STPS8L30B LOW DROP POWER SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS IF(AV) 8A VRRM 30 V Tj (max) VF (max) 150 °C 0.40 V 2 4 3 (TAB) 4 2 FEATURES AND BENEFITS 3 1 NC LOW COST DEVICE WITH LOW DROP FORWARD VOLTAGE FOR LESS POWER DISSIPATION AND REDUCED HEATSINK OPTIMIZED CONDUCTION/REVERSE LOSSES TRADE-OFF WHICH LEADS TO THE HIGHEST YIELD IN THE APPLICATIONS HIGH POWER SURFACE MOUNT MINIATURE PACKAGE DPAK DESCRIPTION Single Schottky rectifier suited to Switched Mode Power Supplies and high frequencyDC to DC converters. Packaged in DPAK, this device is especially intended for use as a Rectifier at the secondary of 3.3V SMPS or DC/DC units. ABSOLUTE RATINGS (limiting values) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 30 V IF(RMS) RMS forward current 7 A IF(AV) Average forward current Tc = 135°C δ = 0.5 8 A IFSM Surge non repetitive forward current tp = 10 ms Sinusoidal 75 A IRRM Repetitive peak reverse current tp = 2 µs F = 1kHz square 1 A IRSM Non repetitive peak reverse current tp = 100µs 2 A Tstg Storage temperature range - 65 to + 150 °C 150 °C 10000 V/µs Tj dV/dt * : square Maximum junction temperature Critical rate of rise of reverse voltage dPtot 1 thermal runaway condition for a diode on its own heatsink < dTj Rth(j−a) October 1998 - Ed: 4A 1/4 STPS8L30B THERMAL RESISTANCES Symbol Rth(j-c) Parameter Junction to case Value Unit 2.5 °C/W STATIC ELECTRICAL CHARACTERISTICS Symbol Tests Conditions IR * Reverse leakage current Tests Conditions Tj = 25°C Min. Typ. Forward voltage drop Unit 1 mA VR = VRRM Tj = 100°C VF * Max. Tj = 25°C Tj = 125°C IF = 8 A Tj = 25°C IF = 16 A 15 40 0.35 0.49 0.4 V 0.63 Tj = 125°C 0.48 0.57 * tp = 380 µs, δ < 2% Pulse test : To evaluate the maximum conduction losses use the following equation : P = 0.23 x IF(AV) + 0.021 IF2(RMS) Fig. 1: Average forward power dissipation versus average forward current. Fig. 2: Average forward current versus ambient temperature (δ=0.5). PF(av)(W) 5.0 IF(av)(A) δ = 0.1 δ = 0.2 9 δ = 0.5 δ = 0.05 4.0 Rth(j-a)=Rth(j-c) 8 7 6 3.0 5 δ= 1 3 T IF(av) (A) 2/4 T 2 1.0 0.0 Rth(j-a)=70°C/W 4 2.0 0 2 4 6 δ=tp/T 8 1 tp 0 10 δ=tp/T 0 Tamb(°C) tp 25 50 75 100 125 150 STPS8L30B Fig. 3: Non repetitive surge peak forward current versus overload duration (maximum values). Fig. 4: Relative variation of thermal impedance junction to ambient versus pulse duration. Zth(j-c)/Rth(j-c) IM(A) 120 1.0 100 0.8 80 Tc=25°C 0.6 Tc=75°C 0.4 Tc=125°C 0.2 δ = 0.5 60 40 δ = 0.2 IM 20 t t(s) δ=0.5 0 1E-3 1E-2 1E-1 1E+0 Fig. 5: Reverse leakage current versus reverse voltage applied (typical values). T δ = 0.1 0.0 1E-4 tp(s) Single pulse 1E-3 tp 1E-1 1E+0 Fig. 6: Junction capacitance versus reverse voltage applied (typical values). C(pF) IR(mA) 3E+2 1E+2 2000 Tj=150°C F=1MHz Tj=25°C 1000 Tj=125°C 1E+1 1E+0 500 1E-1 Tj=25°C 200 1E-2 VR(V) 1E-3 δ=tp/T 1E-2 0 5 10 15 VR(V) 20 25 30 Fig. 7: Forward voltage drop versus forward current (maximum values). 100 10 40 Fig. 8: Thermal resistance junction to ambient versus copper surface under tab (Epoxy printed circuit board FR4, copper thickness: 35µm). IFM(A) Rth(j-a) (°C/W) 100.0 10.0 1 100 80 Typical values Tj=150°C 60 Tj=125°C 1.0 40 Tj=25°C 20 VFM(V) 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 S(Cu) (cm ) 0 0 2 4 6 8 10 12 14 16 18 20 3/4 STPS8L30B PACKAGE MECHANICAL DATA DPAK DIMENSIONS Millimeters Inches REF. Min. A A1 A2 B B2 C C2 D E G H L2 L4 V2 Typ. 2.20 0.90 0.03 0.64 5.20 0.45 0.48 6.00 6.40 4.40 9.35 Max Min. Typ. Max. 2.40 1.10 0.23 0.90 5.40 0.60 0.60 6.20 6.60 4.60 10.10 0.086 0.035 0.001 0.025 0.204 0.017 0.018 0.236 0.251 0.173 0.368 0.094 0.043 0.009 0.035 0.212 0.023 0.023 0.244 0.259 0.181 0.397 0.80 0.60 0° 0.031 1.00 0.023 8° 0° 0.039 8° FOOT PRINT DIMENSIONS (in millimeters) 6.7 6.7 6.7 3 1.6 1.6 2.3 2.3 Ordering type Marking Package Weight Base qty Delivery mode STPS8L30B STPS8L30B DPAK 0.3g 75 Tube STPS8L30B-TR STPS8L30B DPAK 0.3g 2500 Tape & reel Epoxy meets UL94,V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringementof patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics 1998 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. http://www.st.com 4/4