TPI Tripolar protection for ISDN interfaces Features ■ Bidirectional triple crowbar protection ■ Peak pulse current: IPP = 30 A , 10/1000 µs ■ Breakdown voltage: – TPI80N: 80 V – TPI120N: 120 V Complies with following standards ■ Available in SO-8 package ■ ■ Low dynamic breakover voltage: – TPI8011N: 120 V – TPI12011N: 170 V CCITT K17-K20 – 10/700 µs, 1.5 kV – 5/310 µs, 38 A ■ VDE 0433 – 10/700 µs, 2 kV – 5/310 µs, 50 A ■ VDE 0878 – 1.2/50 µs, 1.5 kV – 1/20 µs, 40 A ■ IEC 61000-4-2 level 4 – 0.5/700 µs, 1.5 kV – 0.2/310 µs, 38 A SO-8 Benefits ■ Low capacitance from lines to ground, allowing high speed transmission without signal attenuation ■ Good capacitance balance between lines to ensure longitudinal balance ■ Fixed breakdown voltage in both common and differential modes ■ The same surge current capability in both common and differential modes ■ A particular attention has been given to the internal wire bonding. The “4-point” configuration ensures a reliable protection, eliminating overvoltages introduced by the parasitic inductances of the wiring (LdI/dt), especially for very fast transient overvoltages Description Dedicated devices for ISDN interface and high speed data telecom line protection. Equivalent to a triple Trisil™ with low capacitance. Figure 1. Functional diagram Tip 1 8 Tip GND 2 7 GND GND 3 6 GND Ring 4 5 Ring TM: Trisil is a trademark of STMicroelectronics November 2007 Rev 5 1/9 www.st.com 9 Characteristics 1 TPI Characteristics Table 1. Absolute ratings (Tamb = 25 °C) Symbol Parameter Value Unit Peak pulse current (see note (1)) 10/1000 µs 5/310 µs 2/10 µs 30 40 90 A ITSM Non repetitive surge peak on-state current (F = 50 Hz) tp = 10 ms t = 1s 8 3.5 A Tstg Tj Storage temperature range Maximum junction temperature - 55 to 150 150 °C 260 °C Value Unit 170 °C/W IPP TL Maximum lead temperature for soldering during 10 s. 1. See Figure 3. Table 2. Thermal resistances Symbol Rth(j-a) Table 3. Parameter Junction to ambient Electrical characteristics (Tamb = 25 °C) Symbol Parameter VRM Stand-off voltage VBR Breakdown voltage VBO Breakover voltage IRM Leakage current IPP Peak pulse current IBO Breakover current IH Holding current VF Forward voltage drop C Capacitance IRM @ VRM Order code max. µA VBR @ IR min. V VBO VBO dyn. IBO IH max. note (1) typ. note (2) max. note (1) min. note(3) V mA V V mA mA TPI8011N 10 70 80 1 110 120 800 150 TPI12011N 10 105 120 1 160 170 800 150 1. See the reference test circuit 1 (Figure 5.) 2. Surge test according to CCITT 1.5 kV, 10/700 µs between Tip or Ring and ground 3. See functional holding current test circuit 2 (Figure 6.) Figure 2. 2/9 TPI Characteristics Table 4. Capacitance characteristics CONFIGURATION CA (pF) max. CB (pF) max. CA - CB (pF) max. VA = -1 V VB = -56 V 45 15 30 VA = -56 V VB = -1 V 15 45 30 LINE A LINE A CA TPIxx CB LINE B Figure 3. LINE B Pulse waveform (10/1000 µs) Figure 4. Surge peak current versus overload duration ITSM(A) % I PP 10 F=50Hz Tj initial=25°C 9 10 0 8 7 6 5 50 4 3 2 0 tr tp t 1 0 1E-2 t(s) 1E-1 1E+0 1E+1 1E+2 1E+3 3/9 Characteristics TPI Figure 5. Reference test circuit 1 tp = 20 ms Auto Transformer 220 V / 2 A R1 140 Ω Static relay R2 240 Ω 220 V K VOUT D.U.T. IBO, IH measure VBO measure Transformer 220 V / 800 V 2A TEST PROCEDURE Pulse test