STMICROELECTRONICS TDA8143

TDA8143
HORIZONTAL DEFLECTION POWER DRIVER
.
.
.
..
.
..
.
CONTROLLED DRIVING OF THE POWER
TRANSISTOR DURING TURN ON AND OFF
PHASE FOR MINIMUM POWER DISSIPATION AND HIGH RELIABILITY
HIGH SOURCE AND SINK CURRENT CAPABILITY
DISCHARGE CURRENT DERIVED FROM
PEAK CHARGE CURRENT
CONTROLLED DISCHARGE TIMING
DISABLE FUNCTION FOR SUPPLY UNDER
VOLTAGE AND NONSYNCHRONOUS OPERATION
PROTECTION FUNCTION WITH HYSTERESIS FOR OVERTEMPERATURE
OUTPUT DIODE CLAMPING
LIMITING OF THE COLLECTOR PEAK CURRENT OF THE DEFLECTION POWER TRANSISTOR DURING TURN ON PERIOD
SPECIAL REMOTE FUNCTION WITH DELAY
TIME TO SWITCH THE OUTPUT ON
SIP9
(Plastic Package)
ORDER CODE : TDA8143
DESCRIPTION
The TDA8143 is a monolithic integrated circuit
designed to drive the horizontal deflection power
tran-sistor.
The current source characteristic of this device is
adapted to the non-linear current gain behaviour of
the power transistor providing a minimum power
dissipation. The TDA8143 is internally protected
against short circuits and thermal overload.
PIN CONNECTIONS
September 1993
PROTECTION AND REMOTE STANDBY INPUT
CONTROL INPUT
SPECIAL REMOTE STANDBY
CT
GROUND
SENSE-IN
VCC+
OUTPUT
GROUND
8143-01.EPS
9
8
7
6
5
4
3
2
1
1/9
TDA8143
Pin
1
2
3
4
5
6
Name
Power Ground
Ouptut
VCC
Sense Input
Sense GND
CEXT
7
Special Remote/Standby
8
9
Control Input
Protection and Remote
Standby Input
Function
Common Ground
Device Output
Supply Voltage
Input voltage that determines output current.
Reference Ground for Input Voltage at SENSE INPUT.
Capacitor between this terminal and SENSE GROUND determines the current
slope dIO/dt during OFF phase.
Low level at this input sets the device after a delay time tdr in the standby mode
independent from CONTROL INPUT (2nd priority).
High level at this input switches the BU508 off, low level switches the BU508 on.
A high level at this input switches the BU508 off independent from all other inputs
(1st priority).
8143-01.TBL
PIN FUNCTIONS
BLOCK DIAGRAM
VC C +
VH
100kΩ
PROTECTION AND
REMOTE STANBY INPUT
9
TDA8143
3
SYNC. DET.
IB 1
THERMAL
VS
PROTECTION
27Ω
10µH
BU508
2
OUT
SPECIAL
4
REMOTE
7 STANDBY
I B2
220µF
SENSE
IN
4.7Ω
RS
VC
&
0.15Ω
8
22nF
CONTROL
IN
5
GND
8143-02.EPS
1
6
C
1nF
Parameter
DC Supply Voltage
Output Current
Power Dissipation
Storage and Junction Temperature
Operating Temperature
Value
18
Internally Limited
Internally Limited
– 40, + 150
0, + 70
Unit
V
°C
°C
8143-02.TBL
Symbol
VCC
Id
Ptot
Tstg, Tj
Toper
Value
70
10
Unit
°C/W
°C/W
8143-03.TBL
ABSOLUTE MAXIMUM RATINGS
THERMAL DATA
Symbol
Rth (j–a)
Rth (j–c)
2/9
Parameter
Thermal Resistance Junction-ambient
Thermal Resistance Junction–case
Max.
Max.
TDA8143
ELECTRICAL CHARACTERISTICS (VCC = 12 V, Tamb = 25oC unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Supply Voltage
VCC
Typ.
Max.
7
IQ
Quiescent Current
All Inputs Open
10
15
Ip0
Positive Output Current (source)
In0
Negative Output Current (sink)
Io0
Positive quiescent output current forcing
the output to 6 V and the sense input to
ground output externally forced to 6 V.
