STPS2L25U ® LOW DROP POWER SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS IF(AV) 2A VRRM 25 V Tj (max) 150 °C VF (max) 0.375 V FEATURES AND BENEFITS VERY LOW FORWARD VOLTAGE DROP FOR LESS POWER DISSIPATION OPTIMIZED CONDUCTION/REVERSE LOSSES TRADE-OFF WHICH MEANS THE HIGHEST EFFICIENCY IN THE APPLICATIONS SMB JEDEC DO-214AA DESCRIPTION Single Schottky rectifier suited to Switched Mode Power Supplies and high frequency DC to DC converters. Packaged in SMB (JEDEC DO214-AA), this device is especially intended for use in parallel with MOSFETs in synchronous rectification. ABSOLUTE RATINGS (limiting values) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 25 V IF(RMS) RMS forward current 10 A IF(AV) Average forward current TL = 125°C δ = 0.5 2 A IFSM Surge non repetitive forward current tp = 10 ms Sinusoidal 75 A IRRM Repetitive peak reverse current tp=2 µs square F=1kHz 1 A IRSM Non repetitive peak reverse current tp = 100 µs square 1 A Tstg Storage temperature range - 65 to + 150 °C 150 °C 10000 V/µs Tj dV/dt * : Maximum operating junction temperature * Critical rate of rise of reverse voltage dPtot 1 < thermal runaway condition for a diode on its own heatsink Rth(j−a) dTj June 1999 - Ed: 3A 1/4 STPS2L25U THERMAL RESISTANCES Symbol Rth(j-l) Parameter Junction to lead Value Unit 25 °C/W STATIC ELECTRICAL CHARACTERISTICS Symbol Tests Conditions IR * Reverse leakage current Tests Conditions Tj = 25°C Min. VR = VRRM Tj = 125°C VF * Forward voltage drop Tj = 25°C 15 IF = 2 A Tj = 125°C Tj = 25°C Max. Unit 90 µA 30 mA 0.45 V 0.325 0.375 IF = 4 A 0.53 Tj = 125°C Pulse test : Typ. 0.43 0.51 * tp = 380 µs, δ < 2% To evaluate the maximum conduction losses use the following equation : P = 0.24 x IF(AV) + 0.068 IF2(RMS) Fig. 1: Average forward power dissipation versus average forward current. Fig. 2: Average forward current versus ambient temperature (δ=0.5). PF(av)(W) 1.2 1.0 δ = 0.05 δ = 0.1 δ = 0.2 δ = 0.5 0.8 δ=1 0.6 0.4 T 0.2 tp δ=tp/T IF(av) (A) 0.0 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25 2.50 2/4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 IF(av)(A) Rth(j-a)=Rth(j-l) Rth(j-a)=100°C/W T δ=tp/T 0 Tamb(°C) tp 25 50 75 100 125 150 STPS2L25U Fig. 3: Non repetitive surge peak forward current versus overload duration (maximum values). IM(A) 10 9 8 7 6 5 4 3 2 IM 1 0 1E-3 Fig. 4: Relative variation of thermal impedance junction to ambient versus pulse duration. Zth(j-a)/Rth(j-a) 1.0 0.8 Ta=25°C 0.6 δ = 0.5 Ta=50°C 0.4 δ = 0.2 Ta=100°C 0.2 t T δ = 0.1 t(s) δ=0.5 1E-2 1E-1 1E+0 Fig. 5: Reverse leakage current versus reverse voltage applied (typical values). 1E-1 δ=tp/T tp(s) Single pulse 0.0 1E-2 1E+0 1E+1 tp 1E+2 5E+2 Fig. 6: Junction capacitance versus reverse voltage applied (typical values). C(pF) IR(mA) 1E+2 500 Tj=150°C 1E+1 F=1MHz Tj=25°C Tj=125°C Tj=100°C 1E+0 100 1E-1 Tj=25°C 1E-2 VR(V) 1E-3 0 5 10 VR(V) 15 20 25 Fig. 7: Forward voltage drop versus forward current (maximum values). 10 1 2 5 10 20 30 Fig. 8: Thermal resistance junction to ambient versus copper surface under each lead (Epoxy printed circuit board FR4, copper thickness: 35µm). IFM(A) Rth(j-a) (°C/W) 10.00 120 Typical values Tj=150°C 100 1.00 Tj=125°C 80 Tj=25°C 60 Tj=100°C 0.10 40 20 S(Cu) (cm²) VFM(V) 0.01 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 3/4 STPS2L25U PACKAGE MECHANICAL DATA SMB DIMENSIONS REF. E1 D E Millimeters Inches Min. Max. Min. Max. A1 1.90 2.45 0.075 0.096 A2 0.05 0.20 0.002 0.008 b 1.95 2.20 0.077 0.087 c 0.15 0.41 0.006 0.016 E 5.10 5.60 0.201 0.220 E1 4.05 4.60 0.159 0.181 D 3.30 3.95 0.130 0.156 L 0.75 1.60 0.030 0.063 A1 A2 C L b FOOT PRINT DIMENSIONS (in millimeters) 2.3 1.52 2.75 1.52 Ordering type Marking Package Weight Base qty Delivery mode STPS2L25U G23 SMB 0.107g 2500 Tape & reel Band indicates cathode Epoxy meets UL94,V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics © 1999 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 4/4