THDT6511D ® Application Specific Discretes TRANSIENT A.S.D.™ VOLTAGE SUPPRESSOR FOR SLIC PROTECTION FEATURES ■ ■ ■ ■ ■ ■ DUAL ASYMETRICAL TRANSIENT SUPPRESSOR PEAK PULSE CURRENT : IPP = 40A, 10/100µs HOLDING CURRENT : 150 mA min. BREAKDOWN VOLTAGE : 65 V min. LOW DYNAMIC CHARACTERISTICS STAND CCITT K20 AND LSSGR SO-8 DESCRIPTION This device has been especially designed to protect subscriber line cards against overvoltage. Two diodes clamp positive overloads while negative surges are suppressed by two protection thyristors. A particular attention has been given to the internal wire bonding. The “4-point” configuration ensures a reliable protection, eliminating overvoltages introduced by the parasitic inductances of the wiring (Ldi/dt), especially for very fast transient overvoltages. (s) t c u d o r P e VDE 0433 : t e l o VDE 0878 : I3124 : 10/700µs 5/310µs 10/700µs 5/310µs 1.2/50µs 1/20µs 0.5/700µs 0.2/310µs 2/10µs 2/10µs s b O FCC part 68 : BELLCORE TR-NWT-001089 : 2/10µs 2/10µs 10/1000µs 10/1000µs 1kV 38A 2kV 50A 1.5kV 40A 1kV 38A 2.5kV 125A (*) e t le TIP 1 o s b O - COMPLIES WITH THE FOLLOWING STANDARDS : CCITT K20 : SCHEMATIC DIAGRAM c u d ) s t( o r P 8 TIP GND 2 7 GND GND 3 6 GND RING 4 5 RING 2.5kV 125A (*) 1kV 40A (*) (*) with series resistors or PTC. August 2001 - Ed: 2 1/6 THDT6511D ABSOLUTE MAXIMUM RATINGS (Tamb = 25°C) Symbol Parameter IPP Peak pulse current (see note 1) ITSM Non repetitive surge peak on-state current F = 50 Hz ITSM F = 50 Hz, 60 x 1 s, 2 mn between pulse Tstg Tj Storage temperature range Maximum junction temperature TL Maximum lead temperature for soldering during 10s Value Unit 10/1000µs 5/310µs 2/10µs 40 50 125 A t = 300 ms t=1s t=5s 10 3.5 1 A 1 A - 55 to + 150 150 °C 260 °C % I PP Note 1 : Pulse waveform : 10/1000µs tr=10µs 5/310µs tr=5µs 2/10µs tr=2µs tp=1000µs tp=310µs tp=10µs 100 c u d 50 0 tr THERMAL RESISTANCES Symbol Rth (j-a) Junction to ambient ) s ( ct Stand-off voltage IRM Leakage current at stand-off voltage VBR Breakdown voltage VBO Breakover voltage t e l o s b O VF 2/6 r P e Holding current VBO Peak forward voltage IBO Breakover current IPP Peak pulse current C Capacitance αT Temperature coefficient 170 °C/W VF VBR V VRM IRM Forward voltage drop VFP Unit IF Parameter VRM Value I u d o Symbol t tp o s b O - Parameter ELECTRICAL CHARACTERISTICS (Tamb = 25°C) IH e t le o r P ) s t( IH IBO Ipp THDT6511D 1 - PARAMETERS RELATED TO DIODE LINE / GND Symbol Test conditions Min. Typ. tp = 100 µs VF IF = 1 A VFP see curve fig. 1 Max. Unit 2 V NA NA NA V Min. Typ. Max. Unit NA : Non Available 2 - PARAMETERS RELATED TO PROTECTION THYRISTOR Symbol VBR Tests conditions IR = 1mA 65 68 VBO IRM VRM = 63 V IBO tp = 100 µs IBO F = 50 Hz RG = 600 Ω 110 450 c u d 500 150 αT VD = 100 mVRMS dV/dt 85 100 IH C V F = 1KHz Linear ramp up to 67 % of VBR ) s ( ct o s b O - e t le 5 o r P V ) s t( µA mA mA mA 10-4/°C 15 500 pF kV / µs u d o r P e t e l o s b O 3/6 THDT6511D DYNAMIC CHARACTERISTICS : VFP and VBO Figure 1 : 60 10 250 ns 10 us 5 2 10 ms -85 t 1 us -100 c u d 200 ns -130 e t le o r P Under lightning and power crossing test, the device limits the transient voltage to the values indicated in the figure LSSGR TEST DIAGRAM Figure 2 : ) s ( ct u d o r P e o s b O - THDT6511D t e l o s b O To stand the LSSGR test requirements, Rp must be 15 Ω 4/6 ) s t( THDT6511D TYPICAL APPLICATION RING GENERATOR - Vbat PTC LINE A TIP T E S T RING RELAY R E L A Y LINE B PTC e t le THDT6511D (s) RING o s b O - t c u P1 d o r P e t e l o Line B o r P Tip D1 s b O c u d THBT200S Line A ) s t( Integrated SLIC - For positive surges versus GND (TIP), diode D1 will conduct. - For negative surges versus GND (TIP), protection device P1 will trigger at maximum voltage equal to VBO. Ring 5/6 THDT6511D ORDER CODE THDT 65 1 1 D RL Tape & reel Asymmetrical Trisil Low Dynamic Characteristics Breakdown Voltage Version SO-8 Package PACKAGE MECHANICAL DATA. SO-8 Plastic DIMENSIONS REF. Millimetres Min. ) s ( ct u d o A a1 a2 b b1 C c1 D E e e3 F L M S 0.1 0.35 0.19 e t le 4.8 5.8 o s b O - 3.8 0.4 Inches Typ. Max. Min. 1.75 0.25 0.004 1.65 0.48 0.014 0.25 0.007 0.50 45° (typ) 5.0 0.189 6.2 0.228 1.27 3.81 4.0 0.15 1.27 0.016 0.6 8° (max) c u d o r P ) s t( Typ. Max. 0.069 0.010 0.065 0.019 0.010 0.020 0.197 0.244 0.050 0.150 0.157 0.050 0.024 r P e MARKING : DT651D PACKAGING : Products supplied in antistatic tube or tape and reel. Weight : 0.08g t e l o s b O Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics © 2001 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 6/6