STMICROELECTRONICS STE40NA60

STE40NA60
N - CHANNEL ENHANCEMENT MODE
FAST POWER MOS TRANSISTOR
PRELIMINARY DATA
TYPE
ST E40NA60
■
■
■
■
■
■
■
■
■
V DSS
R DS(on)
ID
600 V
< 0.135 Ω
40 A
TYPICAL RDS(on) = 0.12 Ω
HIGH CURRENT POWER MODULE
AVALANCHE RUGGED TECHNOLOGY
VERY LARGE SOA - LARGE PEAK POWER
CAPABILITY
EASY TO MOUNT
SAME CURRENT CAPABILITY FOR THE
TWO SOURCE TERMINALS
EXTREMELY LOW Rth (Junction to case)
VERY LOW INTERNAL PARASITIC
INDUCTANCE
ISOLATED PACKAGE UL RECOGNIZED
ISOTOP
APPLICATIONS
■
SMPS & UPS
■
MOTOR CONTROL
■
WELDING EQUIPMENT
■
OUTPUT STAGE FOR PWM, ULTRASONIC
CIRCUITS
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V DS
Parameter
Drain-source Voltage (VGS = 0)
Value
Unit
600
V
V DGR
Drain- gate Voltage (RGS = 20 kΩ)
600
V
V GS
Gate-source Voltage
± 30
V
o
ID
Drain Current (continuous) at T c = 25 C
40
A
ID
o
26
A
I DM (•)
P to t
T st g
Tj
V ISO
Drain Current (continuous) at T c = 100 C
160
A
Total Dissipation at Tc = 25 C
Drain Current (pulsed)
460
W
Derating Factor
3.6
W/ o C
o
-55 to 150
o
C
Max. Operating Junction T emperature
150
o
C
Insulation W ithhstand Voltage (AC-RMS)
2500
Storage Temperature
V
(•) Pulse width limited by safe operating area
January 1998
1/5
STE40NA60
THERMAL DATA
R t hj-ca se
R thc -h
Thermal Resistance Junction-case
Thermal Resistance Case-heatsink W ith Conductive
Grease Applied
Max
0.27
o
C/W
Max
0.05
o
C/W
AVALANCHE CHARACTERISTICS
Symb ol
Parameter
I AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max, δ < 1%)
E AS
Single Pulse Avalanche Energy
o
(starting Tj = 25 C, I D = IAR , VDD = 50 V)
Max Valu e
Unit
20
A
3000
mJ
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
Symb ol
V (BR)DSS
I DSS
I GSS
Parameter
Drain-source
Breakdown Voltage
Test Cond ition s
I D = 500 µA
Typ .
Max.
900
V GS = 0
V DS = Max Rating
Zero G ate Voltage
Drain Current (VGS = 0) V DS =0.8x Max Rating
Gate-body Leakage
Current (V DS = 0)
Min.
Un it
V
o
Tc = 125 C
V GS = ± 30 V
250
1000
µA
µA
± 200
nA
ON (∗)
Symb ol
Parameter
Test Cond ition s
V GS(th)
Gate Threshold
Voltage
V DS = VGS
ID = 1mA
R DS( on)
Static Drain-source On V GS = 10V
Resistance
ID = 20 A
ID(o n)
On State Drain Current V DS > I D(on) x R DS(on) max
V GS = 10 V
Min.
Typ .
Max.
Un it
2.25
3
3.75
V
0.12
0.135
Ω
40
A
DYNAMIC
Symb ol
g fs (∗)
C iss
C oss
C rss
2/5
Parameter
Test Cond ition s
Forward
Transconductance
V DS > I D(on) x R DS(on) max
Input Capacitance
Output Capacitance
Reverse T ransfer
Capacitance
V DS = 25 V
f = 1.0 MHz
Min.
I D = 20 A
VGS = 0
Typ .
Max.
20
Un it
S
13000
1500
350
16000
1700
450
pF
pF
pF
STE40NA60
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symb ol
Typ .
Max.
Un it
t d(on)
tr
Turn-on Time
Rise Time
Parameter
V DD = 300 V
R G = 4.7 Ω
Test Cond ition s
I D = 20 A
VGS = 10 V
Min.
55
95
75
125
ns
ns
Qg
Q gs
Q gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V DD = 480 V
I D = 40 A VGS = 10 V
460
48
217
600
nC
nC
nC
Typ .
Max.
Un it
95
30
140
125
40
180
ns
ns
ns
Typ .
Max.
Un it
40
160
A
A
1.6
V
SWITCHING OFF
Symb ol
t r(Vof f)
tf
tc
Parameter
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Cond ition s
V DD = 480 V
R G = 4.7 Ω
Min.
I D = 40 A
V GS = 10 V
SOURCE DRAIN DIODE
Symb ol
Parameter
Test Cond ition s
I SD
I SDM (•)
Source-drain Current
Source-drain Current
(pulsed)
V SD (∗)
Forward On Voltage
I SD = 40 A
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
I SD = 40 A di/dt = 100 A/µs
o
Tj = 150 C
V R = 100 V
t rr
Q rr
I RRM
Min.
V GS = 0
1050
ns
31.5
µC
60
A
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
3/5
STE40NA60
ISOTOP MECHANICAL DATA
mm
DIM.
MIN.
TYP.
inch
MAX.
MIN.
TYP.
MAX.
A
11.8
12.2
0.466
0.480
B
8.9
9.1
0.350
0.358
C
1.95
2.05
0.076
0.080
D
0.75
0.85
0.029
0.033
E
12.6
12.8
0.496
0.503
F
25.15
25.5
0.990
1.003
G
31.5
31.7
1.240
1.248
H
4
J
4.1
4.3
0.161
0.169
K
14.9
15.1
0.586
0.594
L
30.1
30.3
1.185
1.193
M
37.8
38.2
1.488
1.503
N
4
O
7.8
0.157
0.157
8.2
0.307
0.322
A
G
B
O
H
J
C
K
L
M
4/5
F
E
D
N
STE40NA60
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
 1998 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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