STMICROELECTRONICS STW25NM60N

STP25NM60N - STF25NM60N
STB25NM60N/-1 - STW25NM60N
N-CHANNEL 600V 0.140Ω-20A TO-220/FP/D²/I²PAK/TO-247
SECOND GENERATION MDmesh™ MOSFET
PRODUCT PREVIEW
Table 1: General Features
Figure 1: Package
TYPE
VDSS
(@Tjmax)
RDS(on)
ID
STB25NM60N-1
STF25NM60N
STP25NM60N
STW25NM60N
STB25NM60N
650 V
650 V
650 V
650 V
650 V
< 0.170 Ω
< 0.170 Ω
< 0.170 Ω
< 0.170 Ω
< 0.170 Ω
20 A
20(*) A
20 A
20 A
20 A
■
■
■
■
■
■
WORLD’S LOWEST ON RESISTANCE
TYPICAL RDS(on) = 0.140 Ω
HIGH dv/dt AND AVALANCHE CAPABILITIES
100% AVALANCHE TESTED
LOW INPUT CAPACITANCE AND GATE
CHARGE
LOW GATE INPUT RESISTANCE
3
3
1
2
1
2
TO-220
TO-220FP
3
1
D²PAK
3
12
3
2
I²PAK
1
TO-247
Figure 2: Internal Schematic Diagram
DESCRIPTION
The STP25NM60N is realized with the second
generation of MDmesh Technology. This revolutionary MOSFET associates a new vertical structure to the Company's strip layout to yield the
world's lowest on-resistance and gate charge. It is
therefore suitable for the most demanding high efficiency converters
APPLICATIONS
The MDmesh™ II family is very suitable for increase the power density of high voltage converters allowing system miniaturization and higher
efficiencies.
Table 2: Order Code
SALES TYPE
MARKING
PACKAGE
PACKAGING
STB25NM60N-1
B25NM60N
I²PAK
TUBE
STF25NM60N
F25NM60N
TO-220FP
TUBE
STP25NM60N
P25NM60N
TO-220
TUBE
STW25NM60N
W25NM60N
TO-247
TUBE
STB25NM60N
B25NM60N
D²PAK
TAPE & REEL
Rev. 4
June 2005
This is preliminary information on a new product now in development. Details are subject to change without notice.
1/12
STP25NM60N - STF25NM60N - STB25NM60N/-1 - STW25NM60N
Table 3: Absolute Maximum ratings
Symbol
Parameter
Value
TO-220/I²PAK
TO-247/D²PAK
VDS
VDGR
VGS
Drain-source Voltage (VGS = 0)
Unit
TO-220FP
600
V
Drain-gate Voltage (RGS = 20 kΩ)
600
V
Gate- source Voltage
± 25
V
ID
Drain Current (continuous) at TC = 25°C
20
20 (*)
A
ID
Drain Current (continuous) at TC = 100°C
12.8
12.8 (*)
A
80
80 (*)
A
IDM (1)
PTOT
dv/dt (2)
Tstg
Tj
Drain Current (pulsed)
Total Dissipation at TC = 25°C
160
40
W
Derating Factor
1.28
0.32
W/°C
Peak Diode Recovery voltage slope
Storage Temperature
Max. Operating Junction Temperature
TBD
V/ns
– 55 to 150
°C
150
°C
(*) Limited only by maximum temperature allowed
(1) Pulse width limited by safe operating area
(2) ISD ≤ 20 A, di/dt ≤ 400 A/µs, VDD =80%V(BR)DSS.
Table 4: Thermal Data
TO-220/I²PAK
TO-247/D²PAK
TO-220FP
0.78
3.1
Rthj-case
Thermal Resistance Junction-case Max
Rthj-amb
Thermal Resistance Junction-ambient Max
62.5
°C/W
Maximum Lead Temperature For Soldering Purpose
300
°C
Tl
°C/W
Table 5: Avalanche Characteristics
Symbol
Max Value
Unit
IAS
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
Parameter
TBD
A
EAS
Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID = IAS, VDD = 50 V)
TBD
mJ
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
Table 6: On /Off
Symbol
Parameter
Test Conditions
Value
Min.
Typ.
Unit
Max.
