RHRP860_F085 Data Sheet September 2011 8A,600V Hyperfast Diodes Features The RHRP860_F085 is hyperfast diodes with soft recovery characteristics (trr < 30ns). It has half the recovery time of ultrafast diodes and is silicon nitride passivated ion-implanted epitaxial planar construction. • Hyperfast with Soft Recovery. . . . . . . . . . . . . . . . . . <30ns • Operating Temperature . . . . . . . . . . . . . . . . . . . . . . 175oC • Reverse Voltage Up To . . . . . . . . . . . . . . . . . . . . . . . . 600V This device is intended for use as freewheeling/clamping diodes and rectifiers in a variety of switching power supplies and other power switching applications. Its low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors. • Avalanche Energy Rated Formerly developmental type TA49059. • General Purpose Ordering Information Packaging PART NUMBER PACKAGE RHRP860_F085 TO-220AC • Planar Construction Applications • Switching Power Supplies • Power Switching Circuits JEDEC TO-220AC BRAND RHRP860_F085 ANODE CATHODE NOTE: When ordering, use the entire part number. CATHODE (FLANGE) Symbol K A Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified RHRP860_F085 UNITS Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VRRM 600 V Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VRWM 600 V DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VR 600 V Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IF(AV) (TC = 150oC) 8 A Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFRM (Square Wave, 20kHz) 16 A Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFSM (Halfwave, 1 Phase, 60Hz) 100 A Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD 75 W Avalanche Energy (See Figures 10 and 11) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAVL 20 mJ Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TSTG , TJ -65 to 175 oC ©2011 Fairchild Semiconductor Corporation RHRP860_F085 Rev. C RHRP860_F085 Electrical Specifications SYMBOL TC = 25oC, Unless Otherwise Specified TEST CONDITION MIN TYP MAX UNITS IF = 8A - - 2.1 V IF = 8A, TC = 150oC - - 1.7 V VR = 400V - - - µA VR = 600V - - 100 µA VR = 400V, TC = 150oC - - - µA VR = 600V, TC = 150oC - - 500 µA IF = 1A, dIF /dt = 200A/µs - - 30 ns IF = 8A, dIF /dt = 200A/µs - - 35 ns ta IF = 8A, dIF /dt = 200A/µs - 18 - ns tb IF = 8A, dIF /dt = 200A/µs - 10 - ns QRR IF = 8A, dIF /dt = 200A/µs - 56 - nC VR = 10V, IF = 0A - 25 - pF 2 oC/W VF IR trr CJ RθJC - - DEFINITIONS VF = Instantaneous forward voltage (pw = 300µs, D = 2%). IR = Instantaneous reverse current. trr = Reverse recovery time (See Figure 9), summation of ta + tb . ta = Time to reach peak reverse current (See Figure 9). tb = Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 9). QRR = Reverse recovery charge. CJ = Junction capacitance. RθJC = Thermal resistance junction to case. pw = Pulse width. D = Duty cycle. Typical Performance Curves 40 1000 IR , REVERSE CURRENT (µA) IF , FORWARD CURRENT (A) 175oC 10 175oC 100oC 25oC 1 0.5 100 100oC 10 1 25oC 0.1 0.01 0 0.5 1 1.5 2 2.5 VF , FORWARD VOLTAGE (V) FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE ©2011 Fairchild Semiconductor Corporation 3 0 100 200 300 400 500 600 VR , REVERSE VOLTAGE (V) FIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE RHRP860_F085 Rev. C RHRP860_F085 Typical Performance Curves (Continued) 35 60 TC = 25oC, dIF/dt = 200A/µs TC = 100oC, dIF/dt = 200A/µs 50 t, RECOVERY TIMES (ns) t, RECOVERY TIMES (ns) 30 25 trr 20 ta 15 10 tb trr 40 30 ta 20 tb 10 5 0 0.5 1 0 0.5 8 4 1 IF , FORWARD CURRENT (A) 90 TC = 175oC, dIF/dt = 200A/µs t, RECOVERY TIMES (ns) 75 trr 45 ta 30 tb 15 0 0.5 1 8 FIGURE 4. trr , ta AND tb CURVES vs FORWARD CURRENT IF(AV) , AVERAGE FORWARD CURRENT (A) FIGURE 3. trr , ta AND tb CURVES vs FORWARD CURRENT 60 4 IF , FORWARD CURRENT (A) 4 10 8 DC 6 SQ. WAVE 4 2 0 135 125 8 145 165 155 175 TC , CASE TEMPERATURE (oC) IF , FORWARD CURRENT (A) FIGURE 6. CURRENT DERATING CURVE FIGURE 5. trr , ta AND tb CURVES vs FORWARD CURRENT CJ , JUNCTION CAPACITANCE (pF) 60 50 40 30 20 10 0 0 50 100 150 200 VR , REVERSE VOLTAGE (V) FIGURE 7. JUNCTION CAPACITANCE vs REVERSE VOLTAGE ©2011 Fairchild Semiconductor Corporation RHRP860_F085 Rev. C RHRP860_F085 Test Circuits and Waveforms VGE AMPLITUDE AND RG CONTROL dIF/dt t1 AND t2 CONTROL IF L DUT CURRENT SENSE RG IF + VGE - IGBT t1 VDD dIF trr dt ta tb 0 0.25 IRM t2 IRM FIGURE 8. trr TEST CIRCUIT FIGURE 9. trr WAVEFORMS AND DEFINITIONS IMAX = 1A L = 40mH R < 0.1Ω EAVL = 1/2LI2 [VR(AVL) /(VR(AVL) - VDD)] Q1 = IGBT (BVCES > DUT VR(AVL)) VAVL L CURRENT SENSE R + VDD IL IL I V Q1 VDD DUT t0 FIGURE 10. AVALANCHE ENERGY TEST CIRCUIT ©2011 Fairchild Semiconductor Corporation t1 t2 t FIGURE 11. AVALANCHE CURRENT AND VOLTAGE WAVEFORMS RHRP860 Rev. C TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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