STPS60L30CW ® LOW DROP POWER SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS A1 IF(AV) 2 x 30 A VRRM 30 V Tj (max) 150 °C VF (max) 0.38 V K A2 FEATURES AND BENEFITS VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES EXTREMELY FAST SWITCHING LOW FORWARD VOLTAGE DROP LOW THERMAL RESISTANCE A2 K A1 TO247 DESCRIPTION Dual center tap Schottky rectifier suited for Switch Mode Power Supply and high frequency DC to DC converters. Packaged in TO247, this device is intended for use in low voltage, high frequency inverters, free-wheeling and polarity protection applications. ABSOLUTE RATINGS (limiting values, per diode) Symbol VRRM IF(RMS) Parameter Repetitive peak reverse voltage RMS forward current IF(AV) Average forward current Tc = 130°C δ = 0.5 IFSM Surge non repetitive forward current tp = 10 ms Sinusoidal IRRM Peak repetitive reverse current tp = 2 µs F = 1kHz square Tstg Storage temperature range Tj dV/dt * : Per diode Per device Maximum operating junction temperature * Critical rate of rise reverse voltage Value 30 Unit V 50 A 30 60 A 600 A 2 A - 65 to + 150 °C 150 °C 10000 V/µs dPtot 1 < thermal runaway condition for a diode on its own heatsink Rth(j−a) dTj June 1999 - Ed: 2A 1/4 STPS60L30CW THERMAL RESISTANCE Symbol Parameter Rth (j-c) Value Unit 0.8 0.45 0.1 °C/W Per diode Total Coupling Junction to case Rth (c) °C/W When the diodes 1 and 2 are used simultaneously : ∆ Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c) STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol Parameter IR * VF * Tests Conditions Reverse leakage current Tj = 25°C Forward voltage drop Tj = 25°C IF = 30 A Tj = 125°C IF = 30 A Tj = 25°C IF = 60 A Tj = 125°C IF = 60 A Min. Typ. Max. Unit 4 mA 500 mA 0.46 V VR = VRRM 250 Tj = 125°C 0.33 0.38 0.55 0.45 0.5 Pulse test : * tp = 380 µs, δ < 2% To evaluate the conduction losses use the following equation : P = 0.26x IF(AV) + 0.004 IF2(RMS) Fig. 1: Average forward power dissipation versus average forward current (per diode). IF(av)(A) PF(av)(W) 35 18 16 δ=0.5 δ=0.2 14 δ=1 25 δ=0.05 10 20 8 15 6 2 0 2/4 5 10 15 20 25 30 T 5 δ=tp/T IF(av) (A) Rth(j-a)=15°C/W 10 T 4 0 Rth(j-a)=Rth(j-c) 30 δ=0.1 12 Fig. 2: Average forward current versus ambient temperature (δ=0.5) (per diode). δ=tp/T tp 35 40 0 0 tp 25 Tamb(°C) 50 75 100 125 150 STPS60L30CW Fig. 3: Non repetitive surge peak forward current versus overload duration (maximum values) (per diode). IM(A) 500 450 400 350 300 250 200 150 100 IM 50 0 1E-3 Fig. 4: Relative variation of thermal impedance junction to case versus pulse duration. 1.0 Zth(j-c)/Rth(j-c) 0.8 0.6 Tc=25°C Tc=75°C δ=0.5 0.4 δ=0.2 Tc=125°C t t(s) δ=0.5 1E-2 T δ=0.1 0.2 1E-1 1E+0 Fig. 5: Reverse leakage current versus reverse voltage applied (typical values) (per diode). δ=tp/T tp(s) Single pulse 0.0 1E-4 1E-3 1E-2 1E-1 tp 1E+0 Fig. 6: Junction capacitance versus reverse voltage applied (typical values) (per diode). C(nF) IR(mA) 2E+3 1E+3 10 F=1MHz Tj=25°C Tj=150°C 1E+2 5 Tj=125°C 1E+1 1E+0 2 1E-1 1E-2 Tj=25°C VR(V) VR(V) 0 5 10 15 20 25 30 1 1 2 5 10 20 50 Fig. 7: Forward voltage drop versus forward current (maximum values - per diode). IFM(A) 200 100 Tj=150°C (typical values) Tj=25°C Tj=125°C 10 VFM(V) 1 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 3/4 STPS60L30CW PACKAGE MECHANICAL DATA TO247 DIMENSIONS REF. V Millimeters Inches Min. Typ. Max. Min. Typ. Max. Dia. V A H L5 L L2 L4 F2 F1 L1 F3 V2 F4 D L3 F(x3) M G = E = A 4.85 5.15 0.191 D 2.20 2.60 0.086 E 0.40 0.80 0.015 F 1.00 1.40 0.039 F1 3.00 F2 2.00 F3 2.00 2.40 0.078 F4 3.00 3.40 0.118 G 10.90 H 15.45 15.75 0.608 L 19.85 20.15 0.781 L1 3.70 4.30 0.145 L2 18.50 L3 14.20 14.80 0.559 L4 34.60 L5 5.50 M 2.00 3.00 0.078 V 5° V2 60° Dia. 3.55 3.65 0.139 0.203 0.102 0.031 0.055 0.118 0.078 0.094 0.133 0.429 0.620 0.793 0.169 0.728 0.582 1.362 0.216 0.118 5° 60° 0.143 Cooling method: C Recommended torque value: 0.8 m.N Maximum torque value: 1 m.N Ordering type Marking Package Weight Base qty Delivery mode STPS60L30CW STPS60L30CW TO247 4.36g 30 Tube Epoxy meets UL94,V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics © 1999 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 4/4