STMICROELECTRONICS STPS120M

STPS120M
®
POWER SCHOTTKY RECTIFIER
Table 1: Main Product Characteristics
IF(AV)
1A
VRRM
20 V
Tj (max)
150°C
VF(max)
0.41 V
A
C
FEATURES AND BENEFITS
■
■
■
■
■
■
Very small conduction losses
Negligible switching losses
Extremely fast switching
Low forward voltage drop for higher efficiency
and extented battery life
Low thermal resistance
Avalanche capability specified
DESCRIPTION
STmite
(DO216-AA)
Table 2: Order Code
Part Number
STPS120M
Marking
120
Single Schottky rectifier suited for switch mode
power supplies and high frequency DC to DC
converters.
Packaged in STmite, this device is intended for
use in low voltage, high frequency inverters, free
wheeling and polarity protection applications. Due
to the small size of the package this device fits
battery powered equipment (cellular, notebook,
PDA’s, printers) as well chargers and PCMCIA
cards.
Table 3: Absolute Ratings (limiting values)
Symbol
Parameter
VRRM Repetitive peak reverse voltage
IF(RMS) RMS forward voltage
Value
20
Unit
V
2
A
IF(AV)
Average forward current
Tc = 140°C δ = 0.5
1
A
IFSM
Surge non repetitive forward current
tp = 8.3 ms sinusoidal
50
A
PARM
Repetitive peak avalanche power
tp = 1µs Tj = 25°C
Tstg
Tj
dV/dt
Storage temperature range
Maximum operating junction temperature *
Critical rate of rise of reverse voltage (rated VR, Tj = 25°C)
1400
W
-65 to + 150
°C
150
°C
10000
V/µs
1
dPtot
* : --------------- > -------------------------- thermal runaway condition for a diode on its own heatsink
dTj
Rth ( j – a )
September 2004
REV. 3
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STPS120M
Table 4: Thermal Resistance
Symbol
Parameter
Value
Unit
Rth(j-c)* Junction to case
20
°C/W
Rth(j-l)*
250
°C/W
Junction to ambient
* Mounted with minimum recommended pad size, PC board FR4.
Table 5: Static Electrical Characteristics
Symbol
Parameter
Tests conditions
Tj = 25°C
Tj = 100°C
IR *
Reverse leakage current
Tj = 25°C
Min.
VR = VRRM
VR = 10V
Tj = 100°C
Tj = 25°C
VR = 5V
Tj = 100°C
Tj = 25°C
VF *
Tj = 100°C
Forward voltage drop
Tj = 25°C
Tj = 100°C
IF = 1A
IF = 3A
Typ
Max.
1.3
3.9
275
850
0.6
2.0
145
450
0.4
1.0
105
300
0.44
0.49
0.36
0.41
0.48
0.54
0.42
0.48
Unit
µA
V
* tp = 380 µs, δ < 2%
Pulse test:
2
To evaluate the conduction losses use the following equation: P = 0.34 x IF(AV) + 0.07 IF (RMS)
Figure 1: Conduction losses versus average
current
Figure 2: Average forward current versus
ambient temperature (δ = 0.5)
PF(AV)(W)
IF(AV)(A)
0.6
1.2
δ = 0.2
δ = 0.1
1.1
δ = 0.5
0.5
Rth(j-a)=Rth(j-c)
1.0
δ = 0.05
0.9
0.4
0.8
δ=1
0.7
0.3
Rth(j-a)=270°C/W
0.6
0.5
0.4
0.2
0.3
T
T
0.2
0.1
IF(AV)(A)
δ=tp/T
0.0
0.0
2/6
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0.1
tp
δ=tp/T
0.0
1.1
1.2
0
Tamb(°C)
tp
25
50
75
100
125
150
STPS120M
Figure 3: Normalized avalanche
derating versus pulse duration
power
Figure 4: Normalized avalanche
derating versus junction temperature
PARM(tp)
