STTH30R03CW/CG ® HIGH FREQUENCY SECONDARY RECTIFIER MAJOR PRODUCT CHARACTERISTICS IF(AV) 2 x 15 A VRRM 300 V IRM (typ.) 4.5A Tj (max) 175 °C VF (max) 1.4 V trr (max) 35 ns A2 K A1 TO-247 STTH30R03CW FEATURES AND BENEFITS ■ ■ ■ Designed for high frequency applications. Hyperfast recovery competes with GaAs devices. Allows size decrease of snubbers and heatsinks. K DESCRIPTION A2 The TURBOSWITCH "R" is an ultra high performance diode. This TURBOSWITCH family, which drastically cuts losses in associated MOSFET when run at high dIF/dt, is suited for HF OFF-Line SMPS and DC/DC converters. A1 2 D PAK STTH30R03CG ABSOLUTE RATINGS (limiting values, per diode) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 300 V IF(RMS) RMS forward current 30 A 15 30 A 120 A - 65 + 175 °C + 175 °C IF(AV) Average forward current Tc = 120°C δ = 0.5 IFSM Surge non repetitive forward current tp = 10 ms sinusoidal Tstg Storage temperature range Tj Maximum operating junction temperature July 2002 - Ed: 1C Per diode Per device 1/6 STTH30R03CW/CG THERMAL AND POWER DATA Symbol Rth (j-c) Parameter Junction to case Rth (c) Value Unit Per diode 2.0 °C/W Total 1.2 Coupling 0.4 STATIC ELECTRICAL CHARACTERISTICS Symbol IR * VF ** Parameter Tests conditions Reverse leakage current VR = VRRM Forward voltage drop IF = 15 A Min. Typ. Tj = 25°C 30 Tj = 125°C Max. Unit 20 µA 200 1.9 Tj = 25°C Tj = 125°C 1.1 1.4 Typ. Max. V Pulse test : * tp = 5 ms, δ < 2 % ** tp = 380 µs, δ < 2% To evaluate the maximum conduction losses use the following equation : P = 1 x IF(AV) + 0.026 IF2(RMS) RECOVERY CHARACTERISTICS Symbol trr Tests conditions IF = 0.5 A Irr = 0.25 A IR = 1A Min. 20 Tj = 25°C VR = 200 V IF = 15A dIF/dt = - 200A/µs ns 35 IF = 1 A dIF/dt = - 50 A/µs VR = 30V IRM Unit 4.5 Tj = 125°C S factor 6 A 0.4 TURN-ON SWITCHING CHARACTERISTICS Symbol tfr VFP 2/5 Tests conditions Max. Unit Tj = 25°C IF = 15A dIF/dt = 100A/µs measured at 1.1xVFmax 300 ns Tj = 25°C IF = 15A 3.5 V dIF/dt = 100A/µs Min. Typ. STTH30R03CW/CG Fig. 1: Conduction losses versus average current Fig. 2: Forward voltage drop versus forward current. IFM(A) P(W) 30 δ = 0.05 δ = 0.1 200 δ = 0.5 δ = 0.2 Tj=125°C Maximum values 100 25 δ=1 Tj=125°C Typical values 20 Tj=25°C Maximum values 15 10 10 T 5 IF(av) (A) 0 0 2 4 6 8 10 δ=tp/T 12 14 16 VFM(V) tp 18 1 20 Fig. 3: Relative variation of thermal impedance junction to case versus pulse duration. 0 1 1 2 2 3 3 4 4 Fig. 4: Peak reverse recovery current versus dIF/dt (90% confidence). IRM(A) Zth(j-c)/Rth(j-c) 1.0 12 0.8 10 VR=200V Tj=125°C IF= 2 x IF(av) IF=IF(av) 8 δ = 0.5 0.6 6 0.4 IF= 0.5 x IF(av) δ = 0.2 δ = 0.1 4 T 0.2 Single pulse 0.0 1E-3 2 tp(s) 1E-2 δ=tp/T 1E-1 dIF/dt(A/µs) tp 1E+0 Fig. 5: Reverse recovery time versus dIF/dt (90% confidence). 