STP20NM60-STP20NM60FP-STW20NM60 STB20NM60 - STB20NM60-1 N-CHANNEL 600V - 0.25Ω - 20A TO-220/FP/D²/I²PAK/TO-247 MDmesh™ MOSFET Table 1: General Features TYPE STP20NM60 STP20NM60FP STB20NM60 STB20NM60-1 STW20NM60 ■ ■ ■ ■ ■ Figure 1: Package VDSS RDS(on) ID 600 V 600 V 600 V 600 V 600 V < 0.29 Ω < 0.29 Ω < 0.29 Ω < 0.29 Ω < 0.29 Ω 20 A 20 A 20 A 20 A 20 A TYPICAL RDS(on) = 0.25 Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE CHARGE LOW GATE INPUT RESISTANCE DESCRIPTION The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition’s products. 3 1 2 3 1 TO-220 2 TO-220FP 3 2 1 3 TO-247 3 12 1 D²PAK I²PAK Figure 2: Internal Schematic Diagram APPLICATIONS The MDmesh™ family is very suitable for increasing power density of high voltage converters allowing system miniaturization and higher efficiencies. Table 2: Order Codes SALES TYPE MARKING PACKAGE PACKAGING STP20NM60 P20NM60 TO-220 TUBE STP20NM60FP P20NM60FP TO-220FP TUBE STB20NM60T4 B20NM60 D²PAK TAPE & REEL STB20NM60-1 B20NM60 I²PAK TUBE STW20NM60 W20NM60 TO-247 TUBE Rev.2 February 2005 1/15 STP20NM60 - STP20NM60FP - STB20NM60 - STW20NM60 - STB20NM60-1 Table 3: Absolute Maximum ratings Symbol Parameter Value TO-220/D²PAK/ I²PAK/TO-247 VDS VDGR VGS Unit TO-220FP Drain-source Voltage (VGS = 0) 600 V Drain-gate Voltage (RGS = 20 kΩ) 600 V Gate- source Voltage ±30 V ID Drain Current (continuous) at TC = 25°C 20 20 (*) A ID Drain Current (continuous) at TC = 100°C 12.6 12.6 (*) A Drain Current (pulsed) 80 80 (*) A Total Dissipation at TC = 25°C 192 45 W Derating Factor 1.2 0.36 W/°C IDM () PTOT dv/dt (1) Peak Diode Recovery voltage slope VISO Insulation Winthstand Voltage (DC) Tstg Storage Temperature Tj 15 -- V/ns 2500 Max. Operating Junction Temperature V -65 to 150 °C 150 °C () Pulse width limited by safe operating area (1) I SD ≤ 20 A, di/dt ≤ 400 A/µs, VDD ≤ V(BR)/DSS, Tj ≤ TJMAX (*) Limited only by maximum temperature allowed Table 4: Thermal Data TO-220/D²PAK/ I²PAK/TO-247 TO-220FP 0.65 2.8 Unit Rthj-case Thermal Resistance Junction-case Max Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W Maximum Lead Temperature For Soldering Purpose 300 °C Max. Value Unit 10 A 650 mJ Tl °C/W Table 5: Avalanche Characteristics Symbol Parameter IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) EAS Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED) Table 6: On/Off Symbol V(BR)DSS Parameter Drain-source Breakdown Voltage Test Conditions ID = 250 µA, VGS = 0 IDSS VDS = Max Rating Zero Gate Voltage Drain Current (VGS = 0) VDS= Max Rating, TC= 125°C IGSS Gate-body Leakage Current (VDS = 0) Typ. Gate Threshold Voltage VDS = VGS, ID = 250 µA RDS(on) Static Drain-source On Resistance VGS = 10V, ID = 10 A Max. 600 3 Unit V 1 10 µA µA ±100 µA 4 5 V 0.25 0.29 Ω VGS = ± 30V VGS(th) 2/15 Min. STP20NM60 - STP20NM60FP - STB20NM60 - STW20NM60 - STB20NM60-1 ELECTRICAL CHARACTERISTICS (CONTINUED) Table 7: Dynamic Symbol gfs (1) Parameter Test Conditions Forward Transconductance VDS > ID(on) x R DS(on)max, ID = 10 A Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. Typ. Max. Unit 11 S VDS = 