se R t hj- amb R thc- si nk Tl Thermal Resistance Junction-case TO-220 T O220-F I 1 3.33 Max Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose 62.5 0.5 300 o C/W o C/W C/W o C o AVALANCHE CHARACTERISTICS Symb ol Parameter I AR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max E AS Single Pulse Avalanche Energy (starting Tj = 25 o C, I D = IAR , VDD = 25 V) Max Valu e Unit 30 A 200 mJ ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symb ol V (BR)DSS I DSS I GSS Parameter Drain-source Breakdown Voltage Test Cond ition s I D = 250 µA Gate-body Leakage Current (V DS = 0) Typ . Max. 100 V GS = 0 V DS = Max Rating Zero G ate Voltage Drain Current (VGS = 0) V DS = Max Rating Min. Un it V T c = 125 oC V GS = ± 20 V 1 10 µA µA ± 100 nA ON (∗) Symb ol Parameter Test Cond ition s ID = 250 µA V GS(th) Gate Threshold Voltage R DS( on) Static Drain-source On V GS = 10V Resistance ID(o n) V DS = VGS Min. Typ . Max. Un it 2 3 4 V 0.05 0.077 Ω ID = 15 A On State Drain Current V DS > I D(on) x R DS(on) max V GS = 10 V 30 A DYNAMIC Symb ol g fs (∗) C iss C oss C rss 2/6 Parameter Test Cond ition s Forward Transconductance V DS > I D(on) x R DS(on) max Input Capacitance Output Capacitance Reverse T ransfer Capacitance V DS = 25 V f = 1 MHz I D = 15 A VGS = 0 Min. Typ . 10 20 2600 350 85 Max. Un it S 3600 500 120 pF pF pF IRF540/IRF540FI ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symb ol Parameter Test Cond ition s t d(on) tr Turn-on Time Rise Time V DD = 50 V R G = 4.7 Ω Qg Q gs Q gd Total Gate Charge Gate-Source Charge Gate-Drain Charge V DD =80 V Min. I D = 15 A VGS = 10 V I D =30 A V GS = 10 V Typ . Max. Un it 20 60 28 85 ns ns 80 13 28 110 nC nC nC Typ . Max. Un it 22 25 55 30 35 75 ns ns ns Typ . Max. Un it 30 120 A A 1.5 V SWITCHING OFF Symb ol t r(Vof f) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Cond ition s Min. V DD = 80 V I D =30 A R G = 4.7 Ω V GS = 10 V SOURCE DRAIN DIODE Symb ol Parameter Test Cond ition s I SD I SDM (•) Source-drain Current Source-drain Current (pulsed) V SD (∗) Forward On Voltage I SD = 50 A Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD =30 A V DD = 30 V t rr Q rr I RRM Min. V GS = 0 di/dt = 100 A/µs o Tj = 150 C 175 ns 1.1 µC 12.5 A (∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % (•) Pulse width limited by safe operating area 3/6 IRF540/IRF540FI TO-220 MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 D1 0.107 1.27 0.050 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.203 G1 2.4 2.7 0.094 0.106 H2 10.0 10.40 0.393 0.409 14.0 0.511 0.551 L2 16.4 L4 0.645 13.0 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.2 6.6 0.244 0.260 L9 3.5 3.93 0.137 0.154 DIA. 3.75 3.85 0.147 0.151 D1 C D A E L5 H2 G G1 F1 L2 F2 F Dia. L5 L9 L7 L6 4/6 L4 P011C IRF540/IRF540FI ISOWATT220 MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 4.4 4.6 0.173 0.181 B 2.5 2.7 0.098 0.106 D 2.5 2.75 0.098 0.108 E 0.4 0.7 0.015 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.7 0.045 0.067 F2 1.15 1.7 0.045 0.067 G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 0.409 L2 16 0.630 28.6 30.6 1.126 1.204 L4 9.8 10.6 0.385 0.417 L6 15.9 16.4 0.626 0.645 L7 9 9.3 0.354 0.366 Ø 3 3.2 0.118 0.126 B D A E L3 L3 L6 F F1 L7 F2 H G G1 ¯ 1 2 3 L2 L4 P011G 5/6 IRF540/IRF540FI Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. 1998 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A . .. 6/6