STMICROELECTRONICS STPS20170CFP

STPS20170C
®
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
Table 1: Main Product Characteristics
IF(AV)
2 x 10 A
VRRM
170 V
Tj
175°C
VF(max)
0.75 V
A1
K
A2
K
K
Features
■
■
■
High reverse voltage
High junction temperature capability
Avalanche specification with derating curves
A2
A2
A1
K
A1
TO-220AB
STPS20170CT
D2PAK
STPS20170CG
Benefits
■
K
Can challenge bipolar ultrafast diodes with
better dynamic characteristics.
Description
Dual center tap Schottky rectifier diode suited for
high frequency switched mode power supplies.
A2
K
A1
TO-220FPAB
STPS20170CFP
A1
K
A2
I2PAK
STPS20170CR
Table 2: Order Codes
June 2005
Part Numbers
Marking
STPS20170CT
STPS20170CT
STPS20170CFP
STPS20170CFP
STPS20170CR
STPS20170CR
STPS20170CG
STPS20170CG
STPS20170CG-TR
STPS20170CG
REV. 2
1/8
STPS20170C
Table 3: Absolute Ratings (limiting values, per diode)
Symbol
VRRM
IF(RMS)
Parameter
Value
Unit
Repetitive peak reverse voltage
170
V
RMS forward voltage
30
A
TO-220AB /
IF(AV)
Tc = 155°C
D2PAK / I2PAK
Average forward current
δ = 0.5
Tc = 135°C
TO-220FPAB
Per diode
Per device
10
20
Per diode
Per device
10
20
A
IFSM
Surge non repetitive forward current
tp = 10ms sinusoidal
180
A
PARM
Repetitive peak avalanche power
tp = 1µs Tj = 25°C
6700
W
-65 to + 175
°C
175
°C
10000
V/µs
Tstg
Storage temperature range
Tj
Maximum operating junction temperature *
dV/dt
dPtot
* : --------------dTj
<
Critical rate of rise of reverse voltage
1
-------------------------- thermal runaway condition for a diode on its own heatsink
Rth ( j – a )
Table 4: Thermal Parameters
Symbol
Rth(j-c)
Parameter
Value
TO-220AB / D2PAK / I2PAK
Per diode
Total
2.2
1.3
TO-220FPAB
Per diode
Total
4.5
3.5
TO-220AB / D2PAK / I2PAK
Coupling
0.3
Junction to case
Rth(c)
TO-220FPAB
Unit
°C/W
2.5
When the diodes 1 and 2 are used simultaneously:
∆ Tj(diode 1) = P(diode 1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)
Table 5: Static Electrical Characteristics (per diode)
Symbol
Parameter
IR *
Reverse leakage current
Tests conditions
Tj = 25°C
Tj = 125°C
Tj = 25°C
VF **
Forward voltage drop
Tj = 125°C
Tj = 25°C
Tj = 125°C
Pulse test:
Min.
VR = VRRM
Max.
