STP21NM60N-STF21NM60N-STW21NM60N STB21NM60N - STB21NM60N-1 N-CHANNEL 600V - 0.19 Ω - 17 A TO-220/FP/D²/I²PAK/TO-247 SECOND GENERATION MDmesh™ MOSFET Table 1: General Features TYPE STB21NM60N STB21NM60N-1 STF21NM60N STP21NM60N STW21NM60N ■ ■ ■ Figure 1: Package VDSS RDS(on) 660 660 660 660 660 < < < < < V V V V V 0.24 0.24 0.24 0.24 0.24 Ω Ω Ω Ω Ω ID 17 A 17 A 17 A (*) 17 A 17 A 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE CHARGE LOW GATE INPUT RESISTANCE DESCRIPTION The STx21NM60N is realized with the second generation of MDmesh Technology. This revolutionary MOSFET associates a new vertical structure to the Company's strip layout to yield one of the world's lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters 3 1 3 3 1 2 TO-220 1 D²PAK 2 TO-220FP 3 12 3 I²PAK 2 1 TO-247 Figure 2: Internal Schematic Diagram APPLICATIONS The MDmesh™ II family is very suitable for increasing power density of high voltage converters allowing system miniaturization and higher efficiencies. Table 2: Order Codes SALES TYPE MARKING PACKAGE PACKAGING STB21NM60N B21NM60N D2PAK TAPE & REEL STB21NM60N-1 B21NM60N I2PAK TUBE STF21NM60N F21NM60N TO-220FP TUBE STP21NM60N P21NM60N TO-220 TUBE STW21NM60N W21NM60N TO-247 TUBE Rev.3 October 2005 1/16 STP21NM60N - STF21NM60N - STB21NM60N - STB21NM60N-1 - STW21NM60N Table 3: Absolute Maximum ratings Symbol Parameter Value TO-220 / D2PAK / I2PAK / TO-247 VDS VDGR VGS Unit TO-220FP Drain-source Voltage (VGS = 0) 600 V Drain-gate Voltage (RGS = 20 kΩ) 600 V Gate- source Voltage ±25 V ID Drain Current (continuous) at TC = 25°C 17 17 (*) A ID Drain Current (continuous) at TC = 100°C 10 10 (*) A Drain Current (pulsed) 64 64 (*) A Total Dissipation at TC = 25°C 140 30 W Derating Factor 1.12 0.23 W/°C IDM ( ) PTOT dv/dt(1) Peak Diode Recovery voltage slope Viso Insulation Winthstand Voltage (DC) Tstg Storage Temperature Tj 15 -- V/ns 2500 –55 to 150 150 Max. Operating Junction Temperature V °C ( ) Pulse width limited by safe operating area (*) Limited only by maximum temperature allowed (1) ISD ≤ 16 A, di/dt ≤ 400 A/µs, VDD=80% V(BR)DSS Table 4: Thermal Data TO-220 / D²PAK / I²PAK / TO-247 TO-220FP 0.89 4.21 Rthj-case Thermal Resistance Junction-case Max Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W °C/W Tl Maximum Lead Temperature For Soldering Purpose 300 °C Max Value Unit Table 5: Avalanche Characteristics Symbol 2/16 Parameter IAS Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) 8.5 A EAS Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAS, VDD = 50 V) 610 mJ STP21NM60N - STF21NM60N - STB21NM60N - STB21NM60N-1 - STW21NM60N ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED) Table 6: On/Off Symbol Parameter Test Conditions Value Min. Typ. Unit Max. V(BR)DSS Drain-source Breakdown Voltage ID = 1mA, VGS = 0 600 V dv/dt(2) Drain Source Voltage Slope Vdd=480V, Id=17A, Vgs=10V IDSS Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating VDS = Max Rating, TC = 125 °C 1 10 µA µA IGSS Gate-body Leakage Current (VDS = 0) VGS = ± 20V 100 nA VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA RDS(on) Static Drain-source On Resistance VGS = 10V, ID = 8.5 A 48 2 V/ns 3 4 V 0.190 0.24 Ω Typ. Max. Unit (2) Characteristic value at turn