VN05H HIGH SIDE SMART POWER SOLID STATE RELAY TYPE VN05H ■ ■ ■ ■ ■ ■ V DSS R DS(on ) I OUT V CC 60 V 0.18 Ω 12 A 36 V OUTPUT CURRENT (CONTINUOUS): 12A @ Tc=25oC LOGIC LEVEL 5V COMPATIBLE INPUT THERMAL SHUT-DOWN UNDER VOLTAGE SHUT-DOWN OPEN DRAIN DIAGNOSTIC OUTPUT VERY LOW STAND-BY POWER DISSIPATION DESCRIPTION The VN05H is a monolithic devices made using SGS-THOMSON Vertical Intelligent Power Technology, intended for driving resistive or inductive loads with one side grounded. Built-in thermal shut-down protects the chip from over temperature and short circuit. The input control is 5V logic level compatible. The open drain diagnostic output indicates open circuit (no load) and over temperature status. PENTAWATT (vertical) PENTAWATT (horizontal) PENTAWATT (in-line) ORDER CODES: PENTAWATT vertical VN050H PENTAWATT horizontal VN050H(011Y) PENTAWATT in-line VN050H(012Y) BLOCK DIAGRAM July 1998 1/10 VN05H ABSOLUTE MAXIMUM RATING Symbol Value Unit Drain-Source Breakdown Voltage 60 V Output Current (cont.) 12 A IR Reverse Output Current -12 A I IN Input Current ±10 mA V (BR)DSS I OUT Parameter VCC Supply Voltage (continuous) 40 V VCC Supply Voltage (pulsed) 60 V -V CC Reverse Supply Voltage -4 V I STAT Status Current ±10 mA V ESD Electrostatic Discharge (1.5 kΩ, 100 pF) 2000 V P tot Power Dissipation at T c ≤ 25 o C 52 W Tj Junction Operating Temperature -40 to 150 o C -55 to 150 o C T stg Storage Temperature ESB Power Mos Avalanche Energy CONNECTION DIAGRAMS CURRENT AND VOLTAGE CONVENTIONS 2/10 350 mJ VN05H THERMAL DATA R thj-case R thj-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max o 2.4 62.5 o C/W C/W ELECTRICAL CHARACTERISTICS (VCC = 9 to 36 V; -40 ≤ Tj ≤ 125 oC unless otherwise specified) POWER Symbol Parameter Test Conditions VCC Supply Voltage see note 1 R on On State Resistance I OUT = 6 A I OUT = 6 A Supply Current Off State On State IS Min. Typ. Max. Unit 5.5 13 36 V 0.18 0.36 Ω Ω 50 15 µA mA Max. Unit T j = 25 o C o T j ≥ 25 C SWITCHING Symbol Parameter Test Conditions t d(on) Turn-on Delay Time Of Output Current I OUT = 6 A Resistive Load Input Rise Time < 0.1 µs T j = 25 o C 15 µs Rise Time Of Output Current I OUT = 6 A Resistive Load Input Rise Time < 0.1 µs T j = 25 o C 30 µs Turn-off Delay Time Of Output Current I OUT = 6 A Resistive Load Input Rise Time < 0.1 µs T j = 25 o C 20 µs Fall Time Of Output Current I OUT = 6 A Resistive Load Input Rise Time < 0.1 µs T j = 25 o C 10 µs (di/dt) on Turn-on Current Slope I OUT = 6 A I OUT = IOV 25 ≤ T j ≤ 140 o C 0.5 2 A/µs A/µs (di/dt) off Turn-off Current Slope I OUT = 6 A I OUT = IOV 25 ≤ T j ≤ 140 o C 2 4 A/µs A/µs V demag Inductive Load Clamp Voltage I OUT = 6 A L = 1 mH tr t d(off) tf Min. Typ. -7 -4 -2 V Min. Typ. Max. Unit 0.8 V (*) V LOGIC INPUT Symbol Parameter V IL Input Low Level Voltage VIH Input High Level Voltage V I(hyst.) Input Hysteresis Voltage I IN V ICL Test Conditions 2 0.5 Input Current V IN = 5 V Input Clamp Voltage I IN = 10 mA I IN = -10 mA V 50 6 -0.7 µA V V 3/10 VN05H ELECTRICAL CHARACTERISTICS (Continued) PROTECTION AND DIAGNOSTICS Symbol V STAT (•) V USD V SCL (•) I OV Parameter Status Voltage Output Low Test Conditions Min. Typ. I STAT = 1.6 mA Under Voltage Shut Down Status Clamp Voltage I STAT = 10 mA I STAT = -10 mA Over Current R LOAD < 10 mΩ R LOAD < 10 mΩ Max. Unit 0.4 v 5.5 V 6 -0.7 V V 20 o T c = 85 C 1.4 A I AV Average Current in Short Circuit A I OL Open Load Current Level 5 T TSD Termal Shut-Down Temperature 140 o C TR Reset Temperature 125 o C 180 mA (*) The VIH is internally clamped at 6V about. it is possible to connect thispin to an higher voltage via an external resistor calculated to not exceed 10 mA at the input pin. (•) Status determinaion > 100 µs after the switching edge. Note 1: Above VCC = 36V the output voltage is clamped to 36V. Power dissipation increases and the device turns off it junction temperature reaches thermal shutdown temperature. FUNCTIONAL DESCRIPTION The device has a diagnostic output which