STP3NA100 STP3NA100FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE V DSS R DS(on) ID STP3NA100 STP3NA100FI 1000 V 1000 V <5 Ω <5Ω 3.5 A 2A ■ ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 4.3 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED REDUCED THRESHOLD VOLTAGE SPREAD APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWITCHING ■ SWITCH MODE POWER SUPPLIES (SMPS) ■ DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE 3 1 3 2 1 TO-220 2 TO-220FI INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value STP3NA100 V DS V DGR V GS Unit STP3NA100FI Drain-source Voltage (V GS = 0) 1000 V Drain- gate Voltage (R GS = 20 kΩ) 1000 V Gate-source Voltage ± 30 V o ID Drain Current (continuous) at T c = 25 C 3.5 2.0 A ID Drain Current (continuous) at T c = 100 o C 2.0 1.2 A IDM (•) P tot Drain Current (pulsed) 14 14 A Total Dissipation at T c = 25 o C 110 45 W Derating Factor 0.88 0.36 W/ o C V ISO Insulation Withstand Voltage (DC) T stg Storage Temperature Tj Max. Operating Junction Temperature 2000 V -65 to 150 o C 150 o C (•) Pulse width limited by safe operating area February 1998 1/9 STP3NA100/FI THERMAL DATA R thj-case Thermal Resistance Junction-case Max R thj-amb R thc-sink Tl Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose TO-220 ISOWATT220 1.14 2.78 62.5 0.5 300 o C/W o C/W C/W o C o AVALANCHE CHARACTERISTICS Symbol Max Value Unit I AR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by T j max, δ < 1%) Parameter 3.5 A E AS Single Pulse Avalanche Energy (starting T j = 25 o C, I D = I AR , VDD = 50 V) 170 mJ ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symbol V (BR)DSS Parameter Drain-source Breakdown Voltage Test Conditions I D = 250 µA I DSS Zero Gate Voltage V DS = Max Rating Drain Current (V GS = 0) V DS = Max Rating I GSS Gate-body Leakage Current (V DS = 0) Min. Typ. Max. 1000 VGS = 0 Unit V T c = 125 o C V GS = ± 30 V 25 250 µA µA ± 100 nA ON (∗) Symbol Parameter Test Conditions V GS(th) Gate Threshold Voltage V DS = VGS ID = 250 µA R DS(on) Static Drain-source On Resistance V GS = 10V I D = 1.5 A ID(on) On State Drain Current V DS > I D(on) x R DS(on)max V GS = 10 V Min. Typ. Max. Unit 2.25 3 3.75 V 4.3 5 Ω 3.5 A DYNAMIC Symbol g fs (∗) C iss C oss C rss 2/9 Parameter Test Conditions Forward Transconductance V DS > I D(on) x R DS(on)max Input Capacitance Output Capacitance Reverse Transfer Capacitance V DS = 25 V f = 1 MHz I D = 1.5 A V GS = 0 Min. Typ. 1.5 3 1100 85 20 Max. Unit S 1430 110 30 pF pF pF STP3NA100/FI ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol Typ. Max. Unit t d(on) tr Turn-on Time Rise Time Parameter V DD = 500 V R G = 4.7 Ω Test Conditions I D = 1.7 A V GS = 10 V Min. 20 27 27 35 ns ns Qg Q gs Q gd Total Gate Charge Gate-Source Charge Gate-Drain Charge V DD = 800 V I D = 3.5 A V GS = 10 V 48 8 23 65 nC nC nC Typ. Max. Unit 62 22 95 85 30 125 ns ns ns Typ. Max. Unit 3.5 14 A A 1.6 V SWITCHING OFF Symbol t r(Voff) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Conditions Min. V DD = 800 V I D = 3.5 A R G = 47 Ω V GS = 10 V (see test circuit, figure 5) SOURCE DRAIN DIODE Symbol Parameter Test Conditions I SD I SDM (•) Source-drain Current Source-drain Current (pulsed) V SD (∗) Forward On Voltage I SD = 3.5 A Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 3.5 A di/dt = 100 A/µs o V DD = 100 V T j = 150 C (see circuit, figure 5) t rr Q rr I RRM Min. V GS = 0 1000 ns 15 µC 35 A (∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % (•) Pulse width limited by safe operating area Safe Operating Area for TO-220 Safe Operating Area for TO-220FP 3/9 STP3NA100/FI Thermal Impedance for TO-220 Thermal Impedance forTO-220FP Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance 4/9 STP3NA100/FI Gate Charge vs Gate-source Voltage Capacitance Variations Normalized Gate Threshold Voltage vs Temperature Normalized On Resistance vs Temperature Source-drain Diode Forward Characteristics 5/9 STP3NA100/FI Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/9 STP3NA100/FI TO-220 MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 D1 0.107 1.27 0.050 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.203 G1 2.4 2.7 0.094 0.106 H2 10.0 10.40 0.393 L2 0.409 16.4 L4 0.645 13.0 14.0 0.511 0.551 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.2 6.6 0.244 0.260 L9 3.5 3.93 0.137 0.154 DIA. 3.75 3.85 0.147 0.151 D1 C D A E L5 H2 G G1 F1 L2 F2 F Dia. L5 L9 L7 L6 L4 P011C 7/9 STP3NA100/FI ISOWATT220 MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 4.4 4.6 0.173 0.181 B 2.5 2.7 0.098 0.106 D 2.5 2.75 0.098 0.108 E 0.4 0.7 0.015 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.7 0.045 0.067 F2 1.15 1.7 0.045 0.067 G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 L2 0.409 16 0.630 28.6 30.6 1.126 1.204 L4 9.8 10.6 0.385 0.417 L6 15.9 16.4 0.626 0.645 L7 9 9.3 0.354 0.366 Ø 3 3.2 0.118 0.126 B D A E L3 L3 L6 F2 H G G1 ¯ F F1 L7 1 2 3 L2 8/9 L4 P011G STP3NA100/FI Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. © 1998 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A ... 9/9