Remote Input1
Remote Input0
120
50
150
80
Unit
18
V
25
mA
1.5
A
2
A
200
100
mA
mA
Transconductance ON Phase (1)
See Figure 1
1.8
2.0
2.2
A/V
Transconductance OFF Phase (2)
See Figure 1
1.8
2.0
2.2
A/V
GREMOTE
Transconductance Standby Mode
Remote Input0
0.675
0.75
0.825
A/V
Current Source Pin 6
V7 = 500 mV
135
165
200
µA
RINS
Sense Input Resistance
VS > 0
VS < 0
0.7
0.35
1
0.5
1.3
0.7
kΩ
kΩ
IINS
Sense Input Bias Current
VS = 0
Remote Input = 1
– 200
– 300
– 400
µA
RSYN
Synchronous Detection Input Resistance
VSYN < 7 V
VSYN > 7 V
30
7
60
10
150
15
kΩ
kΩ
VTHS
Threshold Voltage of the Synchronous
Detection Input
1
1.8
2.8
V
VSYN
SYNC DETECT Input Voltage
30
V
VTHA
Threshold Voltage of Control Input
I5
Pull up Current of Control Input
IINA
1.5
2
2.5
V
0 < VIN < VTHA
VIN > VTHA + 0.5 V
– 50
–1
– 100
0
– 160
+1
µA
µA
1.5
2
2.5
V
0 < VIN < VTHB
VIN > VTHB + 0.5 V
– 50
–1
– 100
0
– 160
+1
µA
µA
190
250
300
µs
3
4.5
µs
2.8
3
V
Threshold Voltage Remote Input
VTHB
IINB
Pull-up Current of the Remote Input
tdr
Remote Delay Time (3)
tdon
On Delay Time
VCC–VOUT
Output Voltage Drop for Ip0 = 1 A
VCC ON
Supply Voltage for Device "ON"
5.8
6.4
7.0
V
VCC OFF
Supply Voltage for Device "OFF"
(output internally switched to ground)
5.6
VCC ON
– 0.2 V
6.8
V
Sense Limit Voltage (4)
0.8
0.9
1
V
VS limit
Notes : 1.
2.
3.
4.
2
I0 ≥ 0
8143-04.TBL
GON
GOFF
GON is measured with V4 varying from 150mV to 350mV (Pin 6 is grounded)
GOFF is measured with V6 varying from 150mV to 350mV (Pin 4 is grounded)
When the remote input goes from HIGH to LOW the BU508 is switched off and it remains in this condition for the time tdr.
The sense input voltage VS is internally limited and results in a limited positive output current Ip0 = g. VS limit. Note that due to
the storage time tS of the BU508 limiting of VS leads to a reduced base current of the BU508 and the output current I0 is going to
the positive quiescent current Io0.
TRUTH TABLE
Floating or 1
Floating or 1
I0 > 0
I0 < 0 (5)
BU508 ON
BU508 OFF
X
0
I0 < 0 (5)
0 < t < tdr
BU508 OFF
X
0
I0 > 0
t > tdr
BU508 ON
0
Floating or 1
Note :
Output I0
Remote/Standby
Mode
Normal Function
Remote/Standby
Function
8143-05.TBL
Logics Inputs
Control Input
5. IO < 0 means that the sink current flows into the output to ground.
3/9
TDA8143
Figure 1 :
GON
|GOFF|
and
VPin5
VPin3
G ON (A/V) or G OFF (A/V)
2.2
2.1
2.0
1.9
V Pin3 (mV) or V Pin5 (mV)
1.7
0
50
100
150
200
250
300
350
400
450
500
550
600
650
700
750
8143-03.EPS
1.8
Figure 2 : Large Screen Application
Rf
+12V
Ca
STANDBY
D1
3
9
OUT
RO
8
BU508
2
LO
CO
4
TDA8143
Rb
R
S
Cb
5
6
8143-04.EPS
1
CS
4/9
CRT
22"/26" 100°
14"/20" 90°
CRT
22"/26" 100°
14"/20" 90°
Ca
Ro
Co
Lo
47 µF
27 Ω 2W
220 µF
10 µH
47 µF
27 Ω 1 W
220 µF
10 µH
Rb
Cb
Rs
Cs
4.7 Ω
47 nF
0.15 Ω
1 nF
4.7 Ω
47 nF
0.1 Ω
1 nF
8143-06.TBL
COMPONENTS LIST FOR TYPICAL APPLICATION
TDA8143
system.
