STS1DNC45 DUAL N-CHANNEL 450V - 4.1Ω - 0.4A SO-8 SuperMESH™ POWER MOSFET TYPE STS1DNC45 ■ ■ ■ VDSS RDS(on) ID 450 V < 4.5 Ω 0.4 A TYPICAL RDS(on) = 4.1Ω STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY GATE CHARGE MINIMIZED SO-8 DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS SWITCH MODE LOW POWER SUPPLIES (SMPS) ■ DC-DC CONVERTERS ■ LOW POWER, LOW COST CFL (COMPACT FLUORESCENT LAMPS) ■ LOW POWER BATTERY CHARGERS ■ ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID Value Unit Drain-source Voltage (VGS = 0) Parameter 450 V Drain-gate Voltage (RGS = 20 kΩ) 450 V Gate- source Voltage ± 30 V Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C 0.40 0.25 A A IDM () Drain Current (pulsed) 1.6 A PTOT Total Dissipation at TC = 25°C Dual Operation Total Dissipation at TC = 25°C Single Operation 1.6 2 W W 3 V/ns dv/dt(1) Peak Diode Recovery voltage slope (● ) Pulse width limited by safe operating area June 2003 (1)ISD ≤ 0.4 A, di/dt ≤100A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX. 1/8 STS1DNC45 THERMAL DATA Rthj-amb(#) Tj Tstg Thermal Resistance Junction-ambient Max Single Operation Thermal Resistance Junction-ambient Max Dual Operation 62.5 78 °C/W °C/W Max. Operating Junction Temperature 150 °C –65 to 150 °C Storage Temperature (#) When Mounted on FR4 board (Steady State) AVALANCHE CHARACTERISTICS Symbol Parameter Max Value Unit IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) 0.4 A EAS Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) 30 mJ ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol V(BR)DSS IDSS IGSS Parameter Test Conditions Min. Typ. Max. 450 Unit Drain-source Breakdown Voltage ID = 250 µA, VGS = 0 V Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating 1 µA VDS = Max Rating, TC = 125 °C 50 µA Gate-body Leakage Current (VDS = 0) VGS = ± 30V ±100 nA ON (1) Symbol Parameter Test Conditions VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250µA RDS(on) Static Drain-source On Resistance VGS = 10 V, ID = 0.5 A Min. Typ. Max. Unit 2.3 3 3.7 V 4.1 4.5 Ω Typ. Max. Unit DYNAMIC Symbol gfs (1) 2/8 Parameter Test Conditions Min. Forward Transconductance VDS = 25 V, ID = 0.5 A 1.1 S Ciss Input Capacitance VDS = 25 V, f = 1 MHz, VGS = 0 160 pF Coss Output Capacitance 27.5 pF Crss Reverse Transfer Capacitance 4.7 pF STS1DNC45 ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON Symbol td(on) tr Qg Qgs Qgd Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions Min. Typ. Max. Unit VDD = 225 V, ID = 0.5 A RG = 4.7Ω VGS = 10 V (see test circuit, Figure 3) 6.7 ns 4 ns VDD = 360 V, ID = 1.5 A, VGS = 10 V 7 1.3 3.2 10 nC nC nC Typ. Max. Unit SWITCHING OFF Symbol tr(off) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Conditions Min. 8.5 12 18 VDD = 360 V, ID = 1.5 A RG = 4.7Ω, VGS = 10 V (see test circuit, Figure 5) ns ns ns SOURCE DRAIN DIODE Symbol Max. Unit Source-drain Current 0.4 A ISDM (2) Source-drain Current (pulsed) 1.6 A VSD (1) Forward On Voltage ISD = 0.4 A, VGS = 0 1.6 V Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 0.4 A, di/dt = 100A/µs, VDD = 100 V, Tj = 150°C (see test circuit, Figure 5) ISD trr Qrr IRRM Parameter Test Conditions Min. Typ. 225 530 4.7 ns nC A Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. Safe Operating Area Thermal Impedance 3/8 STS1DNC45 Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations 4/8 STS1DNC45 Normalized Gate Threshold Voltage vs Temp. Normalized On Resistance vs Temperature Source-drain Diode Forward Characteristics Normalized BVDSS vs Temperature Max Id Current vs Tc Maximum Avalanche Energy vs Temperature 5/8 STS1DNC45 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/8 STS1DNC45 SO-8 MECHANICAL DATA mm DIM. MIN. TYP. A a1 inch MAX. MIN. TYP. 1.75 0.1 0.068 0.25 a2 MAX. 0.003 0.009 1.65 0.064 a3 0.65 0.85 0.025 0.033 b 0.35 0.48 0.013 0.018 b1 0.19 0.25 0.007 0.010 C 0.25 0.5 0.010 0.019 D 4.8 5.0 0.188 0.196 E 5.8 6.2 0.228 0.244 c1 45 (typ.) e 1.27 e3 3.81 0.050 0.150 F 3.8 4.0 0.14 0.157 L 0.4 1.27 0.015 0.050 M S 0.6 0.023 8 (max.) 0016023 7/8 STS1DNC45 Information furnished is believed to be accurate and reliable. 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