STPAC02F1 ® IPAD TM RF DETECTOR FOR POWER AMPLIFIER CONTROL WITH INTERNAL TEMPERATURE COMPENSATION MAIN PRODUCT CHARACTERISTICS ■ ■ ■ ■ ■ ■ ■ 0.8 to 2.5GHz frequency range Detection diode voltage drop compensation Temperature compensation Fast response time Low Power consumption Chip Scale device Low parasitic impedance DESCRIPTION The STPAC02F1 is an integrated RF detector for power control chain. It has been developed to convert the RF signal coming from the external coupler into a DC signal usable by the mobile digital stage. It is based on the use of two similar diodes, one assuming the signal detection while the second one is used to compensate the ambient temperature effect. A biasing stage suppresses the detection diode drop voltage effect. The use of the IPAD technology allows the RF front-end designer to save PCB area and to drastically suppress the parasitic inductances of the package. Target applications are cellular phones and PDA using GSM, DCS, PCS, AMPS, TDMA , CDMA and 800MHz to 2100MHz frequency ranges. Flip-Chip package PIN CONFIGURATION (ball side) 3 2 1 OUT Not used GND GND GND B RFin GND VBias C A BENEFITS ■ The use of IPAD technology allows the RF front-end designer to save PCB area and to drastically suppress the parasitic inductances. FUNCTIONAL DIAGRAM Antenna Coupler Bias voltage VBIAS RF input DC output OUT Low pass filter RF detector Thermal compensation STPAC02F1 GND TM : IPAD is a trademark of STMicroelectronics. October 2003 - Ed: 1 1/5 STPAC02F1 ABSOLUTE RATINGS (Tamb = 25°C) Symbol Value Unit Bias voltage 5 V PRF RF power at the RF input 20 dBm FOP Operating frequency range 0.8 to 2.5 GHz VPP ESD level as per MIL-STD 883E method 3015.7 notice 8 (HBM) 250 V TOP Operating temperature range -30 to +85 °C TSTG Storage temperature range -55 to 150 °C VBIAS Parameter and test conditions ELECTRICAL CHARACTERISTICS (Tamb = 25°C) PARAMETERS RELATED TO BIAS VOLTAGE Symbol Parameter VBIAS Operating bias voltage IBIAS Bias current Test conditions Min. Typ. Max. Unit 2.3 2.8 3.3 V 1.1 1.6 mA VBIAS = 3.3 V PARAMETERS RELATED TO DETECTION FUNCTION (VBIAS = 2.8 V, DC output load = 200 kΩ) Symbol VDCout ∆VDCout Parameter DC output voltage (see fig. 1) Test conditions Min. Typ. Max. Unit F = 1.75 GHz, PRF = 10 dBm 0.63 0.69 0.75 V F = 1.75 GHz, PRF = -20 dBm 0.20 0.22 0.24 F = 0.9 GHz, PRF = 10 dBm 0.69 0.75 0.83 F = 0.9 GHz, PRF = -20 dBm 0.20 0.22 0.24 DC output voltage variation 2.3V < VBIAS < 3.3V, (see fig. 1) F = 1.85 GHz, PRF = 10 dBm 100 mV PARAMETERS RELATED TO RESPONSE TIME (VBIAS = 2.8 V, DC output load = 200 kΩ) Symbol 2/5 Parameter Test conditions Min. Typ. tVBIAS Delay at VBIAS ON (see fig. 3) VBIAS from 0 to 3V tRFon Delay at RF ON (see fig. 2) PRF from 0 to 20dBm 0.2 tRFoff Delay at RF OFF (see fig. 2) PRF from 20 to 0dBm 0.2 1 Max. Unit V STPAC02F1 Fig. 1: VDC output measurement circuit and temperature compensation measurement. Fig. 2: RF Power ON/OFF response time set-up. Bias voltage Climatic Chamber -30ºC < T amb < +85°C RF power amplifier RF in RF Generator RF in RF Generator RF power amplifier STPAC02 STPAC02 OUT OUT DC out voltage RF scope RF in Bias voltage Power supply RLOAD Out Fig. 3: Power supply turn ON response time. Fig. 4: Temperature sensitivity versus RF Power in (VBIAS = 2.8V, Freq. = 900 MHz). Delta VOUT (mV/°C) RF power amplifier 0.3 RF in RF Generator OUT STPAC02 0.2 Bias voltage RF scope 0.1 OUT t Pon 0.0 -15 Bias voltage -10 -5 0 5 10 15 Pin (dBm) Fig. 5: STPAC02 Output voltage vs. wide RF power range. Fig. 6: Power detector sensitivity vs. wide RF power range. Sensitivity(mV/dB) Vout @ 25ºC (Vdc) 140 2 900MHz 1750MHz 1.8 1.6 120 1.4 100 1.2 80 1 60 0.8 40 0.6 0.4 20 0.2 0 0 -20 -15 -10 -5 0 Pin (dBm) 5 10 15 20 -20 -15 -10 -5 0 5 10 15 20 Pin (dBm) 3/5 STPAC02F1 Fig. 7: STPAC02 Output voltage at Low RF power. Fig. 8: Power detector sensitivity at low RF power. Sensitivity(mV/dB) Vout @ 25ºC (Vdc) 0.4 22 900MHz 1750MHz 0.35 17 0.3 12 0.25 7 2 0.2 -10 -9 -8 -7 -6 -5 -4 -3 -2 -1 0 -10 -8 -6 -4 -2 0 Pin (dBm) Pin (dBm) PACKAGE MECHANICAL DATA 500µm ± 50 650µm ± 65 1.57mm ± 50µm 500µm ± 50 315µm ± 50 1.57mm ± 50µm FOOT PRINT RECOMMENDATIONS MARKING 365 240 365 Dot, ST logo xxx = marking yww = datecode (y = year ww = week) Copper pad Diameter : 250µm recommended , 300µm max E Solder stencil opening : 330µm 220 All dimensions in µm 4/5 x x x y ww 40 Solder mask opening recommendation : 340µm min for 300µm copper pad diameter STPAC02F1 FLIP-CHIP TAPE AND REEL SPECIFICATION Dot identifying Pin A1 location 1.75 +/- 0.1 Ø 1.5 +/- 0.1 4 +/- 0.1 3.5 +/- 0.1 ST E xxx yww ST E xxx yww ST E xxx yww 8 +/- 0.3 0.73 +/- 0.05 4 +/- 0.1 User direction of unreeling All dimensions in mm OTHER INFORMATION Ordering code Marking Package Weight Base qty Delivery mode STPAC02F1 RBT Flip-Chip 3.3 mg 5000 Tape & reel Note: More packing informations are available in the application notes: AN1235: ''Flip-Chip: Package description and recommandations for use'' AN1751: "EMI Filters: Recommendations and measurements" Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. © 2003 STMicroelectronics - All rights reserved. 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