FKPF12N60 / FKPF12N80 FKPF12N60 / FKPF12N80 Application Explanation • • • • Switching mode power supply, light dimmer, electric flasher unit, hair drier TV sets, stereo, refrigerator, washing machine Electric blanket, solenoid driver, small motor control Photo copier, electric tool 2 1: T1 2: T2 3: Gate 3 1 2 3 1 TO-220F Bi-Directional Triode Thyristor Planar Silicon Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol Rating Parameter (Note1 ) FKPF12N60 600 Units FKPF12N80 800 VDRM Repetitive Peak Off-State Voltage Symbol IT (RMS) Parameter RMS On-State Current Conditions Commercial frequency, sine full wave 360° conduction, TC=82°C ITSM Surge On-State Current I2t V Rating 12 Units A 60Hz sinewave 1 full cycle, peak value, non-repetitive 120 A I2t for Fusing Value corresponding to 1 cycle of halfwave 60Hz, surge on-state current 60 A2s di/dt Critical Rate of Rise of On-State Current IG = 2x IGT, tr ≤ 100ns 50 A/µs PGM Peak Gate Power Dissipation TC = +80°C, Pulse Width = 1.0µs 5 W PG (AV) Average Gate Power Dissipation TC = +80°C, t = 8.3ms 0.5 W VGM Peak Gate Voltage IGM Peak Gate Current Pulse Width ≤ 1.0µsec; TC = 90°C 10 V 2 A TJ Junction Temperature - 40 ~ 125 °C TSTG Storage Temperature - 40 ~ 125 °C Viso Isolation Voltage 1500 V Ta=25°C, AC 1 minute, T1 T2 G terminal to case Thermal Characteristic Symbol Rth(J-C) Parameter Thermal Resistance ©2002 Fairchild Semiconductor Corporation Test Condition Junction to case (Note 4) Min. - Typ. - Max. 3.0 Units °C/W Rev. A1, December 2002 Symbol IDRM Parameter Repetieive Peak Off-State Current VTM On-State Voltage VGT Gate Trigger Voltage (Note 2) Test Condition Typ. - Max. 20 Units µA - - 1.5 V T2(+), Gate (+) - - 1.5 V T2(+), Gate (-) - - 1.5 V T2(-), Gate (-) - - 1.5 V T2(+), Gate (+) - - 30 mA T2(+), Gate (-) - - 30 mA T2(-), Gate (-) - - 30 mA 0.2 - - V TC=25°C, ITM=17A Instantaneous measurement I II III VD=6V, RL=6Ω, RG=330Ω I Gate Trigger Current (Note 2) IGT Min. - VDRM applied II III VD=6V, RL=6Ω, RG=330Ω VGD Gate Non-Trigger Voltage TJ=125°C, VD=1/2VDRM IH Holding Current VD = 12V, ITM = 1A 50 mA IL Latching Current VD = 12V, IG = 1.2IGT 50 mA I, III II 70 VDRM = Rated, Tj = 125°C, Exponential Rise dv/dt Critical Rate of Rise of Off-State Voltag (dv/dt)C Critical-Rate of Rise of Off-State Commutating Voltage (Note 3) 300 10 - mA V/µs - V/µs Notes: 1. Gate Open 2. Measurement using the gate trigger characteristics measurement circuit 3. The critical-rate of rise of the off-state commutating voltage is shown in the table below 4. The contact thermal resistance RTH(c-f) in case of greasing is 0.5 °C/W VDRM (V) FKPF12N60 FKPF12N80 Commutating voltage and current waveforms (inductive load) Test Condition Supply Voltage 1. Junction Temperature TJ=125°C 2. Rate of decay of on-state commutating current (di/dt)C = - 6.0A/ms 3. Peak off-state voltage VD = 400V Time (di/dt)C Main Current Time Time Main Voltage (dv/dt)C VD Quadrant Definitions for a Triac T2 Positive + (+) T2 Quadrant II (+) IGT GATE (+) T2 Quadrant I (+) IGT GATE T1 T1 (+) T2 (+) T2 IGT - Quadrant III + IGT (+) IGT GATE (+) IGT GATE T1 Quadrant IV T1 T2 Negative ©2002 Fairchild Semiconductor Corporation Rev. A1, December 2002 FKPF12N60 / FKPF12N80 Electrical Characteristics TC=25°C unless otherwise noted FKPF12N60 / FKPF12N80 Typical Curves 200 50 SURGE ON-STATE CURRENT [A] 180 ON-STATE CURRENT [A] 40 30 Tj=25℃ Tj=125℃ 20 10 160 140 120 100 80 60 40 20 0 0 0.0 0.5 1.0 1.5 1 2.0 10 Figure 1. Maximum On-state Characteristics Figure 2. Rated Surge On-state Current 1000 NORMALIZED GATE TRIGGER CURRENT [%] 100 GATE VOLTAGE [V] VGM=10V PGM=5W 10 PG(AV)=0.5W IGM=2A VGT=1.5V 1 0.1 10 IRGTⅠ VGD=0.2V IFGTⅠ, IRGTⅢ 100 1000 10000 IFGTⅠ, IRGTⅠ 100 IFGTⅢ 10 -60 -40 -20 GATE CURRENT [mA] 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE [℃] Figure 3. Gate Characteristics Figure 4. Gate Trigger Current vs Tj 1000 10 JUNCTION TO CASE TRANSIENT THERMAL IMPEDANCE o Rth(j-c) [ C/W] NORMALIZED GATE TRIGGER VOLTAGE [%] 100 CONDUCTION TIME (CYCLES AT 60Hz) ON-STATE VOLTAGE [V] 100 10 -60 -40 -20 