BU508 Series

RoHS
BU508 Series RoHS
SEMICONDUCTOR
Nell High Power Products
High voltage NPN Power transistor
8A, 1500V
FEATURES
C
Stable performance vs. operating
temperature variation
High ruggedness
1
Tigth h FE range at operating collector current
2
B
3
TO-3P and TO-247AB package which can be
installed to the heat sink with one screw
C
E
TO-247AB
APPLICATIONS
(BU508C)
Switching mode power supplies and
general purpose
TO-3PB
(BU805B)
C (2)
B
(1)
NPN
E (3)
High frequency inverters
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified)
SYMBOL
VALUE
TEST CONDITIONS
PARAMETER
VCES
Collector to emitter voltage
V BE =0
V CEO
Collector to emitter voltage
I B =0
700
V EBO
Emitter to base voltage
I C =0
9
IC
1500
Collector current-continuous
V
8
t p <5 ms
Peak collector current
I CM
UNIT
15
A
IB
Base Current
PD
Collector power dissipation
TJ
Junction temperature
150
T STG
Storage temperature
-55 to 150
4
T C =25°C
125
W
°C
THERMAL CHARACTERISTICS (TC = 25°C)
PARAMETER
SYMBOL
Thermal resistance, junction to case
Rth(j-c)
VALUE
UNIT
1.0
ºC/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise specified)
SYMBOL
ICES
l EBO
V CEO
TEST CONDITIONS
PARAMETER
Min.
Typ.
T C =25°C
Max.
UNIT
0.2
Collector cutoff current ( V BE = 0 )
V CEO =1500V, l E =0
Emitter cutoff current
V EBO =9V, l C =0
Collector to emitter voltage
I B =0
700
I C =100mA
700
T C =125°C
2
mA
1.0
V
V CEO(SUS) * Collector to emitter sustaining voltage
Forward current transfer ratio
(DC current gain)
I C =0.1A, V CE =5V
10
I C =4.5A, V CE =5V
5
V CE(sat) *
Collector to emitter saturation voltage
I C =4.5A, I B =1.6A
1.0
V BE(sat) *
Base to emitter saturation voltage
I C =4.5A, I B =2A
1.1
t stg
Storage time
I C =4.5A, I B(on) =0.5A, V BE(off) =-2.7V
2.5
tf
Fall time
f h =16KHz, L BB(off) =4.5µH
0.2
h FE *
30
V
µS
*Pulsed: Pulse duration= 300μs, duty cycle= 1.5%.
www.nellsemi.com
Page 1 of 4
RoHS
BU508 Series RoHS
SEMICONDUCTOR
Nell High Power Products
Fig.1 Power derating
Fig.2 Collector saturation region
Collector emitter voltage (volts), V CE
Power dissipation (watts), P D
150
125
100
75
50
25
0
0
25
50
75
100
125
150
2.8
T C = 25°C
2.4
4.5A
1.6
1.2
0.8
0.4
0
0.3
0.5
0.7
1.0
2
Base current, l B (A)
Fig.3 DC current gain
Fig.4 “ON” voltages
3
1.4
T J = 100°C
T C = 25°C
V CE = 5V
T C =100°C
Volatge (volts), V
1.2
DC current gain, h FE
3.5A 4A
Temperature, T C ( ° C)
20
T J = 25°C
10
5
3
2
0.05
3A
l C = 2A
2.0
1.0
0.8
V BE(sat) @ l C / l B = 2.0
0.6
0.4
0.2
0.1
0.2
0.5
1
2
V CE(sat) @ l C / l B = 2.0
0
0.05
5
0.1
Collector current (A), l C
0.2
20
I C = 4.5A, l B1 =1.8A
L B = 10uH
Fall time (us), t
10
tS
5.0
2.0
tf
1.0
3
3.5
4.0
4.5
Collector current (A), l C
www.nellsemi.com
1
Collector current (A), l C
Fig.5 Switching behavior vs. l CM
0.5
0.5
Page 2 of 4
5.0
2
5
RoHS
BU508 Series RoHS
SEMICONDUCTOR
Nell High Power Products
Fig.6 Forward bias safe operating area
10
Collector current (A), l C
5
2
1.0 us
2.0
5.0
10
20
50
100
200
500
1.0 ms
2.0
5.0
10
DC
1
0.5
0.2
0.1
0.05
0.02
Bonding wlre limit
Thermal limit
Second breakdown limit
0.01
.003
5
2
10
50
20
100
200
600
1K
Collector emitter voltage (volts), V CE
TO-247AB
4.69 (0.185)
5.31 (0.209)
1.49 (0.059)
2.49 (0.098)
15.49 (0.610)
16.26 (0.640)
20.80 (0.819)
21.46 (0.845)
3.55 (0.138)
3.81 (0.150)
B
C
Anode
5.38 (0.212)
6.20 (0.244)
16.15 (0.242)
E
2.87 (0.113)
3.12 (0.123)
4.50 (0.177)Max
19.81 (0.780)
20.32 (0.800)
1.65 (0.065)
(TYP.)
2.13 (0.084)
0.40 (0.016)
0.79 (0.031)
5.45 (0.215)
2.21 (0.087)
2.59 (0.102)
1.01 (0.040)
1.40 (0.055)
(TYP.)
5.45 (0.215)
1
2
3
C (2)
All dimensions in millimeters (inches)
www.nellsemi.com
Page 3 of 4
B
(1)
NPN
E (3)
RoHS
BU508 Series RoHS
SEMICONDUCTOR
Nell High Power Products
1.8
4.0
4.8±0.2
2.0±0.1
Φ3.2 ± 0,1
2
4.0 max
20.0 min
19.9±0.3
2.0
15.6±0.4
9.6
5.0 ±0 . 2
TO-3PB
3
5.45±0.1
B
C
E
1
2
3
+0.2
1.05 -0.1
+0.2
0.65 -0.1
5.45±0.1
1.4
C (2)
B
(1)
All dimensions in millimeters
www.nellsemi.com
Page 4 of 4
NPN
E (3)