STPS3060CW POWER SCHOTTKY RECTIFIER MAJOR PRODUCTS CHARACTERISTICS IF(AV) A1 K 2 x15 A VRRM 60 V VF (max) 0.65 V A2 FEATURES AND BENEFITS HIGH REVERSE VOLTAGE NEGLIGIBLE SWITCHING LOSSES LOW FORWARD VOLTAGE DROP LOW THERMAL RESISTANCE A2 K A1 DESCRIPTION Dual center tap schottky rectifier suited for switchmode power supply and high frequency DC to DC converters. Packaged in TO-247 this device is intended for use in high frequency inverters. TO-247 ABSOLUTE RATINGS (limiting values) Symbol Parameter VRRM Repetitive peak reverse voltage IF(RMS) RMS forward current Value Unit 60 V Per diode 30 A IF(AV) Average forward current Tc = 125°C δ = 0.5 Per diode Per device 15 30 A IFSM Surge non repetitive forward current tp = 10 ms Sinusoidal Per diode 200 A IRRM Peak repetitive reverse current tp = 2 µs F = 1kHz Per diode 1 A Tstg Storage temperature range - 65 to + 150 °C Tj dV/dt Maximum junction temperature Critical rate of rise reverse voltage July 1998 - Ed: 2 150 10000 V/µs 1/4 STPS3060CW THERMAL RESISTANCES Symbol Rth(j-c) Parameter Junction to case Rth(c) Value Unit Per diode 1.6 °C/W total Coupling 0.9 0.15 °C/W When the diodes 1 and 2 are used simultaneously : ∆ TJ(diode 1) = P(diode1) x Rth(Per diode) + P(diode 2) x Rth(c) ELECTRICAL CHARACTERISTICS STATIC CHARACTERISTICS PER DIODE Symbol Parameter IR * VF ** Tests Conditions Min. Typ. VR = VRRM Max. Unit 30 µA 25 mA V Reverse leakage current Tj = 25°C Forward voltage drop Tj = 25°C IF = 20 A 0.96 Tj = 125°C IF = 20 A 0.8 Tj = 125°C IF = 10 A 5 Tj = 125°C 0.58 0.65 Pulse test : * tp = 5 ms, δ < 2 % ** tp = 380 µs, δ < 2% To evaluate the conduction losses use the following equation : P = 0.56 x IF(AV) + 0.0113 IF2(RMS) Fig. 1: Average forward power dissipation versus average forward current (per diode). Fig. 2: Average current versus temperature(δ = 0.5) (per diode). PF(av)(W) IF(av)(A) 16 δ = 0.1 δ = 0.05 14 δ = 0.2 16 δ = 0.5 Rth(j-a)=Rth(j-c) 14 12 12 10 10 δ= 1 8 Rth(j-a)=15°C/W 8 6 6 T 4 2 0 ambient IF(av) (A) 0 2/4 2 4 6 8 δ=tp/T 10 12 14 T 4 2 tp 16 0 δ=tp/T 0 Tamb(°C) tp 25 50 75 100 125 150 STPS3060CW Fig. 3: Non repetitive surge peak forward curren t versus overload duration (maximum values) (per diode). Fig. 4: Relative variation of thermal transient impedance junction to case versus pulse duration (per diode) . Zth(j-c)/Rth(j-c) IM(A) 1.0 160 140 120 0.8 Tc= 50°C 100 0.6 Tc= 75°C δ = 0.5 80 60 0.4 Tc= 110°C 40 δ = 0.1 IM 20 δ = 0.2 T 0.2 Single pulse t t(s) δ=0.5 0 1E-3 1E-2 1E-1 1E+0 Fig. 5: Reverse leakage current versus reverse voltage applied (typical values) (per diode). δ=tp/T t(s) 0.0 1E-3 1E-2 1E-1 tp 1E+0 Fig. 6: Junction capacitance versus reverse voltage applied (typical values) (per diode). C(pF) IR(mA) 1000 1E+1 F=1MHz Tj=25°C Tj=125°C 1E+0 Tj=100°C 500 Tj=75°C 1E-1 Tj=50°C 200 1E-2 VR(V) 1E-3 5 10 15 20 25 30 35 VR(V) 40 45 50 55 60 100 1 2 5 10 20 60 Fig. 7: Forward voltage drop versus forward current (maximum values) (per diode). VFM(V) 1.8 1.6 Tj=125°C 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0.1 IFM(A) 1 10 100 200 3/4 STPS3060CW PACKAGE MECHANICAL DATA TO247 DIMENSIONS REF. V Millimeters Inches Min. Typ. Max. Min. Typ. Max. Dia. V A H L5 L L2 L4 F2 F1 L1 F3 V2 F4 D L3 F(x3) M G = = E A 4.85 5.15 0.191 0.203 D 2.20 2.60 0.086 0.102 E 0.40 0.80 0.015 0.031 F 1.00 1.40 0.039 0.055 F1 3.00 0.118 F2 2.00 0.078 F3 2.00 2.40 0.078 0.094 F4 3.00 3.40 0.118 0.133 G 10.90 0.429 H 15.45 15.75 0.608 0.620 L 19.85 20.15 0.781 0.793 L1 3.70 4.30 0.145 0.169 L2 18.50 0.728 L3 14.20 14.80 0.559 0.582 L4 34.60 1.362 L5 5.50 0.216 M 2.00 3.00 0.078 0.118 V 5° 5° V2 60° 60° Dia. 3.55 3.65 0.139 0.143 Marking: STPS3060CW Cooling method : C Weight : 4.4 g Recommended torque value : 0.8m.N Maximum torque value : 1.0m.N Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsIbility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics 1998 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. 4/4