TMMDB3TG ® DIAC FEATURES ■ ■ ■ VBO : 32V Low breakover current: 15µA max Breakover voltage range: 30 to 34V DESCRIPTION Functioning as a trigger diode with a fixed voltage reference, the TMMDB3TG can be used in conjunction with triacs for simplified gate control circuits or as a starting element in fluorescent lamp ballasts. MINIMELF ABSOLUTE MAXIMUM RATINGS (limiting values) Symbol Parameter ITRM Repetitive peak on-state current tp = 20 µs F= 120 Hz Tstg Tj Storage temperature range Operating junction temperature range January 2001 - Ed: 2 Value Unit 2 A - 40 to + 125 °C 1/4 TMMDB3TG ELECTRICAL CHARACTERISTICS (Tj = 25°C unless otherwise specified) Symbol VBO Parameter Test Conditions Breakover voltage * C = 22nF ** Value Unit MIN. 30 V TYP. 32 MAX. 34 I VBO1 - VBO2 I Breakover voltage symmetry C = 22nF ** MAX. ±2 V ∆V Dynamic breakover voltage * VBO and VF at 10mA MIN. 9 V VO Output voltage * see diagram 2 (R=20Ω) MIN. 5 V IBO Breakover current * C = 22nF ** MAX. 15 µA see diagram 3 MAX. 2 µs VR = 0.5 VBO max MAX. 10 µA tr Rise time * IR Leakage current * * Applicable to both forward and reverse directions. ** Connected in parallel to the device. ORDERING INFORMATION TMM DB 3 TG MINIMELF Special VBO range Diac Series Breakover voltage 3: VBO typ = 32V OTHER INFORMATION Part Number TMMDB3TG 2/4 Marking (None) Weight Base Quantity Packing Mode 0.04 g 2500 Tape & Reel TMMDB3TG Diagram 1: Voltage - current characteristic curve. Diagram 2: Test circuit. 10 kΩ 220 V + IF 500 kΩ D.U.T Rs=0 I C=0.1µF 50 Hz P Vo 10mA T410 R=20 Ω IBO IR -V + V Diagram 3: Rise time measurement. 0,5 VBO V VF lp 90 % VBO - IF 10 % tr Fig. 1: Relative variation of VBO versus junction temperature (typical values) Fig. 2: Repetitive peak pulse current versus pulse duration (maximum values). VBO [Tj] ITRM(A) VBO [Tj = 25°C] 20.0 1.08 F=120Hz Tj initial=25°C 10.0 1.06 1.04 1.0 1.02 tp(µs) Tj (°C) 1.00 25 50 75 0.1 100 125 1 10 100 3/4 TMMDB3TG Fig. 3: Time duration while current pulse is higher 50mA versus C and Rs (typical values). tp(µs) 40 Tj=25°C 68Ω 35 30 47Ω 25 33Ω 20 15 22Ω 10 10Ω 5 C(nF) 0Ω 0 10 20 50 100 200 500 PACKAGE MECHANICAL DATA (in millimeters) MINIMELF A REF. DIMENSIONS F E Millimeters / B O O /D Min. Typ. Max. Min. Typ. Max. A 3.30 3.40 3.6 0.130 0.134 0.142 B 1.59 1.60 1.62 0.063 0.063 0.064 C 0.40 0.45 0.50 0.016 0.018 0.020 D C Inches 1.50 0.059 C O / 0.05 E-F FOOTPRINT 2 2.5 5 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics © 2001 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 4/4