25V, f = 1 MHz, VGS = 0 1500 350 35 pF pF pF Equivalent Output Capacitance VGS = 0V, VDS = 0V to 400 V 215 pF td(on) tr td(off) tf tc Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Cross-over Time VDD = 200 V, ID = 10 A RG = 4.7Ω VGS = 10 V (Resistive Load see, Figure 3) VDD = 480 V, ID = 20 A (See test circuit, Figure 5) 25 20 6 11 21 ns ns ns ns ns Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 400 V, ID = 20 A, VGS = 10V 39 10 20 Rg Gate Input Resistance f = 1 MHz Gate DC Bias = 0 Test Signal Level = 20 mV Open Drain 1.6 Ciss Coss Crss Coss eq. (3) 54 nC nC nC Ω Table 8: Source Drain Diode Symbol Parameter ISD ISDM (2) Source-drain Current Source-drain Current (pulsed) VSD (1) Forward On Voltage ISD = 20 A, VGS = 0 Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD =20 A, di/dt = 100 A/µs VDD = 100 V, Tj = 25°C (see test circuit, Figure 5) 390 5 25 ns µC A Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD =20 A, di/dt = 100 A/µs VDD = 100 V, Tj = 150°C (see test circuit, Figure 5) 510 6.5 26 ns µC A trr Qrr IRRM trr Qrr IRRM Test Conditions Min. Typ. Max. Unit 20 80 A A 1.5 V Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. 3. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS. 3/15 STP20NM60 - STP20NM60FP - STB20NM60 - STW20NM60 - STB20NM60-1 Figure 3: Safe Operating Area for TO-220/ D²PAK/I²PAK Figure 6: Thermal Impedance for TO-220/ D²PAK/I²PAK Figure 4: Safe Operating Area for TO-220FP Figure 7: Thermal Impedance for TO-220FP Figure 5: Safe Operating Area for TO-247 Figure 8: Thermal Impedance for TO-247 4/15 STP20NM60 - STP20NM60FP - STB20NM60 - STW20NM60 - STB20NM60-1 Figure 9: Output Characteristics Figure 12: Gate Charge vs Gate-source Voltage Figure 10: Transconductance Figure 13: Normalized Gate Threshold Voltage vs Temp. Figure 11: Transfer Characteristics Figure 14: Static Drain-source On Resistance 5/15 STP20NM60 - STP20NM60FP - STB20NM60 - STW20NM60 - STB20NM60-1 Figure 15: Capacitance Variations Figure 16: Normalized On Resistance vs Temperature 6/15 Figure 17: Source-drain Diode Forward Characteristics STP20NM60 - STP20NM60FP - STB20NM60 - STW20NM60 - STB20NM60-1 Figure 18: Unclamped Inductive Load Test Circuit Figure 21: Unclamped Inductive Wafeform Figure 19: Switching Times Test Circuit For Resistive Load Figure 22: Gate Charge Test Circuit Figure 20: Test Circuit For Inductive Load Switching and Diode Recovery Times 7/15 STP20NM60 - STP20NM60FP - STB20NM60 - STW20NM60 - STB20NM60-1 TO-220 MECHANICAL DATA DIM. mm. MIN. inch MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 b 0.61 0.88 0.024 0.034 b1 1.15 1.70 0.045 0.066 c 0.49 0.70 0.019 0.027 D 15.25 15.75 0.60 0.620 E 10 10.40 0.393 0.409 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 F 1.23 1.32 0.048 0.052 H1 6.20 6.60 0.244 0.256 J1 2.40 2.72 0.094 0.107 0.551 L 13 14 0.511 L1 3.50 3.93 0.137 L20 16.40 L30 8/15 TYP 0.154 0.645 28.90 1.137 øP 3.75 3.85 0.147 0.151 Q 2.65 2.95 0.104 0.116 STP20NM60 - STP20NM60FP - STB20NM60 - STW20NM60 - STB20NM60-1 TO-220FP MECHANICAL DATA mm. DIM. MIN. A 4.4 inch TYP MAX. MIN. TYP. 