Drain-source Breakdown
Voltage
ID = 1 mA, VGS = 0
Drain Source Voltage
Slope
Vdd=TBD, Id=TBD, Vgs=TBD
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating, TC = 125°C
1
10
µA
µA
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 20 V
100
nA
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 µA
RDS(on
Static Drain-source On
Resistance
VGS = 10 V, ID = 10 A
V(BR)DSS
dv/dt(2)
(2) Characteristic value at turn off on inductive load
2/12
600
V
TBD
2
V/ns
3
4
V
0.140
0.170
Ω
STP25NM60N - STF25NM60N - STB25NM60N/-1 - STW25NM60N
ELECTRICAL CHARACTERISTICS (CONTINUED)
Table 7: Dynamic
Symbol
gfs (1)
Parameter
Test Conditions
Max.
Unit
VDS = 25 V, f = 1 MHz,
VGS = 0
2565
511
77
pF
pF
pF
Equivalent Output
Capacitance
VGS = 0 V, VDS = 0 to 480 V
TBD
pF
Gate Input Resistance
f=1 MHz Gate DC Bias = 0
Test Signal Level = 20mV
Open Drain
2
Ω
td(on)
tr
td(off)
tf
Turn-on Delay Time
Rise Time
Turn-off-Delay Time
Fall Time
VDD = 300 V, ID = 10 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 4)
TBD
TBD
TBD
TBD
ns
ns
ns
ns
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 480 V, ID = 20 A,
VGS = 10 V
(see Figure 7)
93
TBD
TBD
nC
nC
nC
RG
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Typ.
S
COSS eq (3).
VDS = 15V , ID= 10A
Min.
17
Ciss
Coss
Crss
Forward Transconductance
Table 8: Source Drain Diode
Symbol
Parameter
ISD
ISDM (2)
Source-drain Current
Source-drain Current (pulsed)
VSD (1)
Forward On Voltage
ISD = 20 A, VGS = 0
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 25 A, di/dt = 100 A/µs
VDD = 100V
(see Figure 5)
TBD
TBD
TBD
ns
µC
A
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 25 A, di/dt = 100 A/µs
VDD = 100V, Tj = 150°C
(see Figure 5)
TBD
TBD
TBD
ns
µC
A
trr
Qrr
IRRM
trr
Qrr
IRRM
Test Conditions
Min.
Typ.
Max.
Unit
20
80
A
A
1.3
V
(1) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(2) Pulse width limited by safe operating area.
(3) Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS.
3/12
STP25NM60N - STF25NM60N - STB25NM60N/-1 - STW25NM60N
Figure 3: Unclamped Inductive Load Test Circuit
Figure 6: Unclamped Inductive Wafeform
Figure 4: Switching Times Test Circuit For Resistive Load
Figure 7: Gate Charge Test Circuit
Figure 5: Test Circuit For Inductive Load
Switching and Diode Recovery Times
4/12
STP25NM60N - STF25NM60N - STB25NM60N/-1 - STW25NM60N
TO-220 MECHANICAL DATA
DIM.
mm.
MIN.
TYP
inch
MAX.
MIN.
TYP.
MAX.
A
4.40
4.60
0.173
0.181
b
0.61
0.88
0.024
0.034
b1
1.15
1.70
0.045
0.066
c
0.49
0.70
0.019
0.027
D
15.25
15.75
0.60
0.620
E
10
10.40
0.393
0.409
e
2.40
2.70
0.094
0.106
e1
4.95
5.15
0.194
0.202
F
1.23
1.32
0.048
0.052
H1
6.20
6.60
0.244
0.256
J1
2.40
2.72
0.094
0.107
0.551
L
13
14
0.511
L1
3.50
3.93
0.137
L20
16.40
L30
0.154
0.645
28.90
1.137
øP
3.75
3.85
0.147
0.151
Q
2.65
2.95
0.104
0.116
5/12
STP25NM60N - STF25NM60N - STB25NM60N/-1 - STW25NM60N
TO-220FP MECHANICAL DATA
mm.
DIM.
MIN.
A
4.4
inch
TYP
MAX.
MIN.
TYP.
4.6
0.173
0.181
MAX.
0.106
B
2.5
2.7
0.098
D
2.5
2.75
0.098
0.108
E
0.45
0.7
0.017
0.027
F
0.75
1
0.030
0.039
F1
1.15
1.7
0.045
0.067
F2
1.15
1.7
0.045
0.067
G
4.95
5.2
0.195
0.204
G1
2.4
2.7
0.094
0.106
H
10
10.4
0.393
0.409
L2
16
0.630
L3
28.6
30.6
1.126
1.204
L4
9.8
10.6
.0385
0.417
L5
2.9
3.6
0.114
0.141
L6
15.9
16.4
0.626
0.645
9
9.3
0.354
0.366
Ø
3
3.2
0.118
0.126
B
D
A
E
L7
L3
L6
F2
H
G
G1
F
F1
L7
L2
6/12
L5
1 2 3
L4
STP25NM60N - STF25NM60N - STB25NM60N/-1 - STW25NM60N
TO-262 (I2PAK) MECHANICAL DATA
mm.
inch
DIM.