indicates open circuit (no load) and over temperature conditions. The output signals are processed by internal logic. To protect the device against short circuit and over-current condition the thermal protection turns the integrated Power MOS off at a minimum junction temperature of 140 oC. When the temperature returns to about 125 oC the switch is automatically turned on again. To ensur the protection in all VCC conditions and in all the junction temperature range it is necessary to limit the voltage drop across Drain and Source (pin 3 and 5) at 29 V. The device is able to withstand a load dump according the test pulse 5 at level III of the ISO TR/1 7631. Above VCC = 36V the output voltage is clamped to 36V. Power dissipation increases and the device turns off if junction temperature reaches thermal shutdown temperature. PROTECTING THE DEVICE AGAINST REVERSE BATTERY The simplest way to protect the device against a continuous reverse battery voltage (-26V) is to 4/10 insert a Schottky diode between pin 1 (GND) and ground, as shown in the typical application circuit (fig. 3). The consequences of the voltage drop across this diode are as follows: - If the input is pulled to power GND, a negative voltage of -VF is seen by the device. (VIL, VIH thresholds and VSTAT are increased by VF with respect to power GND). - The undervoltage shutdown level is increased by VF. If there is no need for the control unit to handle external analog signals referred to the power GND, the best approach is to connect the reference potential of the control unit to node [1] (see application circuit infig. 4), which becomes the common signal GND for the whole control board. In this way no shift of VIH, VIL and VSTAT takes place and no negative voltage appears on the INPUT pin; this solution allows the use of a standard diode, with a breakdown voltage able to handle any ISO normalized negative pulses that occours in the automotive environment. VN05H TRUTH TABLE INPUT OUTPUT DIAGNOSTIC Normal Operation L H L H H H Open Circuit (No Load) L H L H H L Over-temperature L H L L H L Under-voltage X X L L H H Figure 1: Waveforms Figure 2: Over Current Test Circuit 5/10 VN05H Figure 3: Typical Application Circuit With A Schottky Diode For Reverse Supply Protection Figure 4: Typical Application Circuit With Separate Signal Ground 6/10 VN05H PENTAWATT (VERTICAL) MECHANICAL DATA DIM. A C D D1 E F F1 G G1 H2 H3 L L1 L2 L3 L5 L6 L7 M M1 Dia MIN. 2.4 1.2 0.35 0.8 1 3.2 6.6 mm TYP. 3.4 6.8 10.05 MAX. 4.8 1.37 2.8 1.35 0.55 1.05 1.4 3.6 7 10.4 10.4 MIN. inch TYP. 0.094 0.047 0.014 0.031 0.039 0.126 0.260 0.134 0.268 0.396 17.85 15.75 21.4 22.5 2.6 15.1 6 0.703 0.620 0.843 0.886 3 15.8 6.6 0.102 0.594 0.236 4.5 4 3.65 MAX. 0.189 0.054 0.110 0.053 0.022 0.041 0.055 0.142 0.276 0.409 0.409 0.118 0.622 0.260 0.177 0.157 3.85 0.144 0.152 P010E 7/10 VN05H PENTAWATT (HORIZONTAL) MECHANICAL DATA DIM. mm MIN. TYP. inch MAX. MIN. TYP. MAX. A 4.8 0.189 C 1.37 0.054 D 2.4 2.8 0.094 0.110 D1 1.2 1.35 0.047 0.053 E 0.35 0.55 0.014 0.022 0.041 F 0.8 1.05 0.031 F1 1 1.4 0.039 G 3.2 3.4 3.6 0.126 0.134 0.142 G1 6.6 6.8 7 0.260 0.268 0.276 H2 10.4 H3 10.05 0.055 0.409 10.4 0.396 0.409 0.559 0.590 L 14.2 15 L1 5.7 6.2 0244 L2 14.6 15.2 0.598 L3 3.5 4.1 0.137 0.161 L5 2.6 3 0.102 0.118 L6 15.1 15.8 0.594 0.622 L7 6 6.6 0.236 0.260 Dia 3.65 3.85 0.144 0.152 P010F 8/10 VN05H PENTAWATT (IN-LINE) MECHANICAL DATA mm DIM. MIN TYP inch MAX MIN TYP MAX A 4.8 0.189 C 1.37 0.054 D 2.4 2.8 0.094 0.110 D1 1.2 1.35 0.047 0.053 E 0.35 0.55 0.014 0.022 F 0.8 1.05 0.031 0.041 F1 1 1.4 0.039 G 3.2 3.4 3.6 0.126 0.134 0.142 G1 6.6 6.8 7 0.260 0.268 0.276 H2 0.055 10.4 0.409 H3 10.05 10.4 0.396 L2 23.05 23.4 23.8 0.907 0.921 0.937 0.409 L3 25.3 25.65 26.1 0.996 1.010 1.028 L5 2.6 3 0.102 0.118 L6 15.1 15.8 0.594 0.622 L7 6 6.6 0.236 0.260 Diam. 3.65 3.85 0.144 0.152 P010D 9/10 VN05H Information furnished is believed to be accurate and reliable. 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