4.6 0.173 0.181 MAX. 0.106 B 2.5 2.7 0.098 D 2.5 2.75 0.098 0.108 E 0.45 0.7 0.017 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.7 0.045 0.067 F2 1.15 1.7 0.045 0.067 G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 0.409 L2 16 0.630 L3 28.6 30.6 1.126 1.204 L4 9.8 10.6 .0385 0.417 L5 2.9 3.6 0.114 0.141 L6 15.9 16.4 0.626 0.645 9 9.3 0.354 0.366 Ø 3 3.2 0.118 0.126 B D A E L7 L3 L6 F2 H G G1 F F1 L7 L2 L5 1 2 3 L4 9/15 STP20NM60 - STP20NM60FP - STB20NM60 - STW20NM60 - STB20NM60-1 TO-263 (D 2PAK) MECHANICAL DATA mm. inch DIM. MAX. MIN. A 4.32 MIN. 4.57 0.178 0.180 A1 0.00 0.25 0.00 0.009 TYP. MAX. b 0.71 0.91 0.028 0.350 b2 1.15 1.40 0.045 0.055 c 0.46 0.61 0.018 0.024 c2 1.22 1.40 0.048 0.055 D 8.89 9.40 0.350 D1 8.01 E 10.04 e 10/15 TYP 9.02 0.355 0.370 0.315 10.28 0.395 2.54 0.404 0.010 H 13.10 13.70 0.515 0.540 L 1.30 1.70 0.051 0.067 L1 1.15 1.39 0.045 0.054 L2 1.27 1.77 0.050 0.069 L4 2.70 3.10 0.106 0.122 V2 0° 8° 0° 8° STP20NM60 - STP20NM60FP - STB20NM60 - STW20NM60 - STB20NM60-1 TO-262 (I2PAK) MECHANICAL DATA mm. inch DIM. MIN. TYP MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 A1 2.40 2.72 0.094 0.107 b 0.61 0.88 0.024 0.034 b1 1.14 1.70 0.044 0.066 c 0.49 0.70 0.019 0.027 c2 1.23 1.32 0.048 0.052 D 8.95 9.35 0.352 0.368 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 E 10 10.40 0.393 0.410 L 13 14 0.511 0.551 L1 3.50 3.93 0.137 0.154 L2 1.27 1.40 0.050 0.055 11/15 STP20NM60 - STP20NM60FP - STB20NM60 - STW20NM60 - STB20NM60-1 D2PAK FOOTPRINT TUBE SHIPMENT (no suffix)* TAPE AND REEL SHIPMENT (suffix ”T4”)* REEL MECHANICAL DATA DIM. mm MIN. A B 1.5 C 12.8 D 20.2 G 24.4 N 100 T TAPE MECHANICAL DATA DIM. mm MIN. MAX. MIN. A0 10.5 10.7 0.413 0.421 B0 15.7 15.9 0.618 0.626 D 1.5 1.6 0.059 0.063 D1 1.59 1.61 0.062 0.063 E 1.65 1.85 0.065 0.073 F 11.4 11.6 0.449 0.456 K0 4.8 5.0 0.189 0.197 P0 3.9 4.1 0.153 0.161 P1 11.9 12.1 0.468 0.476 P2 1.9 2.1 0.075 0.082 MAX. R 50 1.574 T 0.25 0.35 0.0098 0.0137 W 23.7 24.3 * on sales type 12/15 inch 0.933 0.956 inch MAX. MIN. MAX. 330 12.992 13.2 0.504 0.520 26.4 0.960 1.039 0.059 0795 3.937 30.4 1.197 BASE QTY BULK QTY 1000 1000 STP20NM60 - STP20NM60FP - STB20NM60 - STW20NM60 - STB20NM60-1 TO-247 MECHANICAL DATA DIM. mm. MIN. TYP inch MAX. MIN. TYP. MAX. A 4.85 5.15 0.19 0.20 A1 2.20 2.60 0.086 0.102 b 1.0 1.40 0.039 0.055 b1 2.0 2.40 0.079 0.094 0.134 b2 3.0 3.40 0.118 c 0.40 0.80 0.015 0.03 D 19.85 20.15 0.781 0.793 E 15.45 15.75 0.608 e 5.45 L 14.20 14.80 0.560 L1 3.70 4.30 0.14 L2 0.620 0.214 18.50 0.582 0.17 0.728 øP 3.55 3.65 0.140 0.143 øR 4.50 5.50 0.177 0.216 S 5.50 0.216 13/15 STP20NM60 - STP20NM60FP - STB20NM60 - STW20NM60 - STB20NM60-1 Table 9: Revision History Date Revision 26-Jul-2004 17-Feb-2005 1 2 14/15 Description of Changes First Release Insert the TO-247 package STP20NM60 - STP20NM60FP - STB20NM60 - STW20NM60 - STB20NM60-1 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics All other names are the property of their respective owners © 2005 STMicroelectronics - All Rights Reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America 15/15