STMICROELECTRONICS STPS60L45CW

STPS60L45CW
®
LOW DROP POWER SCHOTTKY RECTIFIER
MAJOR PRODUCTS CHARACTERISTICS
A1
K
IF(AV)
2 x 30 A
Tj (max)
150°C
VRRM
45 V
VF(max)
0.50 V
A2
FEATURES AND BENEFITS
A2
VERY SMALL CONDUCTION LOSSES
NEGLIGIBLE SWITCHING LOSSES
EXTREMELY FAST SWITCHING
LOW FORWARD VOLTAGE DROP
LOW THERMAL RESISTANCE
K
A1
TO-247
DESCRIPTION
Dual center tap schottky barrier rectifier suited for
5V output in off line AC/DC power supplies.
Packaged in TO-247, this device is intended for
use in low voltage, high frequency converters, free
wheeling and polarity protection applications.
ABSOLUTE RATINGS (limiting values, per diode)
Symbol
VRRM
IF(RMS)
Parameter
Repetitive peak reverse voltage
RMS forward current
Value
45
Unit
V
50
A
30
60
A
600
A
IF(AV)
Average forward current
Tc = 135°C
δ = 0.5
IFSM
Surge non repetitive forward current
tp = 10 ms Sinusoidal
IRRM
Repetitive peak reverse current
tp = 2 µs square F=1kHz
2
A
IRSM
Non repetitive peak reverse current
tp = 100 µs square
4
A
Tstg
Storage temperature range
- 65 to + 150
°C
150
°C
10000
V/µs
Tj
Per diode
Per device
Maximum operating junction temperature (*)
dV/dt
Critical rate of rise of reverse voltage
dPtot
1
* :
<
thermal runaway condition for a diode on its own heatsink
Rth(j−a)
dTj
March 1999 - Ed: 2C
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STPS60L45CW
THERMAL RESISTANCES
Symbol
Rth (j-c) Junction to case
Parameter
Rth (c)
Per diode
Total
Value
0.75
0.42
Unit
°C/W
Coupling
0.1
°C/W
When the diodes 1 and 2 are used simultaneously :
∆ Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Symbol
IR *
VF *
Parameter
Tests Conditions
Reverse leakage
current
Tj = 25°C
Forward voltage drop
Tj = 25°C
IF = 30 A
Tj = 125°C
IF = 30 A
Tj = 25°C
IF = 60 A
Tj = 125°C
IF = 60 A
Min.
Typ.
VR = 45 V
175
Tj = 125°C
Max.
Unit
1.5
mA
350
0.55
0.44
V
0.5
0.73
0.64
0.72
Pulse test : * tp = 380 µs, δ < 2%
To evaluate the conduction losses use the following equation :
P = 0.28 x IF(AV) + 0.0073 IF2(RMS)
Fig. 1: Average forward power dissipation
versus average forward current (per diode).
22
20
18
16
14
12
10
8
6
4
2
0
PF(av)(W)
δ = 0.1
δ = 0.2
Fig. 2: Average current versus ambient
temperature (δ=0.5, per diode).
35
δ = 0.5
IF(av)(A)
Rth(j-a)=Rth(j-c)
δ = 0.05
30
δ=1
25
20
15
T
IF(av) (A)
0
2/4
5
10
15
20
25
δ=tp/T
30
10
5
tp
35
Rth(j-a)=15°C/W
T
40
0
δ=tp/T
0
tp
25
Tamb(°C)
50
75
100
125
150
STPS60L45CW
Fig. 3: Non repetitive surge peak forward current versus
overload duration (maximum values, per diode).
Fig. 4: Relative variation of thermal transient
impedance junction to case versus pulse duration.
IM(A)
Zth(j-c)/Rth(j-c)
1.0
400
350
0.8
300
250
0.6
Tc=25°C
200
0.4
150
Tc=75°C
100
t(s)
δ=0.5
0
1E-3
T
0.2
Tc=125°C
t
δ = 0.2
δ = 0.1
IM
50
δ = 0.5
tp(s)
Single pulse
1E-2
1E-1
1E+0
Fig. 5: Reverse leakage current versus reverse
voltage applied (typical values, per diode).
0.0
1E-4
1E-3
δ=tp/T
1E-2
1E-1
tp
1E+0
Fig. 6: Junction capacitance versus reverse
voltage applied (typical values, per diode).
IR(mA)
C(nF)
1E+3
10.0
F=1MHz
Tj=25°C
Tj=150°C
1E+2
Tj=125°C
Tj=100°C
1E+1
1.0
1E+0
Tj=25°C
1E-1
VR(V)
1E-2
0
5
10
15
20
25
30
35
40
45
0.1
VR(V)
1
2
5
10
20
50
Fig. 7: Forward voltage drop versus forward
current (per diode).
IFM(A)
200
100
Typical values
Tj=150°C
Maximum values
Tj=125°C
10
Maximum values
Tj=100°C
Maximum values
Tj=25°C
VFM(V)
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
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STPS60L45CW
PACKAGE MECHANICAL DATA
TO-247
DIMENSIONS
REF.
V
Millimeters
Min.
Dia.
V
A
H
L5
L
L2 L4
F2
F1
L1
F3
V2
F4
D
L3
F(x3)
M
G
=
Type
=
Marking
E
Typ. Max.
Inches
Min.
Typ. Max.
A
4.85
5.15 0.191
D
2.20
2.60 0.086
E
0.40
0.80 0.015
F
1.00
1.40 0.039
F1
3.00
F2
2.00
F3
2.00
2.40 0.078
F4
3.00
3.40 0.118
G
10.90
H 15.45
15.75 0.608
L
19.85
20.15 0.781
L1
3.70
4.30 0.145
L2
18.50
L3 14.20
14.80 0.559
L4
34.60
L5
5.50
M
2.00
3.00 0.078
V
5°
V2
60°
Dia. 3.55
3.65 0.139
0.203
0.102
0.031
0.055
0.118
0.078
0.094
0.133
0.429
0.620
0.793
0.169
0.728
0.582
1.362
0.216
0.118
5°
60°
0.143
Package
Weight
Base qty
Delivery mode
TO-247
4.36 g
30
Tube
STPS60L45CW STPS60L45CW
Cooling method : C
Recommended torque value : 0.8m.N
Maximum torque value : 1.0m.N
Epoxy meets UL94,V0
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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© 1999 STMicroelectronics - Printed in Italy - All rights reserved.
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