STMICROELECTRONICS STTH6003TV

STTH6003TV/CW

HIGH FREQUENCY SECONDARY RECTIFIER
MAJOR PRODUCT CHARACTERISTICS
IF(AV)
2 x 30 A
VRRM
300 V
VF (max)
1V
trr (max)
55 ns
A1
K1
A1
A2
K2
A2
K
K1
A1
FEATURES AND BENEFITS
COMBINES HIGHEST RECOVERY AND
VOLTAGE PERFORMANCE
ULTRA-FAST, SOFT AND NOISE-FREE
RECOVERY
INSULATED PACKAGE: ISOTOP
Insulation voltage: 2500 VRMS
Capacitance: < 45 pF
LOW INDUCTANCE AND LOW CAPACITANCE ALLOW SIMPLIFIED LAYOUT
DESCRIPTION
Dual rectifiers suited for Switch Mode Power
Supply and high frequency DC to DC converters.
Packaged either in ISOTOP or in TO-247, this
device is intended for use in low voltage, high
K2
A2
K
A2
ISOTOP
STTH6003TV
A1
TO-247
STTH6003CW
frequency inverters, free wheeling operation,
welding equipments and telecom power supplies.
ABSOLUTE RATINGS (limiting values, per diode)
Symbol
VRRM
IF(RMS)
IF(RMS)
IF(AV)
Parameter
Repetitive peak reverse voltage
RMS forward current
RMS forward current
Average forward current
ISOTOP
TO-247
IFSM
Surge non repetitive forward
current.
IRSM
Tstg
ISOTOP
TO-247
Non repetitive peak reverse current
Storage temperature range
Tj
Maximum operating junction temperature
ISOTOP
TO-247
Tc = 95°C Per diode
δ = 0.5
Per device
Tc =135°C Per diode
δ = 0.5
Per device
tp = 10 ms sinusoidal
tp = 10 ms sinusoidal
tp =100 µs square
ISOTOP
TO-247
ISOTOP
TO-247
Value
300
100
60
30
60
Unit
V
A
A
A
30
60
A
400
300
4
- 55 to + 150
- 65 to + 175
150
175
A
A
A
°C
°C
°C
°C
ISOTOP is a registered trademark of STMicroelectronics
October 1999 - Ed: 5C
1/6
STTH6003TV/CW
THERMAL RESISTANCES
Symbol
Rth (j-c)
Parameter
ISOTOP
Junction to case
TO-247
Rth (c)
Value
1.4
0.75
Per diode
Total
Per diode
Total
Coupling
Unit
°C/W
1
0.55
0.1
When the diodes 1 and 2 are used simultaneously:
∆Tj (diode 1) = P (diode 1) x Rth(j-c) (per diode) + P (diode 2) x Rth(C)
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Symbol
IR *
VF **
Parameter
Tests conditions
Reverse leakage
current
VR = 300 V
Forward voltage drop
IF = 30 A
Min.
Typ.
Tj = 25°C
60
Tj = 125°C
Max.
Unit
60
µA
600
1.25
Tj = 25°C
Tj = 125°C
V
0.85
1
Typ.
Max.
Unit
40
ns
Pulse test : * tp = 5 ms, δ < 2 %
** tp = 380 µs, δ < 2%
To evaluate the maximum conduction losses use the following equation:
P = 0.75 x IF(AV) + 0.008 x IF2(RMS)
RECOVERY CHARACTERISTICS
Symbol
trr
Tests conditions
IF = 0.5 A
IF = 1 A
tfr
VFP
Sfactor
IRM
2/6
Irr = 0.25 A
IR = 1A
dIF/dt = - 50 A/µs
VR = 30 V
IF = 30 A
dIF/dt = 200 A/µs
Min.
Tj = 25°C
55
Tj = 25°C
VFR = 1.1 x VF max.
Vcc = 200 V
dIF/dt = 200 A/µs
IF = 30 A
Tj = 125°C
350
ns
5
V
0.3
11
A
STTH6003TV/CW
Fig. 1: Conduction losses versus average current
(per diode).
Fig. 2: Forward voltage drop versus forward
current (maximum values, per diode).
P1(W)
IFM(A)
40
δ = 0.1 δ = 0.2
35
Tj=125°C
Typical values
δ = 0.5
δ = 0.05
100
30
δ=1
Tj=125°C
Maximum values
25
20
10
15
10
T
5
Tj=25°C
Maximum values
40
VFM(V)
1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6
Fig. 3a: Relative variation of thermal impedance
junction to case versus pulse duration (ISOTOP).
Fig. 3b: Relative variation of thermal impedance
junction to case versus pulse duration (TO-247).
0
IF(av) (A)
0
5
10
15
20
δ=tp/T
25
30
tp
35
Zth(j-c)/Rth(j-c)
Zth(j-c)/Rth(j-c)
1.0
1.0
0.8
0.8
δ = 0.5
0.6
0.4
0.6
0.4
δ = 0.2
δ = 0.1
δ = 0.2
T
δ = 0.1
T
0.2
0.2
Single pulse
Single pulse
0.0
1E-3
tp(s)
1E-2
1E-1
δ=tp/T
1E+0
tp
1E+1
Fig. 4: Peak reverse recovery current versus
dIF/dt (90% confidence,per diode).