PARM(1µs)
power
PARM(tp)
PARM(25°C)
1
1.2
1
0.1
0.8
0.6
0.4
0.01
0.2
Tj(°C)
tp(µs)
0.001
0.01
0.1
1
0
10
100
25
1000
Figure 5: Non repetitive surge peak forward
current versus overload duration (maximum
values)
50
75
100
125
150
Figure 6: Relative variation of thermal
impedance junction to ambient versus pulse
duration
IM(A)
Zth(j-c)/Rth(j-c)
22
1.0
20
0.9
18
0.8
16
0.7
14
0.6
TC=25°C
12
δ = 0.5
0.5
10
TC=75°C
0.4
8
0.3
6
TC=125°C
4
0.2
IM
2
t
0.1
t(s)
δ=0.5
0
1.E-03
1.E-02
1.E-01
1.E+00
Figure 7: Reverse leakage current versus
reverse voltage applied (typical values)
δ = 0.2
T
δ = 0.1
Single pulse
0.0
1.E-04
tp(s)
1.E-03
δ=tp/T
1.E-02
tp
1.E-01
Figure 8: Junction capacitance versus reverse
voltage applied (typical values)
IR(mA)
C(pF)
1.E+01
1000
F=1MHz
VOSC=30mVRMS
Tj=25°C
Tj=150°C
1.E+00
Tj=125°C
1.E-01
Tj=100°C
100
1.E-02
Tj=75°C
Tj=50°C
1.E-03
Tj=25°C
VR(V)
VR(V)
10
1.E-04
0
2
4
6
8
10
12
14
16
18
20
1
10
100
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STPS120M
Figure 9: Forward voltage drop versus forward
current (low level)
Figure 10: Forward voltage drop versus
forward current (high level)
IFM(A)
IFM(A)
100.0
2.0
1.8
1.6
Tj=100°C
(maximum values)
Tj=100°C
(maximum values)
1.4
10.0
1.2
Tj=100°C
(typical values)
1.0
Tj=100°C
(typical values)
0.8
Tj=25°C
(maximum values)
1.0
0.6
Tj=25°C
(maximum values)
0.4
0.2
VFM(V)
VFM(V)
0.1
0.0
0.0
0.1
0.2
0.3
0.4
0.5
0.6
Figure 11: Thermal resistance junction to
ambient versus copper surface under tab
(epoxy printed board FR4, Cu = 35µm, typical
values)
Rth(j-a)(°C/W)
300
250
200
150
100
50
S(cm²)
0
0.0
4/6
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
STPS120M
Figure 12: STmite Package Mechanical Data
DIMENSIONS
REF.
Millimeters
Inches
Min. Typ. Max. Min. Typ.
A
0.85 1.00 1.15 0.033 0.039
A1 -0.05
0.05 -0.002
b
0.40
0.65 0.016
b2
0.70
1.00 0.027
c
0.10
0.25 0.004
D
1.75 1.90 2.05 0.069 0.007
E
1.75 1.90 2.05 0.069 0.007
H
3.60 3.75 3.90 0.142 0.148
L
0.50 0.63 0.80 0.020 0.025
L2
1.20 1.35 1.50 0.047 0.053
L3
0.50
0.019
ref
ref
R
0.07
0.003
R1
0.07
0.003
L3
D
b2
b
H
L2
L
E
R
C
A
A1
0° to 6°
R1
Max.
0.045
0.002
0.025
0.039
0.010
0.081
0.081
0.154
0.031
0.059
Figure 13: Foot Print Dimensions (in millimeters)
1.82
1.38
2.03
0.75
1.10
0.50
0.71
Table 6: Ordering Information
Ordering type
STPS120M
Marking
120
Package
STmite
Weight
15.5 mg
Base qty
12000
Delivery mode
Tape & reel
Table 7: Revision History
Date
Revision
Jul-2003
2A
13-Sep-2004
3
Description of Changes
Last update.
STmite package dimensions reference A1 change: from
blank (min) to -0.05mm and from 0.10 (max) to 0.05mm.
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STPS120M
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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All other names are the property of their respective owners
© 2004 STMicroelectronics - All rights reserved
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