off on inductive load Table 7: Dynamic Symbol gfs (1) Ciss Coss Crss Coss eq. (*) Parameter Test Conditions Min. Forward Transconductance VDS = 15 V, ID = 8 A Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25V, f = 1 MHz, VGS = 0 12 S 1950 508 38.4 pF pF pF Equivalent Output Capacitance VGS = 0V, VDS = 0V to 400V 282 pF td(on) tr td(off) tf Turn-on Delay Time Rise Time Off-voltageRise Time Fall Time VDD =300 V, ID = 8.5 A RG = 4.7Ω VGS = 10 V (see Figure 20) 22 15 84 31 ns ns ns ns Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 480V, ID = 17 A, VGS = 10V, (see Figure 23) 66.6 9.9 33 nC nC nC Rg Gate Input Resistance f=1MHz Gate DC Bias=0 Test Signal Level=20mV Open Drain 2 Ω (*) Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS Table 8: Source Drain Diode Symbol Parameter ISD ISDM Source-drain Current Source-drain Current (pulsed) VSD (1) trr Qrr IRRM trr Qrr IRRM Test Conditions Min. Typ. Max. Unit 16 64 A A 1.3 V Forward On Voltage ISD = 17 A, VGS = 0 Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 17 A, di/dt = 100 A/µs VDD = 100 V, Tj = 25°C (see Figure 21) 372 4.6 25 ns µC A Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 17A, di/dt = 100 A/µs VDD = 100 V, Tj = 150°C (see Figure 21) 486 6.3 26 ns µC A Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 3/16 STP21NM60N - STF21NM60N - STB21NM60N - STB21NM60N-1 - STW21NM60N Figure 3: Safe Operating Area For TO-220/ I²PAK/D²PAK Figure 6: Thermal Impedance TO-220/I²PAK/ D²PAK Figure 4: Safe Operating Area For TO-220FP Figure 7: Thermal Impedance For TO-220FP Figure 5: Safe Operating Area For TO-247 Figure 8: Thermal Impedance For TO-247 4/16 STP21NM60N - STF21NM60N - STB21NM60N - STB21NM60N-1 - STW21NM60N Figure 9: Output Characteristics Output Characteristics Figure 12: Transfer Characteristics Figure 10: Transconductance Figure 13: Static Drain-Source On Resistance Figure 11: Gate Charge vs Gate-source Voltage Figure 14: Capacitance Variations 5/16 STP21NM60N - STF21NM60N - STB21NM60N - STB21NM60N-1 - STW21NM60N Figure 15: Normalized Gate Threshold Voltage vs Temperature Figure 17: Normalized On Resistance vs Temperature Figure 16: Source-Drain Forward Characteristics Figure 18: Normalized BVDSS vs Temperature 6/16 STP21NM60N - STF21NM60N - STB21NM60N - STB21NM60N-1 - STW21NM60N Figure 19: Unclamped Inductive Load Test Circuit Figure 22: Unclamped Inductive Wafeform Figure 20: Switching Times Test Circuit For Resistive Load Figure 23: Gate Charge Test Circuit Figure 21: Test Circuit For Inductive Load Switching and Diode Recovery Times 7/16 STP21NM60N - STF21NM60N - STB21NM60N - STB21NM60N-1 - STW21NM60N In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 8/16 STP21NM60N - STF21NM60N - STB21NM60N - STB21NM60N-1 - STW21NM60N D2PAK FOOTPRINT TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. mm MIN. A B DIM. mm inch MIN. MAX. MIN. A0 10.5 10.7 0.413 0.421 B0 15.7 15.9 0.618 0.626 MIN. 330 1.5 C 12.8 D 20.2 G 24.4 N 100 T TAPE MECHANICAL DATA inch MAX. MAX. 12.992 0.059 13.2 0.504 0.520 26.4 0.960 1.039 0795 3.937 30.4 1.197 BASE QTY BULK QTY 1000 1000 MAX. D 1.5 1.6 0.059 0.063 D1 1.59 1.61 0.062 0.063 E 1.65 1.85 0.065 0.073 F 11.4 11.6 0.449 0.456 K0 4.8 5.0 0.189 0.197 0.153 0.161 P0 