STMICROELECTRONICS STW25NM50N

STP25NM50N - STF25NM50N
STB25NM50N/-1 - STW25NM50N
N-CHANNEL 500V 0.11 Ω - 22 A TO-220/FP/D²/I²PAK/TO-247
SECOND GENERATION MDmesh™ MOSFET
Table 1: General Features
Figure 1: Package
TYPE
VDSS (@TjMAX)
ID
STB25NM50N-1
STF25NM50N
STP25NM50N
STW25NM50N
STB25NM50N
550V
550V
550V
550V
550V
22 A
22 A(*)
22 A
22 A
22 A
■
■
■
■
RDS(on)
0.140
0.140
0.140
0.140
0.140
Ω
Ω
Ω
Ω
Ω
3
1
TO-220
HIGH dv/dt AND AVALANCHE CAPABILITIES
100% AVALANCHE TESTED
LOW INPUT CAPACITANCE AND GATE
CHARGE
LOW GATE INPUT RESISTANCE
I²PAK
3
1
D²PAK
3
3
2
1
1
TO-247
DESCRIPTION
The STx25NM50N is realized with the second
generation of MDmesh Technology. This revolutionary MOSFET associates a new vertical structure to the Company's strip layout to yield one of
the world's lowest on-resistance and gate charge.
It is therefore suitable for the most demanding high
efficiency converters
3
12
2
2
TO-220FP
Figure 2: Internal Schematic Diagram
APPLICATIONS
The MDmesh™ II family is very suitable for increasing power density of high voltage converters
allowing system miniaturization and higher efficiencies.
Table 2: Order Codes
SALES TYPE
MARKING
PACKAGE
PACKAGING
STP25NM50N
P25NM50N
TO-220
TUBE
STF25NM50N
F25NM50N
TO-220FP
TUBE
STB25NM50N-1
B25NM50N
I²PAK
TUBE
STW25NM50N
W25NM50N
TO-247
TUBE
STB25NM50N
B25NM50N
D²PAK
TAPE & REEL
Rev. 9
October 2005
1/16
STP25NM50N - STF25NM50N - STB25NM50N/-1 - STW25NM50N
Table 3: Absolute Maximum ratings
Symbol
Parameter
Value
TO-220/D²PAK/I²PAK/
TO-247
VDS
VDGR
VGS
Unit
TO-220FP
Drain-source Voltage (VGS = 0)
500
V
Drain-gate Voltage (RGS = 20 kΩ)
500
V
Gate- source Voltage
±25
V
ID
Drain Current (continuous) at TC = 25°C
22
22(*)
A
ID
Drain Current (continuous) at TC = 100°C
14
14 (*)
A
Drain Current (pulsed)
88
88 (*)
A
IDM ( )
PTOT
dv/dt(1)
Tstg
Tj
Total Dissipation at TC = 25°C
160
40
W
Derating Factor
1.28
0.32
W/°C
Peak Diode Recovery voltage slope
Storage Temperature
Max. Operating Junction Temperature
15
V/ns
–55 to 150
°C
150
°C
( ) Pulse width limited by safe operating area
(1) ISD ≤ 22 A, di/dt ≤ 400 A/µs, VDD =80% V(BR)DSS.
(*) Limited only by maximum temperature allowed
Table 4: Thermal Data
TO-220/D²PAK/I²PAK/
TO-247
TO-220FP
0.78
3.1
Rthj-case
Thermal Resistance Junction-case Max
°C/W
Rthj-amb
Thermal Resistance Junction-ambient Max
62.5
°C/W
Tl
Maximum Lead Temperature For Soldering
Purpose
300
°C
Max Value
Unit
Table 5: Avalanche Characteristics
Symbol
2/16
Parameter
IAS
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
10
A
EAS
Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID = IAS, VDD = 50 V)
350
mJ
STB25NM50N/-1 - STW25NM50N - STP25NM50N - STF25NM50N
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
Table 6: On/Off
Symbol
Parameter
Test Conditions
Value
Min.
Unit
Typ.
Max.
V(BR)DSS
Drain-source
Breakdown Voltage
ID = 1mA, VGS = 0
500
V
dv/dt(2)
Drain Source Voltage
Slope
Vdd=400V, Id=25A,
Vgs=10V
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating,
TC = 125 °C
1
10
µA
µA
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 20V
100
nA
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 µA
3
4
V
RDS(on)
Static Drain-source On
Resistance
VGS = 10V, ID = 11 A
0.110
0.140
Ω
44
2
V/ns
(2) Characteristic value at turn off on inductive load
Table 7: Dynamic
Symbol
gfs (1)
Ciss
Coss
Crss
Coss eq. (*)
Parameter
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
Min.
VDS=15 V, ID =11 A
VDS = 25V, f = 1 MHz, VGS = 0
Typ.
Max.
