STMICROELECTRONICS STPS60L30

STPS60L30CW
®
LOW DROP POWER SCHOTTKY RECTIFIER
MAIN PRODUCT CHARACTERISTICS
A1
IF(AV)
2 x 30 A
VRRM
30 V
Tj (max)
150 °C
VF (max)
0.38 V
K
A2
FEATURES AND BENEFITS
VERY SMALL CONDUCTION LOSSES
NEGLIGIBLE SWITCHING LOSSES
EXTREMELY FAST SWITCHING
LOW FORWARD VOLTAGE DROP
LOW THERMAL RESISTANCE
A2
K
A1
TO247
DESCRIPTION
Dual center tap Schottky rectifier suited for Switch
Mode Power Supply and high frequency DC to DC
converters.
Packaged in TO247, this device is intended for
use in low voltage, high frequency inverters,
free-wheeling and polarity protection applications.
ABSOLUTE RATINGS (limiting values, per diode)
Symbol
VRRM
IF(RMS)
Parameter
Repetitive peak reverse voltage
RMS forward current
IF(AV)
Average forward current
Tc = 130°C
δ = 0.5
IFSM
Surge non repetitive forward current
tp = 10 ms Sinusoidal
IRRM
Peak repetitive reverse current
tp = 2 µs F = 1kHz square
Tstg
Storage temperature range
Tj
dV/dt
* :
Per diode
Per device
Maximum operating junction temperature *
Critical rate of rise reverse voltage
Value
30
Unit
V
50
A
30
60
A
600
A
2
A
- 65 to + 150
°C
150
°C
10000
V/µs
dPtot
1
<
thermal runaway condition for a diode on its own heatsink
Rth(j−a)
dTj
June 1999 - Ed: 2A
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STPS60L30CW
THERMAL RESISTANCE
Symbol
Parameter
Rth (j-c)
Value
Unit
0.8
0.45
0.1
°C/W
Per diode
Total
Coupling
Junction to case
Rth (c)
°C/W
When the diodes 1 and 2 are used simultaneously :
∆ Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Symbol
Parameter
IR *
VF *
Tests Conditions
Reverse leakage
current
Tj = 25°C
Forward voltage drop
Tj = 25°C
IF = 30 A
Tj = 125°C
IF = 30 A
Tj = 25°C
IF = 60 A
Tj = 125°C
IF = 60 A
Min.
Typ.
Max.
Unit
4
mA
500
mA
0.46
V
VR = VRRM
250
Tj = 125°C
0.33
0.38
0.55
0.45
0.5
Pulse test : * tp = 380 µs, δ < 2%
To evaluate the conduction losses use the following equation :
P = 0.26x IF(AV) + 0.004 IF2(RMS)
Fig. 1: Average forward power dissipation versus
average forward current (per diode).
IF(av)(A)
PF(av)(W)
35
18
16
δ=0.5
δ=0.2
14
δ=1
25
δ=0.05
10
20
8
15
6
2
0
2/4
5
10
15
20
25
30
T
5
δ=tp/T
IF(av) (A)
Rth(j-a)=15°C/W
10
T
4
0
Rth(j-a)=Rth(j-c)
30
δ=0.1
12
Fig. 2: Average forward current versus ambient
temperature (δ=0.5) (per diode).
δ=tp/T
tp
35
40
0
0
tp
25
Tamb(°C)
50
75
100
125
150
STPS60L30CW
Fig. 3: Non repetitive surge peak forward current
versus overload duration (maximum values) (per
diode).
IM(A)
500
450
400
350
300
250
200
150
100 IM
50
0
1E-3
Fig. 4: Relative variation of thermal impedance
junction to case versus pulse duration.
1.0
Zth(j-c)/Rth(j-c)
0.8
0.6
Tc=25°C
Tc=75°C
δ=0.5
0.4
δ=0.2
Tc=125°C
t
t(s)
δ=0.5
1E-2
T
δ=0.1
0.2
1E-1
1E+0
Fig. 5: Reverse leakage current versus reverse
voltage applied (typical values) (per diode).
δ=tp/T
tp(s)
Single pulse
0.0
1E-4
1E-3
1E-2
1E-1
tp
1E+0
Fig. 6: Junction capacitance versus reverse
voltage applied (typical values) (per diode).
C(nF)
IR(mA)
2E+3
1E+3
10
F=1MHz
Tj=25°C
Tj=150°C
1E+2
5
Tj=125°C
1E+1
1E+0
2
1E-1
1E-2
Tj=25°C
VR(V)
VR(V)
0
5
10
15
20
25
30
1
1
2
5
10
20
50
Fig. 7: Forward voltage drop versus forward
current (maximum values - per diode).
IFM(A)
200
100
Tj=150°C
(typical values)
Tj=25°C
Tj=125°C
10
VFM(V)
1
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
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STPS60L30CW
PACKAGE MECHANICAL DATA
TO247
DIMENSIONS
REF.
V
Millimeters
Inches
Min. Typ. Max. Min. Typ. Max.
Dia.
V
A
H
L5
L
L2 L4
F2
F1
L1
F3
V2
F4
D
L3
F(x3)
M
G
=
E
=
A
4.85
5.15 0.191
D
2.20
2.60 0.086
E
0.40
0.80 0.015
F
1.00
1.40 0.039
F1
3.00
F2
2.00
F3 2.00
2.40 0.078
F4 3.00
3.40 0.118
G
10.90
H 15.45
15.75 0.608
L 19.85
20.15 0.781
L1 3.70
4.30 0.145
L2
18.50
L3 14.20
14.80 0.559
L4
34.60
L5
5.50
M
2.00
3.00 0.078
V
5°
V2
60°
Dia. 3.55
3.65 0.139
0.203
0.102
0.031
0.055
0.118
0.078
0.094
0.133
0.429
0.620
0.793
0.169
0.728
0.582
1.362
0.216
0.118
5°
60°
0.143
Cooling method: C
Recommended torque value: 0.8 m.N
Maximum torque value: 1 m.N
Ordering type
Marking
Package
Weight
Base qty
Delivery mode
STPS60L30CW
STPS60L30CW
TO247
4.36g
30
Tube
Epoxy meets UL94,V0
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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© 1999 STMicroelectronics - Printed in Italy - All rights reserved.
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