Unit
15
µA
15
mA
0.90
IF = 10A
0.69
0.75
0.99
IF = 20A
0.79
* tp = 5 ms, δ < 2%
** tp = 380 µs, δ < 2%
2
To evaluate the conduction losses use the following equation: P = 0.64 x IF(AV) + 0.011 IF (RMS)
2/8
Typ
0.86
V
STPS20170C
Figure 1: Average forward power dissipation
versus average forward current (per diode)
Figure 2: Average forward current versus
ambient temperature (δ = 0.5, per diode)
PF(AV)(W)
IF(AV)(A)
10
δ = 0.1
δ = 0.05
9
12
δ = 0.2
δ = 0.5
Rth(j-a)=Rth(j-c) (TO-220AB, I2PAK and D2PAK)
11
10
8
9
7
δ=1
Rth(j-a)=Rth(j-c) (TO-220FPAB)
8
6
7
5
6
4
5
Rth(j-a)=15°C/W
4
3
T
2
T
3
2
1
IF(AV)(A)
δ=tp/T
0
δ=tp/T
1
tp
tp
Tamb(°C)
0
0
1
2
3
4
5
6
7
8
9
10
Figure 3: Normalized avalanche
derating versus pulse duration
11
12
power
0
25
50
75
100
125
150
Figure 4: Normalized avalanche
derating versus junction temperature
PARM(tp)
PARM(1µs)
175
power
PARM(tp)
PARM(25°C)
1
1.2
1
0.1
0.8
0.6
0.4
0.01
0.2
Tj(°C)
tp(µs)
0.001
0.01
0.1
0
10
1
100
25
1000
Figure 5: Non repetitive surge peak forward
current versus overload duration (maximum
values, per diode) (TO-220AB, D2PAK, I2PAK)
50
75
100
125
150
Figure 6: Non repetitive surge peak forward
current versus overload duration (maximum
values, per diode) (TO-220FPAB)
IM(A)
IM(A)
150
100
90
125
80
70
100
TC=50°C
75
TC=50°C
50
TC=75°C
50
40
TC=75°C
30
TC=125°C
IM
25
t
20
10
t(s)
δ=0.5
0
1.E-03
60
TC=125°C
IM
t
t(s)
δ=0.5
0
1.E-02
1.E-01
1.E+00
1.E-03
1.E-02
1.E-01
1.E+00
3/8
STPS20170C
Figure 7: Relative variation of thermal
impedance junction to case versus pulse
duration
Figure 8: Reverse leakage current versus
reverse voltage applied (typical values, per
diode)
Zth(j-c)/Rth(j-c)
IR(µA)
1.0
1.E+05
Tj=175°C
0.9
1.E+04
0.8
Tj=150°C
0.7
Tj=125°C
1.E+03
0.6
2
2
(TO-220AB, I PAK and D PAK)
0.5
1.E+02
Tj=100°C
0.4
1.E+01
0.3
T
(TO-220FPAB)
0.2
1.E+00
Single pulse
0.1
tp(s)
δ=tp/T
Tj=25°C
tp
VR(V)
0.0
1.E-01
1.E-03
1.E-02
1.E-01
1.E+00
Figure 9: Junction capacitance versus reverse
voltage applied (typical values, per diode)
0
25
50
75
100
125
150
175
Figure 10: Forward voltage drop versus
forward current (per diode)
IFM(A)
C(pF)
100.0
1000
F=1MHz
VOSC=30mVRMS
Tj=25°C
Tj=125°C
(maximum values)
10.0
Tj=25°C
(maximum values)
Tj=125°C
(typical values)
100
1.0
VFM(V)
VR(V)
0.1
10
1
10
100
1000
Figure 11: Thermal resistance junction to ambient versus copper surface under tab (epoxy
printed board FR4, Cu = 35µm) (D2PAK)
Rth(j-a)(°C/W)
80
70
60
50
40
30
20
10
S(cm²)
0
0
4/8
5
10
15
20
25
30
35
40
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
STPS20170C
Figure 12: D2PAK Package Mechanical Data
REF.
A
E
C2
L2
D
L
L3
A1
B2
R
C
B
G
A2
M
*
V2
* FLAT ZONE NO LESS THAN 2mm
A
A1
A2
B
B2
C
C2
D
E
G
L
L2
L3
M
R
V2
DIMENSIONS
Millimeters
Inches
Min.
Max.
Min.
Max.
4.40
4.60
0.173
0.181
2.49
2.69
0.098
0.106
0.03
0.23
0.001
0.009
0.70
0.93
0.027
0.037
1.14
1.70
0.045
0.067
0.45
0.60
0.017
0.024
1.23
1.36
0.048
0.054
8.95
9.35
0.352
0.368
10.00
10.40
0.393
0.409
4.88
5.28
0.192
0.208
15.00
15.85
0.590
0.624
1.27
1.40
0.050
0.055
1.40
1.75
0.055
0.069
2.40
3.20
0.094
0.126
0.40 typ.
0.016 typ.