The new approach, using the TDA8143, overcomes these restrictions by means of a feedback
principle.
As shown in Figure 4, at each instant of time the
ideal base current of the power transistor results
from its collector current divided by such current
gain which ensure the saturation ; thus the required
base current Ib can be easily generated by a feedback transconductance amplifier gm which senses
the deflection current across the resistor Rs at the
emitter of the power transistor and delivers :
Ib = RS • gm • Ie
The transconductance must only fulfill the condition :
1
1
1
⋅
< gm <
1 + βmin RS
RS
where β is the minimum current gain of the transitor.
This method always ensures the correct base current and acts time independent on principle.
For the turn-OFF, the base of the power transistor
must be discharged by a quasi linear time decreasing current as given in Figure 5.
Conventional driver systems inherently result into
a stable condition with a constant peak current
magnitude.
APPLICATION INFORMATION
The conventional deflection system is shown in
Figure 3. The driving circuit consists of a bipolar
power transistor driven by a transformer and a
medium power element plus some passive components.
During the active deflection phase the collector
current of the power transistor is linearly rising and
the driving circuitry must be adapted to the required
base current in order to ensure the power transistor
saturation.
According to the limited components number the
typical approach of the present TVs provides only
a rough approximation of this objective ; in Figure 4
we give a comparison between the typical real base
current and the ideal base current waveform and
the collector waveform.
The marked area represents a useless base current which gives an additional power dissipation on
the power transistor.
Furthermore during the turn-ON and turn-OFF transient phase of the chassis the power transistor is
extremely stressed when the convenctional network cannot guarantee the saturation ; for this
reason, generally, the driving circuit must be carefully designed and is different for each deflection
Figure 3 : Conventional Horizontal Deflection System for TVs
VCC +
DRIVING CIRCUIT
IC
IB
ID
HORIZONTAL
TRANSFORMER
YOKE
DEFLECTION CIRCUIT
8143-05.EPS
V IN
5/9
TDA8143
Figure 4 :
IC
Waveforms of Collector and
Base Current
Off Phase
On Phase
Off Phase
Real Base Current
Ideal Base Current
t
I BIAS
Base Bias Current
IC
8143-06.EPS
t
tS
ID
This is due to the constant base charge in the
turn-ON phase independent from the collector current ; hence a high peak current results into a low
storage time of the transistor because the excess
base charge is a minimum and vice versa. In the
active deflection the required function, high peak
current-fast switch-OFF and low peak current-slow
switch-OFF, is obtained by a controlled base discharge current for the power transistor ; the negative slope of this ramp is proportional to the actual
sensed current.
As a result, the active driving system even improves the sharpness of vertical lines on the screen
compared with the traditional solution due to the
increased stability factor of the loop represented as
the variation of the storage time versus the collector
peak current.
Figure 5
I0
dI 0
dt
t don
=
IS0
tS
Ip0
I0
IS0
ON PHASE
OFF PHASE
t
In0
t
CIRCUIT DESCRIPTION
Figure 6 shows the block diagram of the TDA8143,
the circuit consists of an input transconductance
amplifier composed by Q1, Q2, Q3 and Q4.
The symmetrical output current is fed into the load
resistor R1 and R2 ; the two amplifiers V1 and V2
realize a floating voltage to current converter which
can drive 1.2A sink current and 2A source current
for a wide common output range.
So, the overall transconductance results into :
R1 + R2 1
⋅
gm =
R5
R3
A current source I1 generates a drop of 70mV
across the resistor R4 which provides an output
bias current of 140mA ; the control input determines
the turn ON/OFF function.
