STMICROELECTRONICS STPS15L30CB

STPS15L30CB
®
LOW DROP POWER SCHOTTKY RECTIFIER
MAIN PRODUCTS CHARACTERISTICS
IF(AV)
2 x 7.5 A
VRRM
30 V
Tj (max)
150 °C
VF (max)
0.39 V
A1
K
A2
FEATURES AND BENEFITS
VERY SMALL CONDUCTION LOSSES
NEGLIGIBLE SWITCHING LOSSES
EXTREMELY FAST SWITCHING
LOW FORWARD VOLTAGE DROP
HIGH AVALANCHE CAPABILITY
LOW THERMAL RESISTANCE
AVALANCHE CAPABILITY SPECIFIED
K
■
■
■
A2
■
A1
■
■
DPAK
■
DESCRIPTION
Dual center tab Schottky rectifier suited for switch
Mode Power Supply and high frequency DC to DC
converters.
Package in DPAK, this device is intended for use
in low voltage, high frequency inverters,
free-wheeling and polarity protection applications.
ABSOLUTE RATINGS (limiting values, per diode)
Symbol
VRRM
IF(RMS)
IF(AV)
Parameter
Repetitive peak reverse voltage
RMS forward current
Average forward current
Tc = 140°C
δ = 0.5
Value
30
Unit
V
10
A
Per diode
7.5
Per device
15
A
IFSM
Surge non repetitive forward current
tp = 10 ms sinusoidal
75
A
IRRM
Peak repetitive reverse current
tp=2 µs square F=1kHz
1
A
PARM
Repetitive peak avalanche power
tp = 1µs
2800
W
- 65 to + 175
°C
150
°C
10000
V/µs
Tstg
Tj
dV/dt
* :
Storage temperature range
Tj = 25°C
Maximum operating junction temperature *
Critical rate of rise reverse voltage
dPtot
1
thermal runaway condition for a diode on its own heatsink
<
dTj
Rth( j − a )
July 2003 - Ed : 2A
1/5
STPS15L30CB
THERMAL RESISTANCES
Symbol
Parameter
Rth(j-c)
Junction to case
Rth(c)
Coupling
Per diode
Total
Value
Unit
4
2.4
°C/W
0.7
When the diodes 1 and 2 are used simultaneously :
∆ Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Symbol
Parameter
IR *
Reverse leakage current
Tests Conditions
Tj = 25°C
Forward voltage drop
70
Tj = 25°C
IF = 7.5 A
Tj = 125°C
IF = 7.5 A
Tj = 25°C
IF = 12 A
Tj = 125°C
IF = 12 A
Tj = 25°C
IF = 15 A
Tj = 125°C
IF = 15 A
Pulse test : * tp = 380 µs, δ < 2%
To evaluate the conduction losses use the following equation :
P = 0.27 x IF(AV) + 0.016 IF2(RMS)
2/5
Typ.
VR = VRRM
Tj = 125°C
VF *
Min.
0.34
Max.
Unit
1
mA
140
mA
0.48
V
0.39
0.53
0.40
0.47
0.57
0.44
0.51
STPS15L30CB
Fig. 1: Conduction losses versus average current.
Fig. 2: Average forward current versus ambient
temperature (δ = 0.5).
PF(av)(W)
IF(av)(A)
9
4.5
δ = 0.5
4.0
8
δ = 0.2
δ = 0.1
3.5
7
δ=1
δ = 0.05
3.0
Rth(j-a)=Rth(j-c)
6
2.5
5
2.0
4
1.5
Rth(j-a)=70°C/W
3
T
1.0
0.5
1
IF(av)(A)
δ=tp/T
0.0
0
1
2
3
4
5
T
2
6
7
8
δ=tp/T
tp
0
9
10
Fig. 3: Normalized avalanche power derating
versus pulse duration.
0
25
50
75
100
125
150
Fig. 4: Normalized avalanche power derating
versus junction temperature.
PARM(tp)
PARM(1µs)
1
Tamb(°C)
tp
1.2
PARM(tp)
PARM(25°C)
1
0.1
0.8
0.6
0.4
0.01
0.2
Tj(°C)
tp(µs)
0.001
0.01
0.1
1
0
10
100
0
1000
Fig. 5: Non repetitive surge peak forward current
versus overload duration (maximum values).
25
50
75
100
125
150
Fig. 6: Relative variation of thermal impedance
junction to case versus pulse duration.
Zth(j-c)/Rth(j-c)
IM(A)
100
1.0
90
0.9
80
0.8
70
0.7
60
0.6
Tc=25°C
50
δ = 0.5
0.5
Tc=75°C
40
0.4
δ = 0.2
30
0.3
δ = 0.1
Tc=125°C
20
T
0.2
IM
Single pulse
10
t
0.1
t(s)
δ=0.5
0
1.E-03
tp(s)
δ=tp/T
0.0
1.E-02
1.E-01
1.E+00
1.E-03
1.E-02
1.E-01
tp
1.E+00
3/5
STPS15L30CB
Fig. 7: Reverse leakage current versus reverse
voltage applied (typical values).
Fig. 8: Junction capacitance versus reverse voltage
applied (typical values).
IR(mA)
C(nF)
1.E+03
10.0
F=1MHz
Vosc=30mV
Tj=25°C
Tj=150°C
1.E+02
Tj=125°C
1.E+01
Tj=100°C
1.0
Tj=75°C
1.E+00
Tj=50°C
1.E-01
Tj=25°C
VR(V)
VR(V)
1.E-02
0.1
0
5
10
15
20
25
30
Fig. 9: Forward voltage drop versus forward current.
1
10
100
Fig. 10: Thermal resistance junction to ambient versus copper surface under tab (epoxy printed board
FR4, Cu = 35µm).
IFM(A)
Rth(j-a)(°C/W)
100
100
90
80
Tj=125°C
(Maximum values)
70
60
Tj=125°C
(Typical values)
10
50
40
Tj=25°C
(Maximum values)
30
20
VFM(V)
S(cm²)
10
1
0
0.0
4/5
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
10
12
14
16
18
20
STPS15L30CB
PACKAGE MECHANICAL DATA
DPAK
DIMENSIONS
REF.
Millimeters
Inches
A
A1
A2
B
B2
C
C2
D
E
G
H
L2
L4
V2
Min.
Max
2.20
2.40
0.90
1.10
0.03
0.23
0.64
0.90
5.20
5.40
0.45
0.60
0.48
0.60
6.00
6.20
6.40
6.60
4.40
4.60
9.35
10.10
0.80 typ.
0.60
1.00
0°
8°
Min.
Max.
0.086
0.094
0.035
0.043
0.001
0.009
0.025
0.035
0.204
0.212
0.017
0.023
0.018
0.023
0.236
0.244
0.251
0.259
0.173
0.181
0.368
0.397
0.031 typ.
0.023
0.039
0°
8°
FOOTPRINT (dimensions in mm)
6.7
6.7
3
3
1.6
1.6
2.3
■
2.3
Ordering type
Marking
Package
Weight
Base qty
Delivery mode
STPS15L30CB
S15L30C
DPAK
0.30 g
75
Tube
STPS15L30CB-TR
S15L30C
DPAK
0.30 g
2500
Tape & reel
EPOXY MEETS UL94,V0
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written
approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
© 2003 STMicroelectronics - Printed in Italy - All rights reserved.
STMicroelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China - Finland - France - Germany
Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore
Spain - Sweden - Switzerland - United Kingdom - United States.
http://www.st.com
5/5