Unit
19
S
2565
511
77
pF
pF
pF
Equivalent Output
Capacitance
VGS = 0V, VDS = 0V to 400V
315
pF
td(on)
tr
td(off)
tf
Turn-on Delay Time
Rise Time
Off-voltageRise Time
Fall Time
VDD =250 V, ID = 11A
RG = 4.7Ω VGS = 10 V
(see Figure 19)
23
23
75
22
ns
ns
ns
ns
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 400V, ID =22 A,
VGS = 10V,
(see Figure 23)
84
11
35
nC
nC
nC
Rg
Gate Input Resistance
f=1MHz Gate DC Bias=0
Test Signal Level=20mV
Open Drain
1.6
Ω
Table 8: Source Drain Diode
Symbol
Parameter
ISD
ISDM ( )
Source-drain Current
Source-drain Current (pulsed)
VSD (1)
Forward On Voltage
ISD = 22 A, VGS = 0
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 22A, di/dt = 100 A/µs
VDD = 100 V, Tj = 25°C
(see Figure 21)
460
6.9
30
ns
µC
A
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 22 A, di/dt = 100 A/µs
VDD = 100 V, Tj = 150°C
(see Figure 21)
532
8.25
31
ns
µC
A
trr
Qrr
IRRM
trr
Qrr
IRRM
Test Conditions
Min.
Typ.
Max.
Unit
22
88
A
A
1.3
V
(1) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(*) Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDS
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STP25NM50N - STF25NM50N - STB25NM50N/-1 - STW25NM50N
Figure 3: Safe Operating Area For TO-220/
I²PAK/D²PAK
Figure 6: Thermal Impedance TO-220/I²PAK/
D²PAK
Figure 4: Safe Operating Area For TO-220FP
Figure 7: Thermal Impedance For TO-220FP
Figure 5: Safe Operating Area For TO-247
Figure 8: Thermal Impedance For TO-247
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STB25NM50N/-1 - STW25NM50N - STP25NM50N - STF25NM50N
Figure 9: Output Characteristics
Figure 12: Transfer Characteristics
Figure 10: Transconductance
Figure 13: Static Drain-Source On Resistance
Figure 11: Gate Charge vs Gate-source Voltage
Figure 14: Capacitance Variations
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STP25NM50N - STF25NM50N - STB25NM50N/-1 - STW25NM50N
Figure 15: Normalized Gate Threshold Voltage
vs Temperature
Figure 17: Normalized On Resistance vs Temperature
Figure 16: Source-Drain Forward Characteristics
Figure 18: Normalized BVDSS vs Temperature
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STB25NM50N/-1 - STW25NM50N - STP25NM50N - STF25NM50N
Figure 19: Unclamped Inductive Load Test Circuit
Figure 22: Unclamped Inductive Wafeform
Figure 20: Switching Times Test Circuit For
Resistive Load
Figure 23: Gate Charge Test Circuit
Figure 21: Test Circuit For Inductive Load
Switching and Diode Recovery Times
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STP25NM50N - STF25NM50N - STB25NM50N/-1 - STW25NM50N
In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These
packages have a Lead-free second level interconnect . The category of second level interconnect is
marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The
maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an
ST trademark. ECOPACK specifications are available at: www.st.com
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STB25NM50N/-1 - STW25NM50N - STP25NM50N - STF25NM50N
D2PAK FOOTPRINT
TAPE AND REEL SHIPMENT
REEL MECHANICAL DATA
DIM.
mm
MIN.
A
DIM.
mm
inch
MIN.
MAX.
MIN.
MAX.
A0
10.5
10.7
0.413
0.421
B0
15.7
15.9
0.618
0.626
D
1.5
1.6
0.059
0.063
D1
1.59
1.61
0.062
0.063
E
1.65
1.85
0.065
0.073
F
11.4
11.6
0.449
0.456
K0
4.8
5.0
0.189
0.197
P0
3.9
4.1
0.153
0.161
P1
11.9
12.1
0.468
0.476
P2
1.9
2.1
0.075
0.082
R
50
T
0.25
0.35
W
23.7
24.3
MIN.
330
B
1.5
C
12.8
D
20.2
G
24.4
N
100
T
TAPE MECHANICAL DATA
inch
MAX.
MAX.
12.992
0.059
13.2
0.504
0.520
0795
26.4
0.960
1.039
3.937
30.4
1.197
BASE QTY
BULK QTY
1000
1000
1.574
0.0098 0.0137
0.933
0.956
* on sales type
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STP25NM50N - STF25NM50N - STB25NM50N/-1 - STW25NM50N
TO-220 MECHANICAL DATA
DIM.
mm.
MIN.
inch
MAX.
MIN.
TYP.
MAX.
