STP11NM60FD- STB11NM60FD STP11NM60FDFP - STB11NM60FD-1 N-CHANNEL 600V-0.40Ω-11ATO-220/TO-220FP/I2PAK/D2PAK FDmesh™Power MOSFET (with FAST DIODE) TYPE STP11NM60FD STP11NM60FDFP STB11NM60FD STB11NM60FD-1 VDSS RDS(on) 600 600 600 600 < < < < V V V V 0.45Ω 0.45Ω 0.45Ω 0.45Ω ID 11 A 11 A 11 A 11 A TYPICAL RDS(on) = 0.40Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE CHARGE LOW GATE INPUT RESISTANCE TIGHT PROCESS CONTROL AND HIGH MANUFACTURING YIELDS DESCRIPTION The FDmesh™ associates all advantages of reduced on-resistance and fast switching with an intrinsic fast-recovery body diode. It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters. 3 3 1 2 1 2 TO-220FP TO-220 3 12 3 1 I2PAK D2PAK INTERNAL SCHEMATIC DIAGRAM APPLICATIONS ZVS PHASE-SHIFT FULL BRIDGE CONVERTERS FOR SMPS AND WELDING EQUIPMENT ORDER CODES PART NUMBER MARKING PACKAGE PACKAGING STP11NM60FD P11NM60FD TO-220 TUBE STP11NM60FDFP P11NM60FDFP TO-220FP TUBE STB11NM60FDT4 B11NM60FD D2PAK TAPE & REEL STB11NM60FD-1 B11NM60FD I2PAK TUBE February 2004 1/13 STP11NM60FD - STP11NM60FDFP - STB11NM60FD - STB11NM60FD-1 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value STP11NM60FD STB11NM60FD STB11NM60FD-1 VDS VDGR VGS Unit STP11NM60FDFP Drain-source Voltage (VGS = 0) 600 V Drain-gate Voltage (RGS = 20 kΩ) 600 V Gate- source Voltage ±30 V ID Drain Current (continuos) at TC = 25°C 11 11 (*) A ID Drain Current (continuos) at TC = 100°C 7 7 (*) A IDM () PTOT Drain Current (pulsed) 44 44 (*) A Total Dissipation at TC = 25°C 160 35 W Derating Factor 0.88 0.28 W/°C dv/dt (1) Peak Diode Recovery voltage slope VISO Insulation Winthstand Voltage (DC) Tstg Storage Temperature Tj 20 V/ns -- 2500 V –65 to 150 Max. Operating Junction Temperature °C (•)Pulse width limited by safe operating area (1)ISD<11A, di/dt<400A/µs, VDD<V(BR)DSS, TJ<TJMAX (*)Limited only by maximum temperature allowed THERMAL DATA TO-220FP TO-220/I2PAK D2PAK Rthj-case Thermal Resistance Junction-case Max Rthj-amb Thermal Resistance Junction-ambient Max Tl 0.78 3.57 °C/W 62.5 °C/W 300 °C Maximum Lead Temperature For Soldering Purpose AVALANCHE CHARACTERISTICS Symbol Parameter Max Value Unit IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) 5.5 A EAS Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 35 V) 350 mJ ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) ON/OFF Symbol V(BR)DSS IDSS Parameter Test Conditions Drain-source Breakdown Voltage ID = 250 µA, VGS = 0 Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating Min. Typ. Max. 600 Unit V 1 µA VDS = Max Rating, TC = 125 °C 100 µA Gate-body Leakage Current (VDS = 0) VGS = ±30V ±100 nA VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 4 5 V RDS(on) Static Drain-source On Resistance VGS = 10V, ID = 5.5 A 0.40 0.45 Ω IGSS 2/13 3 STP11NM60FD - STP11NM60FDFP - STB11NM60FD - STB11NM60FD-1 DYNAMIC Symbol gfs (1) Parameter Forward Transconductance Test Conditions Min. VDS > ID(on) x RDS(on)max, ID = 5.5A VDS = 25V, f = 1 MHz, VGS = 0 Typ. Max. Unit 5.2 S 1000 pF Ciss Input Capacitance Coss Output Capacitance 208 pF Crss Reverse Transfer Capacitance 28 pF Coss eq. (2) Equivalent Output Capacitance VGS = 0V, VDS = 0V to 400V 100 pF Gate Input Resistance f=1 MHz Gate DC Bias = 0 Test Signal Level = 20mV Open Drain 3 Ω RG Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS. SWITCHING ON Symbol td(on) tr Parameter Turn-on Delay Time Rise Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge Test Conditions Min. Typ. Max. Unit VDD = 250V, ID = 5.5A RG = 4.7Ω VGS = 10V (see test circuit, Figure 3) 20 ns 16 ns VDD = 400V, ID = 11A, VGS = 10V 7.8 nC 13 nC 28 40 nC SWITCHING OFF Symbol tr(Voff) Parameter Off-voltage Rise Time tf Fall Time tc Cross-over Time Test Conditions Min. VDD = 400V, ID = 11A, RG = 4.7Ω, VGS = 10V (see test circuit, Figure 5) Typ. Max. Unit 10 ns 15 ns 24 ns SOURCE DRAIN DIODE Symbol ISD Parameter Test Conditions Min. Typ. Max. Unit Source-drain Current 11 A ISDM (2) Source-drain Current (pulsed) 44 A VSD (1) Forward On Voltage ISD = 11A, VGS = 0 1.5 V trr Reverse Recovery Time Qrr Reverse Recovery Charge ISD = 11A, di/dt = 100A/µs, VDD = 50V (see test circuit, Figure 5) IRRM Reverse Recovery Current 190 ns 1.1 µC 14.5 A Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. 