0 20 40 60 80 100 120 JUNCTION TEMPERATURE [℃] Figure 5. Gate Trigger Voltage vs Tj ©2002 Fairchild Semiconductor Corporation 140 1 0.1 1E-3 0.01 0.1 1 10 100 TIME [s] Figure 6. Transient Thermal Impedance Rev. A1, December 2002 FKPF12N60 / FKPF12N80 Typical Curves (Continues) 160 ① NO HEAT SINK ② 30 × 30 × 2 ㎜ AL HEAT SINK ③ 50 × 50 × 2 ㎜ AL HEAT SINK ④ 70 × 70 × 2 ㎜ AL HEAT SINK ⑤ 100 × 100 × 2 ㎜ AL HEAT SINK 120 100 CURVES APPLY REGARDLESS OF CONDUCTION ANGLE 140 CASE TEMPERATURE [℃] Maximum Allowable Ambient Temperature [℃] 140 80 60 40 120 100 80 60 360° CONDUCTION RESISTIVE, INDUCTIVE LOAD 40 20 ② ① ③ ④ 20 ⑤ 0 0 2 4 6 8 10 0 12 0 2 4 IT(RMS) [A] ON STATE POWER DISSIPATION [W] 16 360° CONDUCTION RESISTIVE, INDUCTIVE LOAD 12 10 8 6 4 2 0 0 2 4 6 8 10 12 14 16 10 12 14 16 5 10 TYPICAL EXAMPLE 4 10 3 10 2 10 -60 -40 RMS ON-STATE CURRENT [A] -20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE [V] Figure 9. Maximum On-state Power Dissipation Figure 10. Repetitive Peak Off-state Current vs Junction Temperature 1000 1000 TYPICAL EXAMPLE LATCHING CURRENT [mA] NORMALIZED HOLDING CURRENT [%] 8 Figure 8. Allowable Case Temperature vs Rms On-state Current NORMALIZED REPETIVITE OFF-STATE CURRENT [%] Figure 7. Allowable Ambient Temperature vs Rms On-state Current 14 6 RMS ON-STATE CURRENT [A] 100 10 -60 -40 -20 0 20 40 60 80 100 120 140 100 10 1 -60 T2(+), G(-) TYPICAL EXEMPLE T2(± ), G(+) TYPICAL EXEMPLE -40 -20 0 20 40 60 80 100 120 JUNCTION TEMPERATURE [℃] JUNCTION TEMPERATURE Figure 11. Holding Current vs Junction Temperature Figure 12. Laching Current vs Junction Temperature ©2002 Fairchild Semiconductor Corporation 140 Rev. A1, December 2002 FKPF12N60 / FKPF12N80 Typical Curves (Continues) 1000 NORMALIZED GATE TRIGGER CURRENT [%] NORMALIZED BREAKOVER VOLTAGE [%] 160 TYPICAL EXAMPLE 140 120 100 80 60 40 20 0 -60 -40 -20 0 20 40 60 80 100 120 IRGTⅠ IRGTⅢ 100 IFGTⅠ 10 1 140 10 100 GATE CURRENT PULSE WIDTH [uS] JUNCTION TEMPERATURE [V] Figure 13. Breakover Voltage vs. Junction Temperature Figure 14. Gate Trigger Current vs. Gate Current Pulse Width TYPICAL EXAMPLE Tj=125℃ 140 CRITICAL RATE OF RISE OF OFF-STATE COMMUTATING VOLTAGE [V/us] NORMALIZED BREAKOVER VOLTAGE [%] 160 TYPICAL EXAMPLE Tj = 125℃ IT = 4A τ = 500us VD = 200V f = 3Hz 100 120 100 Ⅰ QUADRANT 80 60 Ⅲ QUADRANT 40 20 Ⅰ QUADRANT 10 Ⅲ QUADRANT 1 0 1 10 2 10 10 3 RATE OF RISE OF-STATE VOLTAGE [V/us] Figure 15. Breakover Voltage vs. Rate of Rise of Off-State Voltage ©2002 Fairchild Semiconductor Corporation 10 4 10 1 10 2 10 3 10 RATE OF DECAY OF ON-STATE COMMUTATION CURRENT [A/ms] Figure 16. Commutation Characteristics Rev. A1, December 2002 FKPF12N60 / FKPF12N80 Package Dimension 3.30 ±0.10 TO-220F 10.16 ±0.20 2.54 ±0.20 ø3.18 ±0.10 (7.00) (1.00x45°) 15.87 ±0.20 15.80 ±0.20 6.68 ±0.20 (0.70) 0.80 ±0.10 ) 0° (3 9.75 ±0.30 MAX1.47 #1 +0.10 0.50 –0.05 2.54TYP [2.54 ±0.20] 2.76 ±0.20 2.54TYP [2.54 ±0.20] 9.40 ±0.20 4.70 ±0.20 0.35 ±0.10 Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation Rev. A1, December 2002 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ Bottomless™ FAST® FASTr™ CoolFET™ CROSSVOLT™ FRFET™ GlobalOptoisolator™ DOME™ EcoSPARK™ GTO™ E2CMOS™ HiSeC™ EnSigna™ I2C™ Across the board. Around the world.™ The Power Franchise™ Programmable Active Droop™ ImpliedDisconnect™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench® QFET™ QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ SILENT SWITCHER® SMART START™ SPM™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ TruTranslation™ UHC™ UltraFET® VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life support 1. Life support devices or systems are devices or systems device or system whose failure to perform can be which, (a) are intended for surgical implant into the body, reasonably expected to cause the failure of the life support or (b) support or sustain life, or (c) whose failure to perform device or system, or to affect its safety or effectiveness. when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2002 Fairchild Semiconductor Corporation Rev. I1