A
4.40
4.60
0.173
0.181
b
0.61
0.88
0.024
0.034
b1
1.15
1.70
0.045
0.066
c
0.49
0.70
0.019
0.027
D
15.25
15.75
0.60
0.620
E
10
10.40
0.393
0.409
e
2.40
2.70
0.094
0.106
e1
4.95
5.15
0.194
0.202
F
1.23
1.32
0.048
0.052
H1
6.20
6.60
0.244
0.256
J1
2.40
2.72
0.094
0.107
0.551
L
13
14
0.511
L1
3.50
3.93
0.137
L20
16.40
L30
10/16
TYP
0.154
0.645
28.90
1.137
øP
3.75
3.85
0.147
0.151
Q
2.65
2.95
0.104
0.116
STB25NM50N/-1 - STW25NM50N - STP25NM50N - STF25NM50N
TO-220FP MECHANICAL DATA
mm.
DIM.
MIN.
A
4.4
inch
TYP
MAX.
MIN.
TYP.
4.6
0.173
0.181
MAX.
0.106
B
2.5
2.7
0.098
D
2.5
2.75
0.098
0.108
E
0.45
0.7
0.017
0.027
F
0.75
1
0.030
0.039
F1
1.15
1.7
0.045
0.067
F2
1.15
1.7
0.045
0.067
G
4.95
5.2
0.195
0.204
G1
2.4
2.7
0.094
0.106
H
10
10.4
0.393
0.409
L2
16
0.630
L3
28.6
30.6
1.126
1.204
L4
9.8
10.6
.0385
0.417
L5
2.9
3.6
0.114
0.141
L6
15.9
16.4
0.626
0.645
9
9.3
0.354
0.366
Ø
3
3.2
0.118
0.126
B
D
A
E
L7
L3
L6
F2
H
G
G1
F
F1
L7
L2
L5
1 2 3
L4
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STP25NM50N - STF25NM50N - STB25NM50N/-1 - STW25NM50N
TO-247 MECHANICAL DATA
DIM.
mm.
MIN.
inch
MAX.
MIN.
TYP.
MAX.
A
4.85
5.15
0.19
0.20
A1
2.20
2.60
0.086
0.102
b
1.0
1.40
0.039
0.055
b1
2.0
2.40
0.079
0.094
0.134
b2
3.0
3.40
0.118
c
0.40
0.80
0.015
0.03
D
19.85
20.15
0.781
0.793
E
15.45
15.75
0.608
e
5.45
0.620
0.214
L
14.20
14.80
0.560
L1
3.70
4.30
0.14
L2
18.50
0.582
0.17
0.728
øP
3.55
3.65
0.140
0.143
øR
4.50
5.50
0.177
0.216
S
12/16
TYP
5.50
0.216
STB25NM50N/-1 - STW25NM50N - STP25NM50N - STF25NM50N
TO-262 (I2PAK) MECHANICAL DATA
mm.
inch
DIM.
MIN.
TYP
MAX.
MIN.
TYP.
MAX.
A
4.40
4.60
0.173
0.181
A1
2.40
2.72
0.094
0.107
b
0.61
0.88
0.024
0.034
b1
1.14
1.70
0.044
0.066
c
0.49
0.70
0.019
0.027
c2
1.23
1.32
0.048
0.052
D
8.95
9.35
0.352
0.368
e
2.40
2.70
0.094
0.106
e1
4.95
5.15
0.194
0.202
E
10
10.40
0.393
0.410
L
13
14
0.511
0.551
L1
3.50
3.93
0.137
0.154
L2
1.27
1.40
0.050
0.055
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STP25NM50N - STF25NM50N - STB25NM50N/-1 - STW25NM50N
D2PAK MECHANICAL DATA
TO-247 MECHANICAL DATA
mm.
inch
DIM.
MAX.
MIN.
A
MIN.
4.4
4.6
0.173
0.181
A1
2.49
2.69
0.098
0.106
A2
0.03
0.23
0.001
0.009
B
0.7
0.93
0.027
0.036
B2
1.14
1.7
0.044
0.067
C
0.45
0.6
0.017
0.023
C2
1.23
1.36
0.048
0.053
D
8.95
9.35
0.352
D1
E
TYP
8
10
E1
TYP.
MAX.
0.368
0.315
10.4
0.393
8.5
0.334
G
4.88
5.28
0.192
0.208
L
15
15.85
0.590
0.625
L2
1.27
1.4
0.050
0.055
L3
1.4
1.75
0.055
0.068
M
2.4
3.2
0.094
0.126
R
0.4
0º
0.015
4º
3
V2
1
14/16
STB25NM50N/-1 - STW25NM50N - STP25NM50N - STF25NM50N
Table 9: Revision History
Date
Revision
30-Nov-2004
08-Mar-2005
22-Mar-2005
13-Apr-2005
28-Apr-2005
16-May-2005
17-Jun-2005
07-Sep-2005
05-Oct-2005
1
2
3
4
5
6
7
8
9
Description of Changes
First Release.
Inserted Curves
Modified title
Modified some values
Modified some values in Table 8
Modified values in tab7
Inserted new row in table 6
Inserted ecopack indication
Modified curves 9-12
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STP25NM50N - STF25NM50N - STB25NM50N/-1 - STW25NM50N
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
All other names are the property of their respective owners
© 2005 STMicroelectronics - All Rights Reserved
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