0°
8°
0°
8°
Figure 13: Foot Print Dimensions (in millimeters)
16.90
10.30
5.08
1.30
3.70
8.90
5/8
STPS20170C
Figure 14: I2PAK Package Mechanical Data
DIMENSIONS
REF.
c2
L2
D
L1
A1
b1
L
b
c
e
e1
Inches
Min.
Max.
Min.
Max.
A
4.40
4.60
0.173
0.181
A1
2.40
2.72
0.094
0.107
b
0.61
0.88
0.024
0.035
b1
1.14
1.70
0.044
0.067
c
0.49
0.70
0.019
0.028
c2
1.23
1.32
0.048
0.052
D
8.95
9.35
0.352
0.368
e
2.40
2.70
0.094
0.106
e1
4.95
5.15
0.195
0.203
E
10
10.40
0.394
0.409
L
13
14
0.512
0.551
L1
3.50
3.93
0.138
0.155
L2
1.27
1.40
0.050
0.055
A
E
Millimeters
Figure 15: TO-220FPAB Package Mechanical Data
REF.
A
B
H
Dia
L6
L7
L2
L3
L5
F1
L4
F2
F
G1
G
6/8
D
E
A
B
D
E
F
F1
F2
G
G1
H
L2
L3
L4
L5
L6
L7
Dia.
DIMENSIONS
Millimeters
Inches
Min.
Max.
Min.
Max.
4.4
4.6
0.173
0.181
2.5
2.7
0.098
0.106
2.5
2.75
0.098
0.108
0.45
0.70
0.018
0.027
0.75
1
0.030
0.039
1.15
1.70
0.045
0.067
1.15
1.70
0.045
0.067
4.95
5.20
0.195
0.205
2.4
2.7
0.094
0.106
10
10.4
0.393
0.409
16 Typ.
0.63 Typ.
28.6
30.6
1.126
1.205
9.8
10.6
0.386
0.417
2.9
3.6
0.114
0.142
15.9
16.4
0.626
0.646
9.00
9.30
0.354
0.366
3.00
3.20
0.118
0.126
STPS20170C
Figure 16: TO-220AB Package Mechanical Data
REF.
A
C
D
E
F
F1
F2
G
G1
H2
L2
L4
L5
L6
L7
L9
M
Diam.
A
H2
Dia
C
L5
L7
L6
L2
F2
F1
D
L9
L4
F
M
G1
E
G
DIMENSIONS
Millimeters
Inches
Min.
Max.
Min.
Max.
4.40
4.60
0.173
0.181
1.23
1.32
0.048
0.051
2.40
2.72
0.094
0.107
0.49
0.70
0.019
0.027
0.61
0.88
0.024
0.034
1.14
1.70
0.044
0.066
1.14
1.70
0.044
0.066
4.95
5.15
0.194
0.202
2.40
2.70
0.094
0.106
10
10.40
0.393
0.409
16.4 typ.
0.645 typ.
13
14
0.511
0.551
2.65
2.95
0.104
0.116
15.25
15.75
0.600
0.620
6.20
6.60
0.244
0.259
3.50
3.93
0.137
0.154
2.6 typ.
0.102 typ.
3.75
3.85
0.147
0.151
Table 6: Ordering Information
■
■
■
■
Ordering type
Marking
Package
Weight
Base qty
Delivery
mode
STPS20170CT
STPS20170CT
TO-220AB
2.20 g
50
Tube
STPS20170CFP
STPS20170CFP
TO-220FPAB
2g
50
Tube
STPS20170CR
STPS20170CR
I PAK
1.49 g
50
Tube
STPS20170CG
STPS20170CG
Tube
STPS20170CG
1.48 g
50
STPS20170CG-TR
D2PAK
1000
Tape & reel
2
Epoxy meets UL94, V0
Cooling method: by conduction (C)
Recommended torque value: 0.8 m.N.
Maximum torque value: 1.0 m.N.
Table 7: Revision History
Date
Revision
Description of Changes
Mar-2004
1
First issue.
28-Jul-2005
2
TO-220FPAB, I2PAK and D2PAK packages added.
7/8
STPS20170C
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of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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All other names are the property of their respective owners
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