STPS80H100CY ® HIGH VOLTAGE POWER SCHOTTKY RECTIFIER PRELIMINARY DATASHEET MAIN PRODUCT CHARACTERISTICS A1 K IF(AV) 2 x 40 A VRRM 100 V Tj (max) 175 °C VF (max) 0.70 V A2 FEATURES AND BENEFITS ■ ■ ■ ■ ■ ■ ■ HIGH REVERSE VOLTAGE NEGLIGIBLE SWITCHING LOSSES LOW FORWARD VOLTAGE DROP LOW LEAKAGE CURRENT HIGH TEMPERATURE LOW THERMAL RESISTANCE AVALANCHE CAPABILITY SPECIFIED A2 K A1 Max247 DESCRIPTION Dual center tap Schottky rectifier suited for Switched Mode Power Supplies and high frequency DC to DC converters. Packaged in Max247, this device is intended for use in high frequency computer and telecom converters. ABSOLUTE RATINGS (limiting values, per diode) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 100 V IF(RMS) RMS forward current 50 A 40 80 A 400 A 2 A IF(AV) Average forward current Tc = 155°C δ = 0.5 IFSM Surge non repetitive forward current tp = 10 ms sinusoidal IRRM Repetitive peak reverse current tp = 2 µs square F = 1kHz PARM Repetitive peak avalanche power tp = 1µs Tstg Tj dV/dt * : Storage temperature range Per diode Per device Tj = 25°C 39200 W - 65 to + 175 °C 175 °C 10000 V/µs Maximum operating junction temperature * Critical rate of rise of reverse voltage dPtot 1 thermal runaway condition for a diode on its own heatsink < dTj Rth( j − a ) July 2003 - Ed: 2B 1/4 STPS80H100CY THERMAL RESISTANCES Symbol Parameter Rth (j-c) Junction to case Value Unit 0.7 °C/W Per diode Rth (c) Total 0.5 Coupling 0.3 When the diodes 1 and 2 are used simultaneously : ∆ Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c) STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol Parameter Tests conditions IR * Reverse leakage current Tj = 25°C Min. Typ. Forward voltage drop Unit 20 µA 20 mA 0.8 V VR =VRRM Tj = 125°C VF ** Max. 7 Tj = 25°C IF = 40 A Tj = 125°C IF = 40 A Tj = 25°C IF = 80 A Tj = 125°C IF = 80 A 0.65 0.7 0.79 0.84 0.94 * tp = 5 ms, δ < 2 % ** tp = 380 µs, δ < 2% Pulse test : To evaluate the maximum conduction losses use the following equation : P = 0.56 x IF(AV) + 0.0035 x IF2(RMS) Fig. 1: Average forward power dissipation versus Fig. 2: Average forward current versus ambient average forward current (per diode). temperature (δ=0.5, per diode). PF(av)(W) IF(av)(A) 35 δ = 0.5 30 δ = 0.2 δ=1 δ = 0.1 25 δ = 0.05 20 15 T 10 5 0 δ=tp/T IF(av) (A) 0 5 10 15 20 25 30 35 40 tp 45 50 Fig. 3: Normalized avalanche power derating versus pulse duration. 50 45 40 35 30 25 20 15 10 5 0 Rth(j-a)=Rth(j-c) Rth(j-a)=5°C/W T δ=tp/T 0 25 50 75 100 125 150 175 Fig. 4: Normalized avalanche power derating versus junction temperature. PARM(tp) PARM(1µs) 1 Tamb(°C) tp 1.2 PARM(tp) PARM(25°C) 1 0.1 0.8 0.6 0.4 0.01 0.2 0.001 0.01 2/4 Tj(°C) tp(µs) 0.1 1 0 10 100 1000 0 25 50 75 100 125 150 STPS80H100CY Fig. 5: Non repetitive surge peak forward current versus overload duration (maximum values, per diode). Fig. 6: Relative variation of thermal impedance junction to case versus pulse (per diode). Zth(j-c)/Rth(j-c) IM(A) 1.0 500 0.8 400 Tc=50°C Tc=75°C 300 δ = 0.5 0.6 0.4 200 δ = 0.2 δ = 0.1 Tc=110°C T IM 100 0.2 t δ=0.5 Single pulse t(s) 0 1E-3 1E-2 1E-1 1E+0 Fig. 7: Reverse leakage current versus reverse voltage applied (typical values, per diode). 0.0 1E-3 δ=tp/T tp(s) 1E-2 tp 1E-1 1E+0 Fig. 8: Junction capacitance versus reverse voltage applied (typical values, per diode). C(nF) IR(µA) 5.0 1E+4 F=1MHz Tj=25°C Tj=125°C 1E+3 1E+2 1.0 1E+1 Tj=25°C 1E+0 VR(V) VR(V) 1E-1 0 10 20 30 40 50 60 70 80 90 100 0.1 1 2 5 10 20 50 100 Fig. 9: Forward voltage drop versus forward current (maximum values, per diode). IFM(A) 500 Tj=125°C 100 Tj=25°C 10 VFM(V) 1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 3/4 STPS80H100CY PACKAGE MECHANICAL DATA Max247 DIMENSIONS REF. E L1 A1 L b1 b2 e ■ b Inches Min. Max. Min. Max. A 4.70 5.30 0.185 0.209 A1 2.20 2.60 0.087 0.102 b 1.00 1.40 0.038 0.055 b1 2.00 2.40 0.079 0.094 b2 3.00 3.40 0.118 0.133 c 0.40 0.80 0.016 0.031 D 19.70 10.30 0.776 0.799 e 5.35 5.55 0.211 0.219 E 15.30 15.90 0.602 0.626 L 14.20 15.20 0.559 0.598 L1 3.70 4.30 0.146 0.169 A D Millimeters c Ordering type Marking Package Weight Base qty Delivery mode STPS80H100CY STPS80H100CY Max247 4.4g 30 Tube EPOXY MEETS UL94,V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics © 2003 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 4/4