MIN.
TYP
MAX.
MIN.
TYP.
MAX.
A
4.40
4.60
0.173
0.181
A1
2.40
2.72
0.094
0.107
b
0.61
0.88
0.024
0.034
b1
1.14
1.70
0.044
0.066
c
0.49
0.70
0.019
0.027
c2
1.23
1.32
0.048
0.052
D
8.95
9.35
0.352
0.368
e
2.40
2.70
0.094
0.106
e1
4.95
5.15
0.194
0.202
E
10
10.40
0.393
0.410
L
13
14
0.511
0.551
L1
3.50
3.93
0.137
0.154
L2
1.27
1.40
0.050
0.055
7/12
STP25NM60N - STF25NM60N - STB25NM60N/-1 - STW25NM60N
TO-247 MECHANICAL DATA
DIM.
mm.
MIN.
inch
MAX.
MIN.
TYP.
MAX.
A
4.85
5.15
0.19
0.20
A1
2.20
2.60
0.086
0.102
b
1.0
1.40
0.039
0.055
b1
2.0
2.40
0.079
0.094
0.134
b2
3.0
3.40
0.118
c
0.40
0.80
0.015
0.03
D
19.85
20.15
0.781
0.793
E
15.45
15.75
0.608
e
5.45
0.620
0.214
L
14.20
14.80
0.560
L1
3.70
4.30
0.14
L2
18.50
0.582
0.17
0.728
øP
3.55
3.65
0.140
0.143
øR
4.50
5.50
0.177
0.216
S
8/12
TYP
5.50
0.216
STP25NM60N - STF25NM60N - STB25NM60N/-1 - STW25NM60N
TO-252 (DPAK) MECHANICAL DATA
mm
DIM.
MIN.
TYP.
inch
MAX.
MIN.
A
2.20
2.40
0.087
TYP.
MAX.
0.094
A1
0.90
1.10
0.035
0.043
A2
0.03
0.23
0.001
0.009
B
0.64
0.90
0.025
0.035
B2
5.20
5.40
0.204
0.213
C
0.45
0.60
0.018
0.024
C2
0.48
0.60
0.019
0.024
D
6.00
6.20
0.236
0.244
E
6.40
6.60
0.252
0.260
G
4.40
4.60
0.173
0.181
H
9.35
10.10
0.368
L2
0.8
0.398
0.031
L4
0.60
1.00
0.024
0.039
V2
0o
8o
0o
0o
P032P_B
9/12
STP25NM60N - STF25NM60N - STB25NM60N/-1 - STW25NM60N
D2PAK FOOTPRINT
TAPE AND REEL SHIPMENT
REEL MECHANICAL DATA
DIM.
mm
MIN.
A
DIM.
mm
MIN.
MAX.
MIN.
MAX.
A0
10.5
10.7
0.413
0.421
B0
15.7
15.9
0.618
0.626
D
1.5
1.6
0.059
0.063
D1
1.59
1.61
0.062
0.063
E
1.65
1.85
0.065
0.073
F
11.4
11.6
0.449
0.456
K0
4.8
5.0
0.189
0.197
P0
3.9
4.1
0.153
0.161
P1
11.9
12.1
0.468
0.476
P2
1.9
2.1
0.075
0.082
R
50
T
0.25
0.35
W
23.7
24.3
* on sales type
10/12
inch
1.574
0.0098 0.0137
0.933
0.956
MIN.
330
B
1.5
C
12.8
D
20.2
G
24.4
N
100
T
TAPE MECHANICAL DATA
inch
MAX.
MAX.
12.992
0.059
13.2
0.504
0.520
0795
26.4
0.960
1.039
3.937
30.4
1.197
BASE QTY
BULK QTY
1000
1000
STP25NM60N - STF25NM60N - STB25NM60N/-1 - STW25NM60N
Table 9: Revision History
Date
Revision
30-Nov-2004
22-Mar-2005
23-May-2005
08-Jun-2005
1
2
3
4
Description of Changes
First Release.
Modified title
Inserted some values in Tab7
Inserted new row in table 6
11/12
STP25NM60N - STF25NM60N - STB25NM60N/-1 - STW25NM60N
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by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
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