0.0
1E-4
1E-3
1E-2
δ=tp/T
1E-1
tp
1E+0
trr(ns)
VR=200V
Tj=125 °C
IF=2*IF(a v)
IF=IF(av)
IF=0.5*IF(av)
dIF/dt(A/µs)
0
tp(s)
Fig. 5: Reverse recovery time versus dIF/dt (90%
confidence, per diode).
IRM(A)
22
20
18
16
14
12
10
8
6
4
2
0
δ = 0.5
50 100 150 200 250 300 350 400 450 500
180
160
140
120
VR=200V
Tj=125 °C
IF=2*IF(av)
100
80
60
40
20
0
IF=IF(av)
IF=0.5*IF(av)
dIF/dt(A/µs)
0
50 100 150 200 250 300 350 400 450 500
3/6
STTH6003TV/CW
Fig. 6: Softness factor (tb/ta) versus dIF/dt (typical
values, per diode).
S factor
0.6
VR=200V
Tj=125 °C
0.5
0.4
0.3
0.2
0.1
dIF/dt(A/µs)
0.0
0
50 100 150 200 250 300 350 400 450 500
Fig. 8: Transient peak forward voltage versus
dIF/dt (90% confidence,per diode).
Fig. 7: Relative variation of dynamic parameters
versus junction temperature (reference: Tj = 125°C).
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
25
IRM
Tj(°C)
50
75
100
125
Fig. 9: Forward recovery time versus dIF/dt (90%
confidence, per diode).
tfr(ns)
VFP(V)
500
10
IF=IF(av)
Tj=125 °C
8
400
6
300
4
200
2
100
0
S factor
IF=IF(av)
VFR=1.1*VFmax
Tj=125 °C
dIF/dt(A/µs)
dIF/dt(A/µs)
0
4/6
50 100 150 200 250 300 350 400 450 500
0
0
50 100 150 200 250 300 350 400 450 500
STTH6003TV/CW
PACKAGE MECHANICAL DATA
ISOTOP
DIMENSIONS
REF.
Millimeters
Inches
A
A1
B
C
C2
D
D1
E
E1
E2
G
G1
G2
F
F1
P
P1
S
Min. Max.
11.80 12.20
8.90 9.10
7.8
8.20
0.75 0.85
1.95 2.05
37.80 38.20
31.50 31.70
25.15 25.50
23.85 24.15
24.80 typ.
14.90 15.10
12.60 12.80
3.50 4.30
4.10 4.30
4.60 5.00
4.00 4.30
4.00 4.40
30.10 30.30
Min. Max.
0.465 0.480
0.350 0.358
0.307 0.323
0.030 0.033
0.077 0.081
1.488 1.504
1.240 1.248
0.990 1.004
0.939 0.951
0.976 typ.
0.587 0.594
0.496 0.504
0.138 0.169
0.161 0.169
0.181 0.197
0.157 0.69
0.157 0.173
1.185 1.193
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STTH6003TV/CW
PACKAGE MECHANICAL DATA
TO-247
DIMENSIONS
REF.
V
Millimeters
Min.
Dia.
V
A
H
L5
L
L2 L4
F2
F1
L1
F3
V2
F4
D
L3
F(x3)
M
G
=
Ordering code
STTH6006TV1
E
=
Marking
STTH6006TV
Package
ISOTOP
STTH6006CW STTH6006CW
TO-247
Cooling method: by conduction(C)
Recommended torque value (ISOTOP): 1.3 N.m.
Recommended torque value (TO-247°: 0.8 N.m.
Maximum torque value (ISOTOP): 1.5 N.m.
Maximum torque value (TO-247): 1.0 N.m.
Epoxy meets UL 94,V0
Inches
Typ. Max. Min.
Typ. Max.
A
4.85
5.15 0.191
D
2.20
2.60 0.086
E
0.40
0.80 0.015
F
1.00
1.40 0.039
F1
3.00
F2
2.00
F3 2.00
2.40 0.078
F4 3.00
3.40 0.118
G
10.90
H 15.45
15.75 0.608
L
19.85
20.15 0.781
L1
3.70
4.30 0.145
L2
18.50
L3 14.20
14.80 0.559
L4
34.60
L5
5.50
M
2.00
3.00 0.078
V
5°
V2
60°
Dia. 3.55
3.65 0.139
0.203
0.102
0.031
0.055
Weight
27g
without screws
4.36g
Base qty
10
with screws
30
0.118
0.078
0.094
0.133
0.429
0.620
0.793
0.169
0.728
0.582
1.362
0.216
0.118
5°
60°
0.143
Delivery mode
Tube
Tube
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
 1999 STMicroelectronics - Printed in Italy - All rights reserved.
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