STPS40H100CW ® HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS A1 IF(AV) 2 x 20 A VRRM 100 V Tj (max) 175 °C VF (max) 0.61 V K A2 FEATURES AND BENEFITS NEGLIGIBLE SWITCHING LOSSES LOW LEAKAGE CURRENT GOOD TRADE OFF BETWEEN LEAKAGE CURRENT AND FORWARD VOLTAGE DROP LOW THERMAL RESISTANCE AVALANCHE RATED A2 K1 A1 TO-247 DESCRIPTION Dual center tap Schottky rectifier suited for Switch Mode Power Supplies and high frequency DC to DC converters. Packaged in TO-247, this device is intended for use in high frequency inverters. ABSOLUTE RATINGS (limiting values, per diode) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 100 V IF(RMS) RMS forward current 30 A 20 40 A 300 A IF(AV) Average forward current Tc = 160°C δ = 0.5 IFSM Surge non repetitive forward current tp = 10 ms sinusoidal IRRM Repetitive peak reverse current tp = 2 µs F = 1kHz square 1 A IRSM Non repetitive peak reverse current tp = 100 µs square 4 A EAS Non repetitive avalanche energy Tj = 25°C L= 60 mH Ias = 3 A 36 mJ Tstg Storage temperature range - 65 to + 175 °C 175 °C 10000 V/µs Tj dV/dt Maximum operating junction temperature Critical rate of rise of rise voltage August 1999 - Ed: 3D Per diode Per device 1/4 STPS40H100CW THERMAL RESISTANCES Symbol Parameter Rth (j-c) Junction to case Rth (c) Value Unit Per diode Total 0.9 0.55 °C/W Coupling 0.1 When the diodes 1 and 2 are used simultaneously : ∆ Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c) STATIC ELECTRICAL CHARACTERISTICS Symbol Parameter Tests Conditions IR * Reverse leakage current Tj = 25°C Min. VR = VRRM Tj = 125°C VF ** Forward voltage drop Typ. 5 Tj = 25°C IF = 20 A Tj = 125°C IF = 20 A Tj = 25°C IF = 40 A Tj = 125°C IF = 40 A 0.58 Max. Unit 10 µA 15 mA 0.73 V 0.61 0.85 0.67 0.72 * tp = 5 ms, δ < 2% ** tp = 380 µs, δ < 2% Pulse test : To evaluate the maximum conduction losses use the following equation : P = 0.5 x IF(AV) + 0.0055 x IF2(RMS) Fig. 1: Average forward power dissipation versus average forward current (per diode). Fig. 2: Average forward current versus ambient temperature (δ=0.5, per diode). IF(av)(A) PF(av)(W) 16 δ = 0.5 14 δ = 0.2 12 δ = 0.1 10 δ=1 δ = 0.05 8 6 T 4 2 0 0.0 2/4 IF(av) (A) 2.5 5.0 δ=tp/T tp 7.5 10.0 12.5 15.0 17.5 20.0 22.5 25.0 22 20 18 16 14 12 10 8 6 4 2 0 Rth(j-a)=Rth(j-c) Rth(j-a)=15°C/W T δ=tp/T 0 25 Tamb(°C) tp 50 75 100 125 150 175 STPS40H100CW Fig. 3: Non repetitive surge peak forward current versus overload duration (maximum values, per diode). Fig. 4: Relative variation of thermal impedance junction to case versus pulse duration. Zth(j-c)/Rth(j-c) IM(A) 1.0 400 350 0.8 300 250 δ = 0.5 0.6 Tc=50°C 200 Tc=100°C 0.4 150 δ = 0.2 δ = 0.1 100 T Tc=150°C IM 0.2 50 Single pulse t t(s) δ=0.5 0 1E-3 δ=tp/T tp(s) 1E-2 1E-1 1E+0 Fig. 5: Reverse leakage current versus reverse voltage applied (maximum values, per diode). 0.0 1E-3 1E-2 tp 1E-1 1E+0 Fig. 6: Junction capacitance versus reverse voltage applied (typical values, per diode). C(nF) IR(mA) 3.0 1E+1 F=1MHz Tj=25°C Tj=125°C 1E+0 Tj=100°C 1.0 1E-1 Tj=75°C 1E-2 1E-3 1E-4 Tj=25°C VR(V) VR(V) 0 10 20 30 40 50 60 70 80 90 100 0.1 1 2 5 10 20 50 100 Fig. 7: Forward voltage drop versus forward current (per diode). IFM(A) 200 100 Tj=125°C Typical values Tj=125°C Maximum values Tj=25°C Maximum values 10 VFM(V) 1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 3/4 STPS40H100CW PACKAGE MECHANICAL DATA TO-247 DIMENSIONS REF. Millimeters Min. Min. Typ. Max. A 4.85 5.15 0.191 D 2.20 2.60 0.086 E 0.40 0.80 0.015 F 1.00 1.40 0.039 F1 3.00 F2 2.00 F3 2.00 2.40 0.078 F4 3.00 3.40 0.118 G 10.90 H 15.45 15.75 0.608 L 19.85 20.15 0.781 L1 3.70 4.30 0.145 L2 18.50 L3 14.20 14.80 0.559 L4 34.60 L5 5.50 M 2.00 3.00 0.078 V 5° V2 60° Dia. 3.55 3.65 0.139 0.203 0.102 0.031 0.055 V Dia. V A H L5 L L2 L4 F2 F1 L1 F3 V2 F4 D L3 F(x3) M G = E = Typ. Max. Inches 0.118 0.078 0.094 0.133 0.429 0.620 0.793 0.169 0.728 0.582 1.362 0.216 0.118 5° 60° 0.143 Cooling method: C Recommended torque value: 0.8 N.m. Maximum torque value: 1 N.m. Ordering type Marking Package Weight Base qty Delivery mode STPS40H100CW STPS40H100CW TO-247 4.36g 30 Tube Epoxy meets UL94,V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics © 1999 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 4/4