3.9 4.1 P1 11.9 12.1 0.468 0.476 P2 1.9 2.1 0.075 0.082 R 50 1.574 T 0.25 0.35 0.0098 0.0137 W 23.7 24.3 0.933 0.956 * on sales type 9/16 STP21NM60N - STF21NM60N - STB21NM60N - STB21NM60N-1 - STW21NM60N D2PAK MECHANICAL DATA TO-247 MECHANICAL DATA mm. inch DIM. MIN. TYP MAX. MIN. TYP. MAX. A 4.4 4.6 0.173 0.181 A1 2.49 2.69 0.098 0.106 A2 0.03 0.23 0.001 0.009 B 0.7 0.93 0.027 0.036 B2 1.14 1.7 0.044 0.067 C 0.45 0.6 0.017 0.023 C2 1.23 1.36 0.048 0.053 D 8.95 9.35 0.352 0.368 D1 E 8 10 E1 0.315 10.4 0.393 8.5 0.334 G 4.88 5.28 0.192 0.208 L 15 15.85 0.590 0.625 L2 1.27 1.4 0.050 0.055 L3 1.4 1.75 0.055 0.068 M 2.4 3.2 0.094 0.126 R 0.4 0º 0.015 4º 3 V2 1 10/16 STP21NM60N - STF21NM60N - STB21NM60N - STB21NM60N-1 - STW21NM60N TO-262 (I2PAK) MECHANICAL DATA mm. inch DIM. MAX. MIN. A 4.40 MIN. TYP 4.60 0.173 TYP. 0.181 MAX. A1 2.40 2.72 0.094 0.107 b 0.61 0.88 0.024 0.034 b1 1.14 1.70 0.044 0.066 c 0.49 0.70 0.019 0.027 c2 1.23 1.32 0.048 0.052 D 8.95 9.35 0.352 0.368 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 E 10 10.40 0.393 0.410 L 13 14 0.511 0.551 L1 3.50 3.93 0.137 0.154 L2 1.27 1.40 0.050 0.055 11/16 STP21NM60N - STF21NM60N - STB21NM60N - STB21NM60N-1 - STW21NM60N TO-220 MECHANICAL DATA DIM. mm. MIN. inch MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 b 0.61 0.88 0.024 0.034 b1 1.15 1.70 0.045 0.066 c 0.49 0.70 0.019 0.027 D 15.25 15.75 0.60 0.620 E 10 10.40 0.393 0.409 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 F 1.23 1.32 0.048 0.052 H1 6.20 6.60 0.244 0.256 J1 2.40 2.72 0.094 0.107 0.551 L 13 14 0.511 L1 3.50 3.93 0.137 L20 16.40 L30 12/16 TYP 0.154 0.645 28.90 1.137 øP 3.75 3.85 0.147 0.151 Q 2.65 2.95 0.104 0.116 STP21NM60N - STF21NM60N - STB21NM60N - STB21NM60N-1 - STW21NM60N TO-220FP MECHANICAL DATA mm. DIM. MIN. A 4.4 inch TYP MAX. MIN. TYP. 4.6 0.173 0.181 MAX. 0.106 B 2.5 2.7 0.098 D 2.5 2.75 0.098 0.108 E 0.45 0.7 0.017 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.7 0.045 0.067 F2 1.15 1.7 0.045 0.067 G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 0.409 L2 16 0.630 L3 28.6 30.6 1.126 1.204 L4 9.8 10.6 .0385 0.417 L5 2.9 3.6 0.114 0.141 L6 15.9 16.4 0.626 0.645 9 9.3 0.354 0.366 Ø 3 3.2 0.118 0.126 B D A E L7 L3 L6 F2 H G G1 F F1 L7 L2 L5 1 2 3 L4 13/16 STP21NM60N - STF21NM60N - STB21NM60N - STB21NM60N-1 - STW21NM60N TO-247 MECHANICAL DATA DIM. mm. MIN. inch MAX. MIN. TYP. MAX. A 4.85 5.15 0.19 0.20 A1 2.20 2.60 0.086 0.102 b 1.0 1.40 0.039 0.055 b1 2.0 2.40 0.079 0.094 b2 3.0 3.40 0.118 0.134 c 0.40 0.80 0.015 0.03 D 19.85 20.15 0.781 0.793 E 15.45 15.75 0.608 e 5.45 0.620 0.214 L 14.20 14.80 0.560 L1 3.70 4.30 0.14 L2 18.50 0.582 0.17 0.728 øP 3.55 3.65 0.140 0.143 øR 4.50 5.50 0.177 0.216 S 14/16 TYP 5.50 0.216 STP21NM60N - STF21NM60N - STB21NM60N - STB21NM60N-1 - STW21NM60N Table 9: Revision History Date Revision 22-Sep-2005 05-Oct-2005 26-Oct-2005 1 2 3 Description of Changes First Release. Modified curves 9-12 Complete version 15/16 STP21NM60N - STF21NM60N - STB21NM60N - STB21NM60N-1 - STW21NM60N Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics All other names are the property of their respective owners © 2005 STMicroelectronics - All Rights Reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 16/16