duration (tp = 20 ms): ● for Bidirectional devices = Switch K is closed ● for Unidirectional devices = Switch K is open VOUT selection: ● Device with VBO < 200 V ➔ VOUT = 250 VRMS, R1 = 140 Ω ● Device with VBO > 200 V ➔ VOUT = 480 VRMS, R2 = 240 Ω Figure 6. Functional holding current (IH) test circuit 2 R D.U.T. - VP VBAT = - 48 V Surge generator This is a GO-NOGO test which allows to confirm the holding current (IH) level in a functional test circuit. TEST PROCEDURE 1/ Adjust the current level at the IH value by short circuiting the AK of the D.U.T. 2/ Fire the D.U.T. with a surge current ➔ IPP 10 A, 10/1000 µs. 3/ The D.U.T. will come back off-state within 50 ms maximum. 4/9 TPI 2 Application information Application information Figure 7. Application circuit - U interface protection R or PTC A TPIxx GND R or PTC B Figure 8. Application circuit - S interface protection A R or PTC TPIxx GND R or PTC B A R or PTC TPIxx GND R or PTC B This component uses an intemal structure resulting in symetrical characteristics with a good balanced behaviour. Its topology ensures the same breakdown voltage level for positive and negative surges in differential and common mode. 5/9 Ordering information scheme Figure 9. TPI Connections 1. Tip 1 IN OUT 2 8 GND 3 3 2. 7 GND Ring Tip 4 6 IN OUT 5 Ring Connect pins 2, 3, 6 and 7 to ground in order to guarantee a good surge current capability for long duration disturbances. To take advantage of the “4-point” structure of the TPIxxxN, the Tip and Ring lines have to cross the device. In this case, the device will eliminate the overvoltages generated by the parasitic inductances of the wiring (LdI/dt), especially for very fast transients. Ordering information scheme Figure 10. Ordering information scheme TPI 80 1 1 N RL Bidirectional Tripolar Protection Breakdown voltage 80 = 80 V Version Package 1 = SO-8 Revision Packing mode RL = Tape and reel Blank = Tube 6/9 TPI 4 Package information Package information ● Epoxy meets UL94, V0 In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com. Table 5. SO-8 dimensions Dimensions Ref. Seating Plane C A2 C ppp C L1 D 8 5 0.069 0.1 0.25 0.004 0.010 A2 1.25 0.049 b 0.28 0.48 0.011 0.019 C 0.17 0.23 0.007 0.009 D 4.80 4.90 5.00 0.189 0.193 0.197 E 5.80 6.00 6.20 0.228 0.236 0.244 E1 3.80 3.90 4.00 0.150 0.154 0.157 E1 1 1.75 A1 L k Inches Min. Typ. Max. Min. Typ. Max. A A A1 e b h x 45° Millimeters e E 4 1.27 0.050 h 0.25 0.50 0.010 0.020 L 0.40 1.27 0.016 0.050 L1 k 1.04 0° ppp 0.041 8° 0.10 0° 8° 0.004 Figure 11. SO-8 footprint, dimensions in mm (inches) 6.8 (0.268) 0.6 (0.024) 4.2 (0.165) 1.27 (0.050) 7/9 Ordering Information 5 TPI Ordering Information Table 6. Ordering information Order code Marking TPI8011N TP80N TPI8011NRL (1) Package Weight TP80N SO-8 Base qty Delivery mode 100 Tube 2500 Tape and reel 0.08 g TPI12011N TP120N 100 Tube TPI12011NRL (1) TP120N 2500 Tape and reel 1. Prefered device 6 Revision history Table 7. 8/9 Document revision history Date Revision Changes August-2001 3A 02-Aug-2004 4 VBO dyn. (page 2) and capacitances (page 3) values update. 07-Nov-2007 5 Reformatted to current standards. Updated Package information. Last update. TPI Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. 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