TPI8011N TPI12011N Application Specific Discretes A.S.D. TRIPOLAR PROTECTION FOR ISDN INTERFACES FEATURES BIDIRECTIONAL TRIPLE CROWBAR PROTECTION. PEAK PULSE CURRENT : IPP = 30 A , 10/1000 µs. BREAKDOWN VOLTAGE: TPI80xxN : 80V TPI120xxN : 120V. AVAILABLE IN SO8 PACKAGES. LOW DYNAMIC BREAKOVER VOLTAGE : TPI80N : 150V TPI120 : 200V SO 8 DESCRIPTION Dedicated devices for ISDN interface and high speed data telecom line protection. Equivalent to a triple TRISIL with low capacitance. These devices provide : - low capacitance from lines to ground, allowing high speed transmission without signal attenuation. - good capacitance balance between lines in order to ensure longitudinal balance. - fixed breakdown voltage in both common and differential modes. - the same surge current capability in both common and differential modes. - A particular attention has been given to the internal wire bonding. The ”4-point” configuration ensures a reliable protection, eliminating overvoltages introduced by the parasitic inductances of the wiring (Ldi/dt), especially for very fast transient overvoltages. SCHEMATIC DIAGRAM Tip 1 8 Tip GND 2 7 GND GND 3 6 GND Ring 4 5 Ring COMPLIESWITHTHE FOLLOWINGSTANDARDS : CCITT K17 - K20 VDE 0433 VDE 0878 CNET 10/700 µs 5/310 µs 10/700 µs 5/310 µs 1.2/50 µs 1/20 µs 0.5/700 µs 0.2/310 µs 1.5 38 2 50 1.5 40 1.5 38 kV A kV A kV A kV A TM: ASD is a trademark of SGS-THOMSON Microelectronics. November 1999 Ed : 3A 1/7 TPI8011N/TPI12011N ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C) Symbol Parameter Value Unit IPP Peak pulse current (see note 1) 10/1000 µs 5/320 µs 2/10 µs 30 40 90 A ITSM Non repetitive surge peak on-state current (F = 50 Hz). tp = 10 ms t =1 s 8 3.5 A T stg Tj Storage temperature range Maximum junction temperature - 55 to + 150 150 °C 260 °C Value Unit 170 °C/W TL Maximum lead temperature for soldering during 10s Note 1 : Pulse waveform : 10/1000µs tr=10µs 5/310µs tr=5µs 2/10µs tr=2µs tp=1000µs tp=310µs tp=10µs % I PP 100 50 0 tr tp t THERMAL RESISTANCES Symbol Rth (j-a) 2/7 Parameter Junction to ambient SO 8 TPI8011N/TPI12011N ELECTRICALCHARACTERISTICS (Tamb = 25°C) Symbol VRM Parameter Stand-offvoltage IRM Leakage current VBR Breakdown voltage VBO Breakover voltage IH Holding current IBO Breakover current IPP Peak pulse current VF Forward Voltage Drop C Capacitance IRM @ VRM Types VBR @ IR max. IBO IH max. note1 VBO dyn. typ. note2 max. note1 min. note3 VBO min. µA V V mA V V mA mA TPI8011N 10 70 80 1 120 150 800 150 TPI12011N 10 105 120 1 180 200 800 150 Note 1 : See the reference test circuit 1. Note 2 : Surge test according to CCITT 1.5kV,10/700 µs between Tip or Ring and ground. Note 3 : See functional holding current test circuit 2. CAPACITANCES CHARACTERISTICS LINE A LINE A CA TPIxx CB LINE B LINE B CONFIGURATION CA (pF) max CB (pF) max CA - CB (pF) max VA =1V VB =56V 70 50 30 VA = 56V VB= 1V 50 70 30 3/7 TPI8011N/TPI12011N REFERENCE TEST CIRCUIT 1 : TEST PROCEDURE : Pulse Test duration (tp = 20ms): - For Bidirectional devices = Switch K is closed - For Unidirectional devices = Switch K is open. VOUT Selection - Device with VBO < 200 Volt - V OUT = 250 VRMS, R1 = 140 Ω. - Device with VBO ≥ 200 Volt - VOUT = 480 VRMS, R2 = 240 Ω. FUNCTIONAL HOLDING CURRENT (IH) TEST CIRCUIT 2 : R - VP D.U.T. VBAT = - 48 V Surge generator This is a GO-NOGO Test which allows to confirm the holding current (IH ) level in a functional test circuit. TEST PROCEDURE : 1) Adjust the current level at the I H value by short circuiting the AK of the D.U.T. 2) Fire the D.U.T with a surge Current : Ipp = 10A , 10/1000 µs. 3) The D.U.T will come back off-state within 50 ms max. 4/7 TPI8011N/TPI12011N Fig. 1 : Surgepeakcurrent versus overload duration. ITSM(A) 10 F=50H z Tj initial=25°C 9 8 7 6 5 4 3 2 1 0 1E-2 t(s) 1E-1 1E+0 1E+1 1E+2 1E+3 APPLICATION NOTE. Tip 1 IN OUT 8 2 7 3 6 GND Ring Tip GND 4 IN OUT 5 1) Connect pins 2, 3, 6 and 7 to ground in order to guarantee a good surge current capability for long duration disturbances. 2) In order to take advantageof the ”4-point” structure of the TPIxxxN, the Tip and Ring lines have to cross the device. In this case, the device will eliminate the overvoltagesgenerated by the parasitic inductancesof the wiring (Ldi/dt), especially for very fast transients. Ring 4- point structure lay-out. APPLICATION CIRCUITS : 2 - S INTERFACE PROTECTION 1 - U INTERFACE PROTECTION A A R o r PTC GND R o r PTC B T P Ix x R o r PTC T P Ix x GND A R o r PTC T P Ix x B R o r PTC B GND R o r PTC This component uses an intemal structure resulting in symetrical characteristics with a good balanced behaviour. Its topology ensures the same breakdown voltage level for positive and negative surges in differential and common mode . 5/7 TPI8011N/TPI12011N ORDER CODE TPI 80 1 1 N RL PACKAGING : RL = Tape and reel = Tube BIDIRECTIONAL REVISION PACKAGE 1=SO 8 PLASTIC VERSION BREAKDOWN VOLTAGE MARKING Package Type Marking SO8 TPI8011N TPI12011N TP80N TP120N CONNECTION DIAGRAM SO8 Plastic 6/7 Tip 1 8 Tip GND 2 7 GND GND 3 6 GND Ring 4 5 Ring TPI8011N/TPI12011N PACKAGE MECHANICAL DATA SO8 Plastic DIMENSIONS REF. A a1 a2 b b1 C c1 D E e e3 F L M S Millimetres Inches Min. Typ. Max. Min. Typ. Max. 1.75 0.069 0.1 0.25 0.004 0.010 1.65 0.065 0.35 0.48 0.014 0.019 0.19 0.25 0.007 0.010 0.50 0.020 45° (typ) 4.8 5.0 0.189 0.197 5.8 6.2 0.228 0.244 1.27 0.050 3.81 0.150 3.8 4.0 0.15 0.157 0.4 1.27 0.016 0.050 0.6 0.024 8° (max) Packaging : Products supplied in antistatic tubes or tape and reel. Weight : 0.08g Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. 1998 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. 7/7