In the ON phase, Q5 shorts the external capacitor
6/9
Ct. Within the input voltage range 0 < Vin < 750mV
the element realizes the transconductance function ; lower voltages are clamped by the D1/Q6
configuration.
For input voltages higher than 750mV, Q7 limits the
maximum output current at 1.5A peak.
In the turn-OFF mode, Ct will be charged by the
controlled source I2 which is proportional to the
input voltage, by this way, the output current decreases quasi linearly and the system stability is
reached.
During the flyback phase, the IC is enabled via the
sync. detector input ; this function with the limited
sink and source current together with the undervoltage turn-OFF and a chip temperature sensor ensure a complete protection of the IC.
8143-07.EPS
tS
CONTROL
INPUT
TDA8143
Figure 6 : Block Diagram of the Integrated Horizontal Driver
V CC+
3
PROTECTION
AND REMOTE
STANDBY INPUT
9
VOLTAGE
CONTROL
VC < 7V
Q9
V1
Q10
&
R5
OVERTEMP.
PROTECTION
Tj < 150˚C
V2
R1
R2
INPUT
TRANSCONDUCTANCE
AMPLIFIER
Q11
IB
2
OUTPUT
Q3
I2
I1
Q4
Q6
Q2
D2
Q1
4
R4
8
&
Q5
R6
VREF = 750mV
SPECIAL
REMOTE
STANDBY
SENSE
INPUT
V IN
Q8
7
6
C EXT
CT
In Figure 7 is shown the application diagram of the
TDA8143, the few external component and the
automatic handling possibility ensures a lower application cost versus the conventional approach
shown in Figure 3.
In Figure 8 is shown the currents and voltage
waveforms of the driver circuit of Figure 7 as to be
seen, the driving charge Ib ⋅ ton has been reduced
at minimum.
1
5
POWER
GROUND
8143-08.EPS
CONTROL
INPUT
Q7
D1
R3
SENSE
GROUND
The power dissipation on this application condition
is about 1.3W.
The presence of thermal shut-down circuit means
that the heatsink can have a smaller factor of safety
compared with that of a conventional circuit.
If for any reason, the junction temperature increases up to 150oC, the thermal shut-down simply
switches off the device.
7/9
TDA8143
Figure 7 : Integrated Horizontal Driver
HORIZONTAL
TRANSFORMER
R
V CC +
100µF
IC
3
ID
YOKE
220µF
9
TDA8143
IB
2
2W
DEFLECTION CIRCUIT
4
27Ω
6
Vi
8
4.7Ω
5
1
47nF
0.15Ω
8143-09.EPS
1nF
DRIVING CIRCUIT
8/9
8143-11.TIF
8143-10.TIF
Figure 8 : Signal Diagrams of the Driver Circuits
TDA8143
PACKAGE MECHANICAL DATA
9 PINS - PLASTIC SIP
C
L3
D
L1
c2
d1
N
1
9
L
a1
L2
A
M
b1
e3
e
c1
PM-SIP9.EPS
b3
B
A
a1
B
b1
b3
C
c1
c2
D
d1
e
e3
L
L1
L2
L3
M
N
Min.
Millimeters
Typ.
2.7
Max.
7.1
3
24.8
Min.
0.106
0.5
0.85
Inches
Typ.
Max.
0.280
0.118
0.976
0.020
1.6
0.033
3.3
0.43
1.32
0.063
0.130
0.017
0.052
21.2
0.835
14.5
2.54
20.32
0.571
0.100
0.800
3.1
0.122
3
17.6
0.118
0.693
0.25
3.2
1
0.010
0.126
0.039
SIP9.TBL
Dimensions
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility
for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result
from its use. No licence is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics.
Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all
information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life
support devices or systems without express written approval of SGS-THOMSON Microelectronics.
© 1994 SGS-THOMSON Microelectronics - All Rights Reserved
Purchase of I2C Components of SGS-THOMSON Microelectronics, conveys a license under the Philips
I2C Patent. Rights to use these components in a I2C system, is granted provided that the system conforms to
the I2C Standard Specifications as defined by Philips.
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco
The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A.
9/9