0 0 50 100 150 200 250 300 350 400 450 500 Fig. 6: Reverse recovery charges versus dIF/dt (90% confidence). trr(ns) Qrr(nC) 80 150 VR=200V Tj=125°C VR=200V Tj=125°C 70 IF=2 x IF(av) 125 60 IF=IF(av) 100 IF=2 x IF(av) 50 IF=IF(av) 40 30 IF=0.5 x IF(av) 75 50 20 IF=0.5 x IF(av) 10 0 25 dIF/dt(A/µs) dIF/dt(A/µs) 0 50 100 150 200 250 300 350 400 450 500 0 0 50 100 150 200 250 300 350 400 450 500 3/6 STTH30R03CW/CG Fig. 7: Softness factor (tb/ta) versus dIF/dt (typical values). S factor 0.6 0.5 0.4 0.3 0.2 0.1 0.0 dIF/dt(A/µs) 0 50 IF < 2 x IF(av) VR=200V Tj=125°C 100 150 200 250 300 350 400 450 500 Fig. 9: Transient peak forward voltage versus dIF/dt (90% confidence). Fig. 8: Relative variation of dynamic parameters versus junction temperature (Reference: Tj=125°C). 2.6 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 25 dIF/dt(A/µs) 4/6 50 Tj(°C) 50 75 100 125 tfr(ns) IF=IF(av) Tj=125°C 0 IRM Fig. 10: Forward recovery time versus dIF/dt (90% confidence). VFP(V) 20 18 16 14 12 10 8 6 4 2 0 S factor 100 150 200 250 300 350 400 450 500 500 450 400 350 300 250 200 150 100 50 0 VFR=1.1 x VF max. IF=IF(av) Tj=125°C dIF/dt(A/µs) 0 50 100 150 200 250 300 350 400 450 500 STTH30R03CW/CG PACKAGE MECHANICAL DATA D2PAK DIMENSIONS A E REF. Millimeters Inches A A1 A2 B B2 C C2 D E G L L2 L3 M R V2 Min. Max. 4.40 4.60 2.49 2.69 0.03 0.23 0.70 0.93 1.14 1.70 0.45 0.60 1.23 1.36 8.95 9.35 10.00 10.40 4.88 5.28 15.00 15.85 1.27 1.40 1.40 1.75 2.40 3.20 0.40 typ. 0° 8° Min. Max. 0.173 0.181 0.098 0.106 0.001 0.009 0.027 0.037 0.045 0.067 0.017 0.024 0.048 0.054 0.352 0.368 0.393 0.409 0.192 0.208 0.590 0.624 0.050 0.055 0.055 0.069 0.094 0.126 0.016 typ. 0° 8° C2 L2 D L L3 A1 B2 R C B G A2 M * V2 * FLAT ZONE NO LESS THAN 2mm FOOTPRINT 16.90 10.30 5.08 1.30 3.70 8.90 5/6 STTH30R03CW/CG PACKAGE MECHANICAL DATA TO-247 DIMENSIONS REF. V Millimeters Inches Min. Typ. Max. Min. Typ. Max. Dia. V A H L5 L L2 L4 F2 F1 L1 F3 V2 F4 D L3 F(x3) M G = ■ ■ ■ ■ E = Ordering code Marking STTH30R03CW STTH30R03CW STTH30R03CG STTH30R03CG STTH30R03CG-TR STTH30R03CG Cooling method: by conduction (C) Recommended torque value: 0.8 N.m. Maximum torque value: 1 N.m. Epoxy meets UL 94,V0 A 4.85 5.15 0.191 D 2.20 2.60 0.086 E 0.40 0.80 0.015 F 1.00 1.40 0.039 F1 3.00 F2 2.00 F3 2.00 2.40 0.078 F4 3.00 3.40 0.118 G 10.90 H 15.45 15.75 0.608 L 19.85 20.15 0.781 L1 3.70 4.30 0.145 L2 18.50 L3 14.20 14.80 0.559 L4 34.60 L5 5.50 M 2.00 3.00 0.078 V 5° V2 60° Dia. 3.55 3.65 0.139 Package TO-247 D2PAK D2PAK Weight 4.36g 1.48g 1.48g Base qty 30 50 1000 0.203 0.102 0.031 0.055 0.118 0.078 0.094 0.133 0.429 0.620 0.793 0.169 0.728 0.582 1.362 0.216 0.118 5° 60° 0.143 Delivery mode Tube Tube Tape & Reel Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics © 2002 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 6/6