3/13 STP11NM60FD - STP11NM60FDFP - STB11NM60FD - STB11NM60FD-1 Safe Operating for TO-220/I2PAK/D2PAK Safe Operating Area for TO-220FP Thermal Impedance for TO-220/I2PAK Thermal Impedance for TO-220FP Output Characteristics Transfer Characteristics 4/13 STP11NM60FD - STP11NM60FDFP - STB11NM60FD - STB11NM60FD-1 Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations Normalized Gate Thereshold Voltage vs Temp. Normalized On Resistance vs Temperature 5/13 STP11NM60FD - STP11NM60FDFP - STB11NM60FD - STB11NM60FD-1 Source-drain Diode Forward Characteristics 6/13 STP11NM60FD - STP11NM60FDFP - STB11NM60FD - STB11NM60FD-1 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 7/13 STP11NM60FD - STP11NM60FDFP - STB11NM60FD - STB11NM60FD-1 TO-220 MECHANICAL DATA DIM. 8/13 mm. MIN. TYP inch MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 b 0.61 0.88 0.024 0.034 b1 1.15 1.70 0.045 0.066 c 0.49 0.70 0.019 0.027 D 15.25 15.75 0.60 0.620 E 10 10.40 0.393 0.409 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 F 1.23 1.32 0.048 0.052 H1 6.20 6.60 0.244 0.256 J1 2.40 2.72 0.094 0.107 L 13 14 0.511 0.551 L1 3.50 3.93 0.137 0.154 L20 16.40 L30 28.90 0.645 1.137 øP 3.75 3.85 0.147 0.151 Q 2.65 2.95 0.104 0.116 STP11NM60FD - STP11NM60FDFP - STB11NM60FD - STB11NM60FD-1 TO-220FP MECHANICAL DATA mm. DIM. MIN. A 4.4 inch TYP MAX. MIN. TYP. 4.6 0.173 0.181 MAX. 0.106 B 2.5 2.7 0.098 D 2.5 2.75 0.098 0.108 E 0.45 0.7 0.017 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.7 0.045 0.067 F2 1.15 1.7 0.045 0.067 G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 0.409 L2 16 0.630 L3 28.6 30.6 1.126 1.204 L4 9.8 10.6 .0385 0.417 2.9 3.6 0.114 0.141 L6 15.9 16.4 0.626 0.645 L7 9 9.3 0.354 0.366 Ø 3 3.2 0.118 0.126 B D A E L5 L3 L6 F2 H G G1 F F1 L7 L2 L5 1 2 3 L4 9/13 STP11NM60FD - STP11NM60FDFP - STB11NM60FD - STB11NM60FD-1 TO-262 (I2PAK) MECHANICAL DATA mm. inch DIM. MIN. 10/13 TYP MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 A1 2.40 2.72 0.094 0.107 b 0.61 0.88 0.024 0.034 b1 1.14 1.70 0.044 0.066 c 0.49 0.70 0.019 0.027 c2 1.23 1.32 0.048 0.052 D 8.95 9.35 0.352 0.368 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 E 10 10.40 0.393 0.410 L 13 14 0.511 0.551 L1 3.50 3.93 0.137 0.154 L2 1.27 1.40 0.050 0.055 STP11NM60FD - STP11NM60FDFP - STB11NM60FD - STB11NM60FD-1 D2PAK MECHANICAL DATA mm. inch DIM. MIN. TYP MAX. MIN. TYP. MAX. A 4.4 4.6 0.173 0.181 A1 2.49 2.69 0.098 0.106 A2 0.03 0.23 0.001 0.009 B 0.7 0.93 0.027 0.036 B2 1.14 1.7 0.044 0.067 C 0.45 0.6 0.017 0.023 C2 1.23 1.36 0.048 0.053 D 8.95 9.35 0.352 0.368 D1 E 8 0.315 10 E1 10.4 0.393 8.5 0.334 G 4.88 5.28 0.192 0.208 L 15 15.85 0.590 0.625 L2 1.27 1.4 0.050 0.055 L3 1.4 1.75 0.055 0.068 M 2.4 3.2 0.094 0.126 R 0.015 0º 4º 3 V2 0.4 11/13 1 STP11NM60FD - STP11NM60FDFP - STB11NM60FD - STB11NM60FD-1 D2PAK FOOTPRINT TUBE SHIPMENT (no suffix)* TAPE AND REEL SHIPMENT (suffix ”T4”)* REEL MECHANICAL DATA DIM. mm MIN. A DIM. mm inch MIN. MAX. MIN. MAX. A0 10.5 10.7 0.413 0.421 B0 15.7 15.9 0.618 0.626 D 1.5 1.6 0.059 0.063 D1 1.59 1.61 0.062 0.063 E 1.65 1.85 0.065 0.073 F 11.4 11.6 0.449 0.456 K0 4.8 5.0 0.189 0.197 P0 3.9 4.1 0.153 0.161 P1 11.9 12.1 0.468 0.476 P2 1.9 2.1 0.075 0.082 R 50 1.574 T 0.25 0.35 0.0098 0.0137 W 23.7 24.3 * on sales type 12/13 0.933 0.956 MAX. MIN. 330 B 1.5 C 12.8 D 20.2 G 24.4 N 100 T TAPE MECHANICAL DATA inch MAX. 12.992 0.059 13.2 0.504 0.520 26.4 0.960 1.039 0795 3.937 30.4 1.197 BASE QTY BULK QTY 1000 1000 STP11NM60FD - STP11NM60FDFP - STB11NM60FD - STB11NM60FD-1 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. 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